公开(公告)号：US20050031786A1

公开(公告)日：2005-02-10

申请号：US10649351

申请日：2003-08-26

Applicant: Sang-Hyeob Lee ,  Karl Levy ,  Aaron Fellis ,  Panya Wongsenakhum ,  Juwen Gao ,  Joshua Collins ,  Kaihan Ashtiani ,  Junghwan Sung ,  Lana Chan

Inventor： Sang-Hyeob Lee ,  Karl Levy ,  Aaron Fellis ,  Panya Wongsenakhum ,  Juwen Gao ,  Joshua Collins ,  Kaihan Ashtiani ,  Junghwan Sung ,  Lana Chan

IPC: H01L21/283 ,  H01L21/285 ,  H01L21/768 ,  C23C16/00

CPC classification number: H01L21/28562 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877 ,  Y10S438/902

Abstract: A tungsten nucleation film is formed on a surface of a semiconductor substrate by alternatively providing to that surface, reducing gases and tungsten-containing gases. Each cycle of the method provides for one or more monolayers of the tungsten film. The film is conformal and has improved step coverage, even for a high aspect ratio contact hole.

Abstract translation: 通过交替地向该表面提供还原气体和含钨气体，在半导体衬底的表面上形成钨成核膜。 该方法的每个循环提供了一个或多个钨膜的单层。 该膜是保形的，并且具有改进的台阶覆盖率，即使是高纵横比接触孔。

公开(公告)号：US20110221044A1

公开(公告)日：2011-09-15

申请号：US12723532

申请日：2010-03-12

Applicant: Michal Danek ,  Tom Mountsier ,  Jonathan Reid ,  Juwen Gao ,  Aaron Fellis

Inventor： Michal Danek ,  Tom Mountsier ,  Jonathan Reid ,  Juwen Gao ,  Aaron Fellis

IPC: H01L23/48 ,  H01L21/768

CPC classification number: H01L21/76898 ,  H01L21/2885 ,  H01L21/76846 ,  H01L21/76873 ,  H01L21/76876 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Apparatus and methods for filling through silicon vias (TSV's) with copper having an intervening tungsten layer between the copper plug and the silicon are disclosed. Methods are useful for Damascene processing, with or without a TSV feature. The tungsten layer serves as a diffusion barrier, a seed layer for copper electrofill and a means of reducing CTE-induced stresses between copper and silicon. Adhesion of the tungsten layer to the silicon and of the copper layer to the tungsten is described.

Abstract translation: 公开了用于在铜插塞和硅之间具有插入钨层的铜填充硅通孔（TSV）的装置和方法。 方法对于具有或不具有TSV特征的镶嵌处理是有用的。 钨层用作扩散阻挡层，用于铜电解填料的种子层和减少铜和硅之间CTE引起的应力的手段。 描述了钨层对硅和铜层与钨的粘附。

公开(公告)号：US08709948B2

公开(公告)日：2014-04-29

申请号：US12723532

申请日：2010-03-12

Applicant: Michal Danek ,  Tom Mountsier ,  Jonathan Reid ,  Juwen Gao ,  Aaron Fellis

Inventor： Michal Danek ,  Tom Mountsier ,  Jonathan Reid ,  Juwen Gao ,  Aaron Fellis

IPC: H01L21/44

CPC classification number: H01L21/76898 ,  H01L21/2885 ,  H01L21/76846 ,  H01L21/76873 ,  H01L21/76876 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Apparatus and methods for filling through silicon vias (TSV's) with copper having an intervening tungsten layer between the copper plug and the silicon are disclosed. Methods are useful for Damascene processing, with or without a TSV feature. The tungsten layer serves as a diffusion barrier, a seed layer for copper electrofill and a means of reducing CTE-induced stresses between copper and silicon. Adhesion of the tungsten layer to the silicon and of the copper layer to the tungsten is described.

Abstract translation: 公开了用于在铜插塞和硅之间具有插入钨层的铜填充硅通孔（TSV）的装置和方法。 方法对于具有或不具有TSV特征的镶嵌处理是有用的。 钨层用作扩散阻挡层，用于铜电解填料的种子层和减少铜和硅之间CTE引起的应力的手段。 描述了钨层对硅和铜层与钨的粘附。