公开(公告)号：US20110006406A1

公开(公告)日：2011-01-13

申请号：US12831935

申请日：2010-07-07

申请人： Adam Michal Urbanowicz ,  Patrick Verdonck ,  Denis Shamiryan ,  Kris Vanstreels ,  Mikhail Baklanov ,  Stefan De Gendt

发明人： Adam Michal Urbanowicz ,  Patrick Verdonck ,  Denis Shamiryan ,  Kris Vanstreels ,  Mikhail Baklanov ,  Stefan De Gendt

IPC分类号： H01L29/06 ,  H01L21/31

CPC分类号： C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31633 ,  H01L21/7682 ,  H01L2221/1047

摘要： A method is provided for producing a porogen-residue-free ultra low-k film with porosity higher than 50% and a high elastic modulus above 5 GPa. The method starts with depositing a SiCOH film using Plasma Enhanced Chemical Vapor Deposition (PE-CVD) or Chemical Vapor Deposition (CVD) onto a substrate and then first Performing an atomic hydrogen treatment at elevated wafer temperature in the range of 200° C. up to 350° C. to remove all the porogens and then performing a UV assisted thermal curing step.

摘要翻译： 提供一种制备孔隙率高于50％和高于5GPa的高弹性模量的无致孔剂残留超低k膜的方法。 该方法开始于使用等离子体增强化学气相沉积（PE-CVD）或化学气相沉积（CVD）将SiCOH膜沉积到衬底上，然后首先在升高的晶片温度下在200℃范围内进行原子氢处理 至350℃以除去所有的致孔剂，然后进行UV辅助热固化步骤。

公开(公告)号：US20090068768A1

公开(公告)日：2009-03-12

申请号：US12204165

申请日：2008-09-04

申请人： Adam Michal Urbanowicz ,  Mikhail Baklanov

发明人： Adam Michal Urbanowicz ,  Mikhail Baklanov

IPC分类号： G01J3/30 ,  H01L21/66

CPC分类号： G01N21/631 ,  G01N21/71

摘要： A non-destructive and simple analytical method is provided which allows in situ monitoring of plasma damage during the plasma processing such as resist stripping. If a low-k film is damaged during plasma processing, one of the reaction products is water, which is remained adsorbed onto the low-k film (into pores), if the temperature is lower than 100-150 C. A plasma (e.g. He) that emits high energy EUV photons (E>20 eV) which is able to destruct water molecules forming electronically excited oxygen atoms is used to detect the adsorbed water. The excited oxygen is detected from optical emission at 777 nm. Therefore, the higher the adsorbed water concentration (higher damage), a more intensive (oxygen) signal is detected. Therefore, intensity of oxygen signal is a measure of plasma damage in the previous strip step. The proposed analytical method can be performed in-situ immediately after plasma processing and most preferred the optical emission of oxygen radicals is monitored during the de-chucking step in the plasma chamber.

摘要翻译： 提供了非破坏性和简单的分析方法，其允许在诸如抗蚀剂剥离的等离子体处理期间原位监测等离子体损伤。 如果在等离子体处理期间低k膜被损坏，则其中一个反应产物是水，如果温度低于100-150℃，其仍然被吸附到低k膜（到孔中）。等离子体（例如 He）发射能够破坏形成电子激发的氧原子的水分子的高能量EUV光子（E> 20eV）用于检测吸附的水。 从777nm的光发射检测到激发的氧。 因此，吸附水浓度越高（损伤越高），检测到更加密集（氧）信号。 因此，氧信号的强度是前一条带步骤中等离子体损伤的量度。 所提出的分析方法可以在等离子体处理之后立即进行，最优选的是在等离子体室中脱卡步骤期间监测氧自由基的光发射。

