公开(公告)号：US07271626B1

公开(公告)日：2007-09-18

申请号：US10974177

申请日：2004-10-27

申请人： Alexander Burinskiy ,  Nathanael Griesert ,  Arun Rao ,  William J. McIntyre ,  John Philip Parry

发明人： Alexander Burinskiy ,  Nathanael Griesert ,  Arun Rao ,  William J. McIntyre ,  John Philip Parry

IPC分类号： H03K3/00

CPC分类号： H02M3/07

摘要： A multi-stage transistor circuit is provided in which the multiple transistor stages are coupled in parallel and switched individually in sequence by a series arrangement of buffers. Each buffer drives the gate of a corresponding stage of the multi-stage transistor circuit with a gating signal that is delayed by each buffer. Optionally, the voltage of the gating signal can be varied. Each transistor stage may comprise one or more transistors in parallel. A switched capacitor DC/DC converter incorporating the multi-stage transistor circuit is provided in which parasitic ringing at the output is substantially reduced or eliminated. Additionally, the multi-stage transistor circuit is well suited for implementing an adaptive non-overlapping gating signal generator for complementarily driving a series arrangement of multi-stage transistors. An adaptive gating signal generator incorporating the multi-stage transistor circuit provides the minimum dead time between the gating signals that will ensure under all conditions that the multi-stage transistors will not be on at the same time.

摘要翻译： 提供了多级晶体管电路，其中多个晶体管级并联耦合并且通过缓冲器的串联排列依次单独切换。 每个缓冲器利用由每个缓冲器延迟的门控信号驱动多级晶体管电路的相应级的栅极。 可选地，可以改变门控信号的电压。 每个晶体管级可以并联包括一个或多个晶体管。 提供了一种结合了多级晶体管电路的开关电容器DC / DC转换器，其中输出端的寄生振铃显着减少或消除。 此外，多级晶体管电路非常适合于实现用于互补驱动多级晶体管的串联布置的自适应非重叠门控信号发生器。 结合了多级晶体管电路的自适应选通信号发生器提供门控信号之间的最小死区时间，这将确保在所有条件下多级晶体管不会同时导通。

公开(公告)号：US07030678B1

公开(公告)日：2006-04-18

申请号：US10776834

申请日：2004-02-11

申请人： Alexander Burinskiy ,  Vladislav Potanin ,  Elena Potanina

发明人： Alexander Burinskiy ,  Vladislav Potanin ,  Elena Potanina

IPC分类号： H03L5/00

CPC分类号： H03K19/01721 ,  H03K19/017518 ,  H03K19/017527

摘要： The speed of a level shifter, which translates a first voltage in a first power domain to a second voltage in a second power domain, is increased by utilizing a first bipolar transistor to assist a first MOS transistor in pulling down the voltage on a first output node, and a second bipolar transistor to assist a second MOS transistor in pulling down the voltage on a second output node.

摘要翻译： 通过利用第一双极晶体管来帮助第一MOS晶体管将第一输出端上的电压拉下来，将电平移位器的速度转换为第一功率域中的第一电压到第二功率域中的第二电压 节点和第二双极晶体管，以辅助第二MOS晶体管降低第二输出节点上的电压。

公开(公告)号：US08665668B2

公开(公告)日：2014-03-04

申请号：US13231159

申请日：2011-09-13

申请人： Vladislav Potanin ,  Alexander Burinskiy ,  Elena Potanina

发明人： Vladislav Potanin ,  Alexander Burinskiy ,  Elena Potanina

IPC分类号： G01S15/08

CPC分类号： G01S7/003 ,  G01S7/523 ,  G01S15/10

摘要： Technologies are generally described for an integrated circuit that is designed to serve as the basis of SONAR sensors that provide high sensitivity, low noise, low cost, and electronically adjustable gain in a small package may incorporate transducer drivers and signal sensing functions. Electronically programmable gain of the circuit may provide flexibility in system designs for gain management, and eliminate a need for manual gain adjustments in production. Power may be supplied to the sensor(s) over a power line of the circuit from a direct current source through a resistor. The same line may also be used for communicating with the sensor(s). Data from the microcontroller may be transmitted to the sensor(s) using an open-drain driver transistor and received through another transistor isolating the micro-controller's input from potentially high voltages present on the power line.

