摘要:
Synthetically produced substantially pure biologically active compounds having the general formula ##STR1## wherein R.sub.1 is C.sub.1 -C.sub.20 alkyl, alkenyl, aryl, aralkyl, cycloalkyl, alkylcycloalkyl, cycloalkylalkyl, cycloalkenyl, alkylcycloalkenyl, or cycloalkenylalkyl;R.sub.2 is hydrogen, C.sub.1 -C.sub.10 alkyl or an amide-substituted alkyl having up to 10 carbon atoms;R.sub.3 is a cyclic, straight or branched chain hydrocarbon group having 2-12 carbon atoms, particularly --(CH.sub.2).sub.n --, wherein n is 2-12; orR.sub.2 and R.sub.3 are linked together to form an alkylene chain; andR.sub.4 is selected from ##STR2## (substituted or unsubstituted carbamimidoyl), ##STR3## (dimethylpyrimidyl), or ##STR4## (carbamyl) wherein each of R.sub.5, R.sub.6, and R.sub.7 is hydrogen or the same or different C.sub.1 -C.sub.8 alkyl group. The compounds are useful as bactericides for a wide variety of bacteria, including S.pyogenes, B.subtilis, K.pneumoniae, M.avium, B.fragilis, C.perfringens and C.albicans.
摘要:
A multilayer, III-V semiconductive structure can be disordered and shifted up in energy gap into a single crystalline form by a Zinc diffusion. More specifically, all or selected portions of a multilayer of either gallium arsenide/aluminum arsenide or gallium arsenide/aluminum gallium arsenide can be converted into single crystal aluminum gallium arsenide having a higher energy gap than that of the original structure by the process of a Zinc diffusion at low temperature. Other active devices can then be constructed in the higher energy gap material using established semiconductor processing steps.
摘要:
Advantageous operation can be achieved in a semiconductor heterostructure light emitting device by utilizing a single thin active layer which exhibits quantum size effects. It has been found that performance can be degraded by employing a single quantum layer that is thinner than a certain minimum thickness, this minimum thickness being about 100 Angstroms, (the approximate carrier scattering path length). In one form of the invention, there is provided a semiconductor heterostructure device which includes first and second relatively wide bandgap semiconductor regions of opposite conductivity types. A single quantum well active layer is disposed between the first and second regions. The active layer is formed of a relatively narrow bandgap semiconductor having a thickness which is in the range of about 100 to 400 Angstroms, and is preferably about 200 Angstroms. One preferred combination of materials for the device comprises aluminum gallium arsenide for the relatively wide bandgap semiconductor regions, and gallium arsenide for the single active layer. However, other combinations of materials may be suitable, for example: indium phosphide for the relatively wide bandgap regions and indium gallium phosphide arsenide for the single active layer; or indium gallium arsenide phosphide for the relatively wide bandgap regions and gallium arsenide phosphide for the single active layer; or aluminum gallium arsenide phosphide for the confining layer and gallium arsenide phosphide for the active layer. The latter two are particularly useful as emitters in the visible portion of the spectrum. In a further form of the invention, there is disclosed a semiconductor heterostructure device wherein the active region comprises one or more quantum layers of an indirect bandgap semiconductor material, preferably germanium.
摘要:
A semiconducting internal boundary layer ceramic composition having a fine grain structure suitable for use in thin-layer multilayer capacitors is made in one step by firing a mixture comprising a major amount of finely divided strontium titanate, a minor amount of a compound containing either strontium or titanium, or an element functionally equivalent thereto, a minor amount of a semiconductor forming ingredient (dopant), the identity of which depends on whether the mixture is rich in strontium or in titanium, and a minor amount of a counterdopant selected from cuprous oxide or silver oxide. When the mixture is rich in titanium, the chemical doping agent used to produce semiconductivity is an oxide of a trivalent metal selected from bismuth, boron, iron, antimony, lanthanum and the rare earth and transition metals. When the mixture is rich in strontium, the dopant is an oxide of a pentavalent or hexavalent metal selected from tungsten (+6), niobium (+5), tantalum (+5), and molybdenum (+6).
摘要:
In accordance with the finding of undesired, non-uniform, heterojunction layers in heterojunction light emitters, it has been determined that completely uniform layers can be grown by growing individual super thin layers (i.e., .ltoreq.200 A) of uniform composition and stacking as many of these layers as desired into a uniform "thick" (.about.0.1.mu.) layer. This growth is accomplished by employing an LPE system wherein the substrate and melt are brought into contact for only the period of time during which the constituents of the melt deposit on the substrate in proper ratios. Steady-state diffusion-limited growth is avoided. The substrate is then removed from the melt, the melt allowed to re-equilibrate, and the process repeated as many times as desired.
摘要:
An improved polycrystalline semiconducting ceramic composition comprises an alkaline earth metal titanate doped with a hexavalent metal oxide such as (MO.sub.3)(Bi.sub.2 O.sub.3).sub.x where M is tungsten or molybdenum, and x ranges from 0 to 7, which is liquid phase sintered with lead germanate to produce internal insulating boundaries. The composition is fine grained and provides thin-layer, multi-layer capacitors that exhibit high dielectric constant values, low dissipation factors, and low temperature and voltage coefficients of capacitance.
摘要翻译:改进的多晶半导体陶瓷组合物包含掺杂有六价金属氧化物的碱土金属钛酸盐,例如(MO 3)(Bi 2 O 3)x,其中M是钨或钼,x为0至7,其为与锗酸铅 以产生内部绝缘边界。 该组合物是细粒度的,并且提供表现出高介电常数值,低耗散因数以及电容的低温和电压系数的薄层多层电容器。
摘要:
A rapid, automated method for the determination of organic halogens is provided by an analytical system comprising a burner and combustion chamber for burning the organic halogen-containing sample in an oxygen-hydrogen flame; an absorption zone wherein the combustion gases are absorbed in a moving reagent film; and a colorimeter and recorder. With proper choice of reagent film, either total halogen (Cl, Br, I) content or specifically bromine content can be assayed automatically. The system is particularly useful for analysis of biological samples.
摘要:
A process for treating wastewaters to reduce the ammonia content thereof comprising the steps of:A. contacting wastewater, having a dissolved ammonia content, with an ion exchanger having an affinity for ammonium ions whereby ammonium ions become sorbed onto said ion exchanger;B. separating said ion exchanger containing sorbed ammonium ions from the wastewater and then regenerating said ion exchanger and converting the ammonium ions thereon to nitrate ions by treating the ion exchanger with a concentrated salt solution and a culture of nitrifying bacteria whereby ions from the salt solution become absorbed onto the ion exchanger while ammonium ions on the ion exchanger are displaced into solution and oxidized by the nitrifying bacteria to nitrate ions; and,C. recycling the regenerated ion exchanger for further contact with wastewater.
摘要:
An alcoholic extract of the plant Jacaranda caucana (Bignoniaceae) provides in vivo anti-tumor activity against the P-388 lymphocytic leukemia system. Fractionation of the extract by solvent extraction and chromatography afforded the active principle, a novel phytoquinoid derivative named jacaranone.
摘要:
New biologically active compounds derived by acylation and/or oxidative degradation of streptovaricin ansamycin materials, pharmaceutical compositions and therapeutic methods involving the same.