Gate drive circuit for a semiconductor switch
    7.
    发明授权
    Gate drive circuit for a semiconductor switch 有权
    半导体开关的栅极驱动电路

    公开(公告)号:US09590621B2

    公开(公告)日:2017-03-07

    申请号:US14777163

    申请日:2014-03-14

    申请人: Eisergy Limited

    发明人: George Young

    摘要: The present application is directed to drive arrangement for semiconductor switches and in particular to a method of driving the gate of a switch with pulses corresponding to turn-on and turn-off commands through separate turn-on and turn-off transformers. The application provides a fail safe reset feature, a more efficient turn-on circuit and an energy recovery circuit for recovering energy from the gate upon turn-off. The application also provides a novel arrangement for assembling multiple pulse transformers on a circuit board.

    摘要翻译: 本申请涉及用于半导体开关的驱动装置,特别涉及通过分开的导通和断开变压器驱动对应于导通和断开命令的脉冲的开关的栅极的方法。 该应用提供故障安全复位功能,更有效的接通电路和用于在关断时从门恢复能量的能量恢复电路。 该应用还提供了一种用于在电路板上组装多个脉冲变压器的新颖设计。