摘要翻译： 一般来说，为了提供高灵敏度，低噪声，低成本和小型封装的电子可调增益的SONAR传感器的基础而设计的集成电路技术通常被描述，可以包括换能器驱动器和信号感测功能。 电路的电子可编程增益可以为系统设计提供增益管理的灵活性，并且不需要生产中的手动增益调整。 可以通过电流通过电阻从直流电源向电路的电源线供电。 同一条线也可以用于与传感器通信。 来自微控制器的数据可以使用开漏驱动器晶体管传输到传感器，并通过将微控制器的输入与电力线上存在的潜在高电压隔离的另一晶体管接收。

公开(公告)号：US08446187B1

公开(公告)日：2013-05-21

申请号：US11941858

申请日：2007-11-16

申请人： Alexander Burinskiy

发明人： Alexander Burinskiy

IPC分类号： H03L7/00 ,  H03K3/02

CPC分类号： H03K17/22 ,  H03K5/2472

摘要： A power-on reset (POR) circuit is provided. The POR circuit includes a first current source, a second current source, and a current comparator. The first current source is arranged to provide a relatively supply-independent circuit. The second current source is arranged to provide a supply-dependent current. The current comparator is arranged to compare the relatively supply-independent circuit with the relatively supply-dependent current to provide a POR signal.

摘要翻译： 提供上电复位（POR）电路。 POR电路包括第一电流源，第二电流源和电流比较器。 第一电流源被布置成提供相对独立电路的电路。 第二电流源被设置成提供与电源相关的电流。 电流比较器被布置为将相对独立电路与相对电源相关的电流进行比较以提供POR信号。

公开(公告)号：US08331005B2

公开(公告)日：2012-12-11

申请号：US12766659

申请日：2010-04-23

申请人： Alexander Burinskiy ,  James Steven Brown

发明人： Alexander Burinskiy ,  James Steven Brown

IPC分类号： G02B26/08

CPC分类号： G09G3/02 ,  G02B26/101 ,  G09G3/025 ,  G09G2320/041

摘要： A method for providing feed forward compensation in a drive signal for a rapid resonant frequency change due to a rapid LASER intensity change upon a micro-electro-mechanical system (MEMS) mirror and/or a surrounding MEMS structure in a MEMS scanner causing a mirror temperature change is provided. The method includes determining an intensity factor for at least one laser beam projected onto the MEMS scanner and adjusting a drive frequency of the drive signal based on the intensity factor. The intensity could represent a single intensity factor for multiple laser beams projected onto the MEMS scanner. The method could also include delaying the adjustment of the drive frequency to allow the resonant frequency change to take affect in the MEMS scanner. Delaying the adjustment could include delaying delivery of the intensity factor such that the intensity factor is provided coincident with the resonant frequency change of the MEMS scanner.

摘要翻译： 一种用于在驱动信号中提供前馈补偿的方法，用于由于在微机电系统（MEMS）镜和/或MEMS扫描仪中的周围的MEMS结构导致镜子的快速激光强度变化而导致的快速谐振频率变化 提供温度变化。 该方法包括确定投影到MEMS扫描仪上的至少一个激光束的强度因子，并且基于强度因子调整驱动信号的驱动频率。 强度可以表示投射到MEMS扫描仪上的多个激光束的单一强度因子。 该方法还可以包括延迟驱动频率的调节，以允许谐振频率变化在MEMS扫描器中产生影响。 延迟调整可能包括延迟强度因子的传递，使得提供强度因子与MEMS扫描仪的谐振频率变化一致。

公开(公告)号：US20120069712A1

公开(公告)日：2012-03-22

申请号：US13231159

申请日：2011-09-13

申请人： Vladislav Potanin ,  Alexander Burinskiy ,  Elena Potanina

发明人： Vladislav Potanin ,  Alexander Burinskiy ,  Elena Potanina

IPC分类号： G01S15/08

CPC分类号： G01S7/003 ,  G01S7/523 ,  G01S15/10

摘要： Technologies are generally described for an integrated circuit that is designed to serve as the basis of SONAR sensors that provide high sensitivity, low noise, low cost, and electronically adjustable gain in a small package may incorporate transducer drivers and signal sensing functions. Electronically programmable gain of the circuit may provide flexibility in system designs for gain management, and eliminate a need for manual gain adjustments in production. Power may be supplied to the sensor(s) over a power line of the circuit from a direct current source through a resistor. The same line may also be used for communicating with the sensor(s). Data from the microcontroller may be transmitted to the sensor(s) using an open-drain driver transistor and received through another transistor isolating the micro-controller's input from potentially high voltages present on the power line.

