Acyl and carbamimidoyl alkanediamines
    1.
    发明授权
    Acyl and carbamimidoyl alkanediamines 失效
    酰基和氨基甲脒基烷二胺

    公开(公告)号:US4762949A

    公开(公告)日:1988-08-09

    申请号:US460287

    申请日:1983-01-24

    CPC分类号: C07C279/12 C07D239/42

    摘要: Synthetically produced substantially pure biologically active compounds having the general formula ##STR1## wherein R.sub.1 is C.sub.1 -C.sub.20 alkyl, alkenyl, aryl, aralkyl, cycloalkyl, alkylcycloalkyl, cycloalkylalkyl, cycloalkenyl, alkylcycloalkenyl, or cycloalkenylalkyl;R.sub.2 is hydrogen, C.sub.1 -C.sub.10 alkyl or an amide-substituted alkyl having up to 10 carbon atoms;R.sub.3 is a cyclic, straight or branched chain hydrocarbon group having 2-12 carbon atoms, particularly --(CH.sub.2).sub.n --, wherein n is 2-12; orR.sub.2 and R.sub.3 are linked together to form an alkylene chain; andR.sub.4 is selected from ##STR2## (substituted or unsubstituted carbamimidoyl), ##STR3## (dimethylpyrimidyl), or ##STR4## (carbamyl) wherein each of R.sub.5, R.sub.6, and R.sub.7 is hydrogen or the same or different C.sub.1 -C.sub.8 alkyl group. The compounds are useful as bactericides for a wide variety of bacteria, including S.pyogenes, B.subtilis, K.pneumoniae, M.avium, B.fragilis, C.perfringens and C.albicans.

    摘要翻译: 合成生产的基本上纯的具有通式“IMAGE”的生物活性化合物,其中R 1是C 1 -C 20烷基,烯基,芳基,芳烷基,环烷基,烷基环烷基,环烷基烷基,环烯基,烷基环烯基或环烯基烷基; R2是氢,C1-C10烷基或具有至多10个碳原子的酰胺取代的烷基; R3是具有2-12个碳原子的环状,直链或支链烃基,特别是 - (CH 2)n - ,其中n是2-12; 或R 2和R 3连接在一起形成亚烷基链; 并且R 4选自下式(取代或未取代的氨甲脒基),(IMAGE)(二甲基嘧啶基)或者(甲酰基甲酰基),其中R 5,R 6和R 7各自为氢或相同或不同的C 1 -C 8烷基 。 这些化合物可用作多种细菌的杀菌剂,包括粟酒酵母菌,枯草芽孢杆菌,肺炎支原体,。ium属,裂殖酵母属,C.perfringens和C.albicans。

    Method for producing integrated semiconductor light emitter
    2.
    发明授权
    Method for producing integrated semiconductor light emitter 失效
    集成半导体发光体的制造方法

    公开(公告)号:US4378255A

    公开(公告)日:1983-03-29

    申请号:US260956

    申请日:1981-05-06

    摘要: A multilayer, III-V semiconductive structure can be disordered and shifted up in energy gap into a single crystalline form by a Zinc diffusion. More specifically, all or selected portions of a multilayer of either gallium arsenide/aluminum arsenide or gallium arsenide/aluminum gallium arsenide can be converted into single crystal aluminum gallium arsenide having a higher energy gap than that of the original structure by the process of a Zinc diffusion at low temperature. Other active devices can then be constructed in the higher energy gap material using established semiconductor processing steps.

    摘要翻译: 多层III-V半导体结构可以无序化,并通过锌扩散在能量间隙中向上移位成单晶形式。 更具体地,砷化镓/砷化砷砷或砷化镓/砷化镓砷化镓的多层的全部或选定部分可通过锌的方法转化为具有比原始结构更高的能隙的单晶砷化镓镓 在低温下扩散。 然后可以使用已建立的半导体处理步骤在更高能隙材料中构建其它有源器件。

    Semiconductor light emitting device with quantum well active region of
indirect bandgap semiconductor material
    3.
    发明授权
    Semiconductor light emitting device with quantum well active region of indirect bandgap semiconductor material 失效
    具有间隙带隙半导体材料的量子阱有源区的半导体发光器件