公开(公告)号：US08158523B2

公开(公告)日：2012-04-17

申请号：US12204165

申请日：2008-09-04

申请人： Adam Michal Urbanowicz ,  Mikhaïl Baklanov

发明人： Adam Michal Urbanowicz ,  Mikhaïl Baklanov

IPC分类号： H01L21/302

CPC分类号： G01N21/631 ,  G01N21/71

摘要： A non-destructive and simple analytical method is provided which allows in situ monitoring of plasma damage during the plasma processing such as resist stripping. If a low-k film is damaged during plasma processing, one of the reaction products is water, which is remained adsorbed onto the low-k film (into pores), if the temperature is lower than 100-150 C. A plasma (e.g. He) that emits high energy EUV photons (E>20 eV) which is able to destruct water molecules forming electronically excited oxygen atoms is used to detect the adsorbed water. The excited oxygen is detected from optical emission at 777 nm. Therefore, the higher the adsorbed water concentration (higher damage), a more intensive (oxygen) signal is detected. Therefore, intensity of oxygen signal is a measure of plasma damage in the previous strip step. The proposed analytical method can be performed in-situ immediately after plasma processing and most preferred the optical emission of oxygen radicals is monitored during the de-chucking step in the plasma chamber.

摘要翻译： 提供了非破坏性和简单的分析方法，其允许在诸如抗蚀剂剥离的等离子体处理期间原位监测等离子体损伤。 如果在等离子体处理期间低k膜被损坏，则其中一个反应产物是水，如果温度低于100-150℃，其仍然被吸附到低k膜（到孔中）。等离子体（例如 He）发射能够破坏形成电子激发的氧原子的水分子的高能量EUV光子（E> 20eV）用于检测吸附的水。 从777nm的光发射检测到激发的氧。 因此，吸附水浓度越高（损伤越高），检测到更加密集（氧）信号。 因此，氧信号的强度是前一条带步骤中等离子体损伤的量度。 所提出的分析方法可以在等离子体处理之后立即进行，最优选的是在等离子体室中脱卡步骤期间监测氧自由基的光发射。

公开(公告)号：US20090065025A1

公开(公告)日：2009-03-12

申请号：US12205596

申请日：2008-09-05

申请人： Adam Michal Urbanowicz ,  Mikhail Baklanov ,  Denis Shamiryan ,  Stefan De Gendt

发明人： Adam Michal Urbanowicz ,  Mikhail Baklanov ,  Denis Shamiryan ,  Stefan De Gendt

IPC分类号： B08B7/00

CPC分类号： C23C16/4405 ,  B08B7/0057

摘要： An improved reaction chamber cleaning process is provided for removing water residues that makes use of noble-gas plasma reactions. The method is easy applicable and may be combined with standard cleaning procedure. A noble-gas plasma (e.g. He) that emits high energy EUV photons (E>20 eV) which is able to destruct water molecules to form electronically excited oxygen atoms is used to remove the adsorbed water.

摘要翻译： 提供了一种改进的反应室清洁方法，用于除去利用惰性气体等离子体反应的水残余物。 该方法易于应用，可与标准清洗程序结合使用。 使用能够破坏水分子形成电子激发的氧原子的高能量EUV光子（E> 20eV）的稀有气体等离子体（例如He）去除吸附的水。

公开(公告)号：US07964039B2

公开(公告)日：2011-06-21

申请号：US12205596

申请日：2008-09-05

申请人： Adam Michal Urbanowicz ,  Mikhaïl Baklanov ,  Denis Shamiryan ,  Stefan De Gendt

发明人： Adam Michal Urbanowicz ,  Mikhaïl Baklanov ,  Denis Shamiryan ,  Stefan De Gendt

IPC分类号： B08B7/00 ,  B08B7/04 ,  B08B9/00

CPC分类号： C23C16/4405 ,  B08B7/0057

摘要： An improved reaction chamber cleaning process is provided for removing water residues that makes use of noble-gas plasma reactions. The method is easy applicable and may be combined with standard cleaning procedure. A noble-gas plasma (e.g. He) that emits high energy EUV photons (E>20 eV) which is able to destruct water molecules to form electronically excited oxygen atoms is used to remove the adsorbed water.

摘要翻译： 提供了一种改进的反应室清洁方法，用于除去利用惰性气体等离子体反应的水残余物。 该方法易于应用，可与标准清洗程序结合使用。 使用能够破坏水分子形成电子激发的氧原子的高能量EUV光子（E> 20eV）的稀有气体等离子体（例如He）去除吸附的水。