摘要翻译： 一般来说，为了提供高灵敏度，低噪声，低成本和小型封装的电子可调增益的SONAR传感器的基础而设计的集成电路技术通常被描述，可以包括换能器驱动器和信号感测功能。 电路的电子可编程增益可以为系统设计提供增益管理的灵活性，并且不需要生产中的手动增益调整。 可以通过电流通过电阻从直流电源向电路的电源线供电。 同一条线也可以用于与传感器通信。 来自微控制器的数据可以使用开漏驱动器晶体管传输到传感器，并通过将微控制器的输入与电力线上存在的潜在高电压隔离的另一晶体管接收。

公开(公告)号：US20100321750A1

公开(公告)日：2010-12-23

申请号：US12766659

申请日：2010-04-23

申请人： Alexander Burinskiy ,  James Steven Brown

发明人： Alexander Burinskiy ,  James Steven Brown

IPC分类号： G02B26/10

CPC分类号： G09G3/02 ,  G02B26/101 ,  G09G3/025 ,  G09G2320/041

摘要： A method for providing feed forward compensation in a drive signal for a rapid resonant frequency change due to a rapid LASER intensity change upon a micro-electro-mechanical system (MEMS) mirror and/or a surrounding MEMS structure in a MEMS scanner causing a mirror temperature change is provided. The method includes determining an intensity factor for at least one laser beam projected onto the MEMS scanner and adjusting a drive frequency of the drive signal based on the intensity factor. The intensity could represent a single intensity factor for multiple laser beams projected onto the MEMS scanner. The method could also include delaying the adjustment of the drive frequency to allow the resonant frequency change to take affect in the MEMS scanner. Delaying the adjustment could include delaying delivery of the intensity factor such that the intensity factor is provided coincident with the resonant frequency change of the MEMS scanner.

摘要翻译： 一种用于在驱动信号中提供前馈补偿的方法，用于由于在微机电系统（MEMS）镜和/或MEMS扫描仪中的周围的MEMS结构导致镜子的快速激光强度变化而导致的快速谐振频率变化 提供温度变化。 该方法包括确定投影到MEMS扫描仪上的至少一个激光束的强度因子，并且基于强度因子调整驱动信号的驱动频率。 强度可以表示投射到MEMS扫描仪上的多个激光束的单一强度因子。 该方法还可以包括延迟驱动频率的调节，以允许谐振频率变化在MEMS扫描器中产生影响。 延迟调整可能包括延迟强度因子的传递，使得提供强度因子与MEMS扫描仪的谐振频率变化一致。

公开(公告)号：US07800127B1

公开(公告)日：2010-09-21

申请号：US11503593

申请日：2006-08-14

申请人： Vladislav Vashchenko ,  Alexander Burinskiy ,  Peter J. Hopper ,  Vladimir Kuznetsov

发明人： Vladislav Vashchenko ,  Alexander Burinskiy ,  Peter J. Hopper ,  Vladimir Kuznetsov

IPC分类号： H01L23/62

CPC分类号： H01L29/7436 ,  H01L27/0262 ,  H01L29/87

摘要： In an ESD device for fast switching applications based on a BSCR or NLDMOS-SCR, an anode junction control electrode is provided by not connecting the anode electrode to the collector of the BSCR or to the drain of the NLDMOS-SCR, and a cathode junction control electrode is provided by forming an additional n+ region in the BSCR or an additional p+ region in the p-well of the NLDMOS-SCR. The triggering voltage of the ESD device is adjusted after a time delay by controlling one or both of the control electrodes using an RC-timer-driver circuit.