    公开(公告)号:US4365260A

    公开(公告)日:1982-12-21

    申请号:US214894

    申请日:1980-12-08

    IPC分类号: H01L33/00 H01S5/343

    摘要: Advantageous operation can be achieved in a semiconductor heterostructure light emitting device by utilizing a single thin active layer which exhibits quantum size effects. It has been found that performance can be degraded by employing a single quantum layer that is thinner than a certain minimum thickness, this minimum thickness being about 100 Angstroms, (the approximate carrier scattering path length). In one form of the invention, there is provided a semiconductor heterostructure device which includes first and second relatively wide bandgap semiconductor regions of opposite conductivity types. A single quantum well active layer is disposed between the first and second regions. The active layer is formed of a relatively narrow bandgap semiconductor having a thickness which is in the range of about 100 to 400 Angstroms, and is preferably about 200 Angstroms. One preferred combination of materials for the device comprises aluminum gallium arsenide for the relatively wide bandgap semiconductor regions, and gallium arsenide for the single active layer. However, other combinations of materials may be suitable, for example: indium phosphide for the relatively wide bandgap regions and indium gallium phosphide arsenide for the single active layer; or indium gallium arsenide phosphide for the relatively wide bandgap regions and gallium arsenide phosphide for the single active layer; or aluminum gallium arsenide phosphide for the confining layer and gallium arsenide phosphide for the active layer. The latter two are particularly useful as emitters in the visible portion of the spectrum. In a further form of the invention, there is disclosed a semiconductor heterostructure device wherein the active region comprises one or more quantum layers of an indirect bandgap semiconductor material, preferably germanium.

    摘要翻译: 通过利用显示量子尺寸效应的单个薄的有源层,可以在半导体异质结构发光器件中实现有利的操作。 已经发现,通过采用比特定最小厚度更薄的单个量子层(最小厚度为约100埃)(近似载流子散射路径长度),可以降低性能。 在本发明的一种形式中,提供了一种半导体异质结构器件,其包括具有相反导电类型的第一和第二相对较宽的带隙半导体区域。 单个量子阱活性层设置在第一和第二区域之间。 有源层由具有约100至400埃范围内的厚度的较窄带隙半导体形成,优选为约200埃。 用于器件的材料的一种优选组合包括用于相对宽的带隙半导体区域的砷化镓镓,以及用于单一有源层的砷化镓。 然而,材料的其它组合可能是合适的,例如:用于相对宽的带隙区域的磷化铟和用于单一有源层的磷酸铟镓砷化物; 或砷化铟镓磷化物用于相对宽的带隙区域和用于单一活性层的磷化镓磷化物; 或用于限制层的砷化镓镓磷化物和用于活性层的砷化镓磷化物。 后两者在光谱的可见部分中特别有用。 在本发明的另一形式中,公开了半导体异质结构器件,其中有源区包括一个或多个间接带隙半导体材料的量子层,优选锗。

    Fine-grain semiconducting ceramic compositions
    4.
    发明授权
    Fine-grain semiconducting ceramic compositions 失效
    细晶半导体陶瓷组合物

    公开(公告)号:US4347167A

    公开(公告)日:1982-08-31

    申请号:US192693

    申请日:1980-10-01

    CPC分类号: C04B35/47 H01G4/1281

    摘要: A semiconducting internal boundary layer ceramic composition having a fine grain structure suitable for use in thin-layer multilayer capacitors is made in one step by firing a mixture comprising a major amount of finely divided strontium titanate, a minor amount of a compound containing either strontium or titanium, or an element functionally equivalent thereto, a minor amount of a semiconductor forming ingredient (dopant), the identity of which depends on whether the mixture is rich in strontium or in titanium, and a minor amount of a counterdopant selected from cuprous oxide or silver oxide. When the mixture is rich in titanium, the chemical doping agent used to produce semiconductivity is an oxide of a trivalent metal selected from bismuth, boron, iron, antimony, lanthanum and the rare earth and transition metals. When the mixture is rich in strontium, the dopant is an oxide of a pentavalent or hexavalent metal selected from tungsten (+6), niobium (+5), tantalum (+5), and molybdenum (+6).

    摘要翻译: 通过烧结含有主要量的细碎钛酸锶,少量含锶或锶的化合物的混合物,制备具有适用于薄层多层电容器的细晶粒结构的半导体内部边界层陶瓷组合物 钛或其功能等同的元素,少量的半导体形成成分(掺杂剂),其特性取决于混合物是富含锶还是钛,少量的反掺杂剂选自氧化亚铜或 氧化银。 当混合物富含钛时,用于制备半导体性的化学掺杂剂是选自铋,硼,铁,锑,镧以及稀土和过渡金属的三价金属的氧化物。 当混合物富含锶时,掺杂剂是选自钨(+6),铌(+5),钽(+5)和钼(+6)的五价或六价金属的氧化物。

    Homogeneous liquid phase epitaxial growth of heterojunction materials
    5.
    发明授权
    Homogeneous liquid phase epitaxial growth of heterojunction materials 失效
    异质结材料的均相液相外延生长

    公开(公告)号:US4319937A

    公开(公告)日:1982-03-16

    申请号:US206324

    申请日:1980-11-12

    IPC分类号: H01L21/208 H01L33/00

    摘要: In accordance with the finding of undesired, non-uniform, heterojunction layers in heterojunction light emitters, it has been determined that completely uniform layers can be grown by growing individual super thin layers (i.e., .ltoreq.200 A) of uniform composition and stacking as many of these layers as desired into a uniform "thick" (.about.0.1.mu.) layer. This growth is accomplished by employing an LPE system wherein the substrate and melt are brought into contact for only the period of time during which the constituents of the melt deposit on the substrate in proper ratios. Steady-state diffusion-limited growth is avoided. The substrate is then removed from the melt, the melt allowed to re-equilibrate, and the process repeated as many times as desired.

