Reference voltage generation scheme for gate oxide protected circuits
    1.
    发明授权
    Reference voltage generation scheme for gate oxide protected circuits 失效
    栅极氧化物保护电路的参考电压产生方案

    公开(公告)号:US5923211A

    公开(公告)日:1999-07-13

    申请号:US861039

    申请日:1997-05-21

    CPC分类号: G05F1/46 G05F3/247 G05F3/30

    摘要: A reference voltage generation circuit is provided for use in gate oxide protected circuits for generating an NMOS reference voltage and PMOS reference voltage in which the NMOS reference voltage is independent of an I/O buffer power supply potential and in which the PMOS reference voltage tracks the supply voltage. The reference voltage generation circuit includes a bandgap voltage reference circuit, a first operational amplifier, a voltage divider and a second operational amplifier. In one embodiment, the NMOS reference voltage is approximately +2.2 volts and is referenced with respect to ground. The PMOS reference voltage is approximately +1.1 volts and referenced with respect to the I/O buffer power supply voltage and the NMOS reference voltage.

    摘要翻译: 提供参考电压产生电路用于栅极氧化物保护电路,用于产生NMOS参考电压和PMOS参考电压,其中NMOS参考电压独立于I / O缓冲器电源电位,并且其中PMOS参考电压跟踪 电源电压。 参考电压产生电路包括带隙电压参考电路,第一运算放大器,分压器和第二运算放大器。 在一个实施例中,NMOS参考电压大约为+2.2伏,并且相对于地面参考。 PMOS参考电压约为+1.1伏,并参考I / O缓冲器电源电压和NMOS参考电压。

    High speed low power content addressable memory
    2.
    发明授权
    High speed low power content addressable memory 有权
    高速低功耗内存可寻址存储器

    公开(公告)号:US06349049B1

    公开(公告)日:2002-02-19

    申请号:US09815227

    申请日:2001-03-22

    申请人: Albrecht Schoy

    发明人: Albrecht Schoy

    IPC分类号: G11C1500

    CPC分类号: G11C15/04 G11C15/00

    摘要: One or more boost circuits are included within each row of CAM cells to increase the charging rate of its match line during match conditions. The CAM cells in each row control corresponding match transistors connected in series between a supply voltage and a match line. The match transistors collectively form a NAND match circuit. A boost circuit connected between a supply voltage and ground potential is coupled to a midpoint of the NAND match transistor chain. During compare operations, if all CAM cells match, all match transistors turn on and pull the match line toward the supply voltage. As the voltage at the midpoint of the match line reaches a threshold voltage, the boost circuit provides an additional charging path to more quickly charge the match line. If any CAM cell mismatches, its match transistor turns off and isolates the match line from the supply voltage.

    摘要翻译: 在每一行CAM单元中包括一个或多个升压电路,以在匹配条件期间增加其匹配线的充电速率。 每行中的CAM单元控制串联连接在电源电压和匹配线之间的对应的匹配晶体管。 匹配晶体管共同形成NAND匹配电路。 连接在电源电压和接地电位之间的升压电路耦合到NAND匹配晶体管链的中点。 在比较操作期间,如果所有CAM单元匹配,则所有匹配晶体管导通,并将匹配线拉向电源电压。 当匹配线的中点处的电压达到阈值电压时,升压电路提供额外的充电路径以更快地对匹配线进行充电。 如果任何CAM单元不匹配,其匹配晶体管关闭并将匹配线与电源电压隔离。

    High speed gate oxide protected level shifter
    3.
    发明授权
    High speed gate oxide protected level shifter 失效
    高速栅极氧化物保护电平转换器

    公开(公告)号:US5969542A

    公开(公告)日:1999-10-19

    申请号:US861038

    申请日:1997-05-21

    摘要: An improved gate oxide protected level shifter is provided which has a higher speed of operation than is traditionally available. The level shifter includes a first capacitor coupled between a first output terminal and the input of an inverter and a second capacitor coupled between a first node and the output of the inverter. As a result, the speed of the transitions at the gates of the pair of cross-coupled P-channel MOS transistors is increased several times.

    摘要翻译: 提供了一种改进的栅氧化物保护电平转换器,其具有比传统可用的更高的操作速度。 电平移位器包括耦合在第一输出端子和反相器的输入端之间的第一电容器和耦合在第一节点和反相器的输出端之间的第二电容器。 结果,在一对交叉耦合的P沟道MOS晶体管的栅极处的转变速度增加了几倍。

    Automatic polarity switching output circuit
    4.
    发明授权
    Automatic polarity switching output circuit 失效
    自动极性开关输出电路

    公开(公告)号:US5481211A

    公开(公告)日:1996-01-02

    申请号:US181749

    申请日:1994-01-21

    IPC分类号: G01R19/14 H02H11/00

    CPC分类号: H02H11/002 G01R19/14

    摘要: A measurement circuit in the output circuit of a sensor detects the polarity of a source to which a load is connected. The detection of one of the two polarities establishes one of two states which is stored in a storing element and the correct one of two drivers is switched to the output terminals. This state is maintained for as long as there is no change to the polarity at the output terminals. If the terminals are interchanged, then the measurement circuit correctly restores the stored state, so that the correct driver is associated with the load in each case. If positive instead of negative switching sensors are required, there is no need to replace the equipment. When the voltage is turned on, the equipment is initialized, so that it is set in accordance with the new circumstances.

    摘要翻译: 传感器的输出电路中的测量电路检测负载连接的源的极性。 两个极性中的一个的检测建立存储在存储元件中的两个状态之一,并且将两个驱动器中的正确的一个切换到输出端。 只要输出端子的极性没有变化,就保持该状态。 如果端子互换,则测量电路正确恢复存储状态,以便在每种情况下正确的驱动器与负载相关联。 如果需要使用正负转换传感器,则无需更换设备。 当电压开启时,设备被初始化,以便根据新的情况进行设置。