摘要翻译： 在用于基于BSCR或NLDMOS-SCR的快速切换应用的ESD装置中，阳极结控制电极通过不将阳极电极连接到BSCR的集电极或NLDMOS-SCR的漏极而提供，并且阴极结 通过在BSCR中的附加n +区域或NLDMOS-SCR的p阱中的附加p +区域形成控制电极。 通过使用RC定时器驱动器电路控制一个或两个控制电极，在延迟之后调整ESD装置的触发电压。

公开(公告)号：US07671574B1

公开(公告)日：2010-03-02

申请号：US11755623

申请日：2007-05-30

申请人： Alexander Burinskiy ,  Frank De Stasi

发明人： Alexander Burinskiy ,  Frank De Stasi

IPC分类号： G05F1/00

CPC分类号： H02M3/1588 ,  Y02B70/1466

摘要： A buck DC to DC converter is arranged to more accurately regulate an output voltage by substantially eliminating a ground voltage error caused at least in part by parasitic resistance during low side conversion/regulation. During high side conduction of the high side switch, the converter employs the output voltage for error correction. And during low side conduction of the low side switch, the converter employs a sampled and held version of the output voltage for error correction which enables the converter to eliminate the ground voltage error caused by parasitic resistance.

摘要翻译： 降压DC-DC转换器被布置成通过基本上消除在低侧转换/调节期间至少部分地由寄生电阻引起的接地电压误差来更精确地调节输出电压。 在高侧开关的高侧导通期间，转换器采用输出电压进行纠错。 而在低侧开关的低侧导通期间，转换器采用采样保持型的输出电压进行纠错，使转换器能够消除由寄生电阻引起的接地电压误差。

公开(公告)号：US07015745B1

公开(公告)日：2006-03-21

申请号：US10782513

申请日：2004-02-18

申请人： Alexander Burinskiy ,  Luan Vu

发明人： Alexander Burinskiy ,  Luan Vu

IPC分类号： G05F1/10 ,  G05F3/02

CPC分类号： G05F3/262 ,  H03F1/52 ,  H03F1/523 ,  H03F3/2171 ,  H03F2200/249 ,  H03F2200/453 ,  H03F2200/456 ,  H03F2200/462 ,  H03F2200/474 ,  H03F2200/78

摘要： A circuit for regulating a sensed current in a power transistor is provided. The circuit is configured to sense if the drain current of the power transistor has reached a limit current Ilimit. A sense transistor is arranged in an m:1 current mirror relationship with the power transistor. Additionally, a current sink that is coupled to the drain of the sense current is also configured to sink a current approximately equal to Ilimit/m. Further, a comparison circuit is configured to compare the drain voltages of the power and sense transistors. Also, if the drain current of the power transistor is less than Ilimit, a current sink pulls down the drain of the sense transistor, so that the drain voltage of the sense transistor is less than the drain voltage of the power transistor. However, if the level of the drain current of the power transistor reaches Ilimit, then Vds of the sense transistor would reach Vds of the power transistor, and the comparator would trip. Additionally, two switches are arranged to be open when switching currents flowing through the power transistor and sense transistors are each substantially zero. By opening the switches when these switching currents are each substantially zero, a false output (trip) of the comparison circuit can be prevented.

摘要翻译： 提供了用于调节功率晶体管中感测电流的电路。 电路被配置为检测功率晶体管的漏极电流是否已经达到极限电流I _{极限。 感测晶体管与功率晶体管以m：1电流镜的关系布置。 另外，耦合到感测电流的漏极的电流吸收器也被配置为吸收大约等于I SUB极限/ m的电流。 此外，比较电路被配置为比较功率和感测晶体管的漏极电压。 此外，如果功率晶体管的漏极电流小于I ，则电流吸收器会将感测晶体管的漏极拉下来，使感测晶体管的漏极电压小于漏极电压 的功率晶体管。 然而，如果功率晶体管的漏极电流的电平达到I 极限，则检测晶体管的Vds将达到功率晶体管的Vds，并且比较器将跳变。 此外，当开关流过功率晶体管的电流和感测晶体管都基本上为零时，两个开关被布置成打开。 当这些开关电流基本上为零时打开开关，可以防止比较电路的错误输出（跳闸）。}