    摘要翻译: 根据在异质结发光体中发现不期望的,非均匀的异质结层,已经确定通过生长均匀组成和层叠的单个超薄层(即,= 200A)可以生长完全均匀的层 根据需要将这些层中的许多层分成均匀的“厚”(DIFFERENCE0.1μm)层。 该生长通过使用LPE系统来实现,其中使衬底和熔体仅在熔融物成分以适当的比率沉积在衬底上的时间段内接触。 避免了稳态扩散受限生长。 然后将基材从熔体中除去,使熔体重新平衡,并且该过程根据需要重复多次。

    Method of producing internal boundary layer ceramic compositions
    6.
    发明授权
    Method of producing internal boundary layer ceramic compositions 失效
    生产内部边界层陶瓷组合物的方法

    公开(公告)号:US4237084A

    公开(公告)日:1980-12-02

    申请号:US23708

    申请日:1979-03-26

    摘要: An improved polycrystalline semiconducting ceramic composition comprises an alkaline earth metal titanate doped with a hexavalent metal oxide such as (MO.sub.3)(Bi.sub.2 O.sub.3).sub.x where M is tungsten or molybdenum, and x ranges from 0 to 7, which is liquid phase sintered with lead germanate to produce internal insulating boundaries. The composition is fine grained and provides thin-layer, multi-layer capacitors that exhibit high dielectric constant values, low dissipation factors, and low temperature and voltage coefficients of capacitance.

    摘要翻译: 改进的多晶半导体陶瓷组合物包含掺杂有六价金属氧化物的碱土金属钛酸盐,例如(MO 3)(Bi 2 O 3)x,其中M是钨或钼,x为0至7,其为与锗酸铅 以产生内部绝缘边界。 该组合物是细粒度的,并且提供表现出高介电常数值,低耗散因数以及电容的低温和电压系数的薄层多层电容器。

    Instrument for the automated determination of organic halogens
    7.
    发明授权
    Instrument for the automated determination of organic halogens 失效
    用于自动测定有机卤素的仪器

    公开(公告)号:US4160802A

    公开(公告)日:1979-07-10

    申请号:US880372

    申请日:1978-02-23

    摘要: A rapid, automated method for the determination of organic halogens is provided by an analytical system comprising a burner and combustion chamber for burning the organic halogen-containing sample in an oxygen-hydrogen flame; an absorption zone wherein the combustion gases are absorbed in a moving reagent film; and a colorimeter and recorder. With proper choice of reagent film, either total halogen (Cl, Br, I) content or specifically bromine content can be assayed automatically. The system is particularly useful for analysis of biological samples.

    摘要翻译: 用于测定有机卤素的快速,自动化的方法由包括用于在氧 - 氢火焰中燃烧含有有机含卤素样品的燃烧器和燃烧室的分析系统提供; 吸收区,其中燃烧气体被吸收在移动的试剂膜中; 和色度计和记录仪。 通过适当选择试剂膜,可以自动测定总卤素(Cl,Br,I)含量或特定溴含量。 该系统对生物样品的分析特别有用。

    Water purification process
    8.
    发明授权
    Water purification process 失效
    净水过程

    公开(公告)号:US4098690A

    公开(公告)日:1978-07-04

    申请号:US671328

    申请日:1976-03-29

    摘要: A process for treating wastewaters to reduce the ammonia content thereof comprising the steps of:A. contacting wastewater, having a dissolved ammonia content, with an ion exchanger having an affinity for ammonium ions whereby ammonium ions become sorbed onto said ion exchanger;B. separating said ion exchanger containing sorbed ammonium ions from the wastewater and then regenerating said ion exchanger and converting the ammonium ions thereon to nitrate ions by treating the ion exchanger with a concentrated salt solution and a culture of nitrifying bacteria whereby ions from the salt solution become absorbed onto the ion exchanger while ammonium ions on the ion exchanger are displaced into solution and oxidized by the nitrifying bacteria to nitrate ions; and,C. recycling the regenerated ion exchanger for further contact with wastewater.

    摘要翻译: 一种处理废水以减少氨含量的方法,包括以下步骤: