公开(公告)号：US20070138028A1

公开(公告)日：2007-06-21

申请号：US11548995

申请日：2006-10-12

Applicant: Vamsy Chodavarapu ,  Alexander Cartwright ,  Albert Titus ,  Rachel Bukowski ,  Frank Bright

Inventor： Vamsy Chodavarapu ,  Alexander Cartwright ,  Albert Titus ,  Rachel Bukowski ,  Frank Bright

IPC: G01F1/64 ,  G01N27/26

CPC classification number: G01N27/4148 ,  G01N27/4145

Abstract: pH-change sensors and related methods are disclosed. One such sensor may have a first ion-sensitive transistor-operational-transconductance-amplifier (the “first IOTA”) and a second ion-sensitive transistor-operational-transconductance-amplifier (the “second IOTA”). Each IOTA may have an ion-sensitive transistor, a load transistor, and an output. In each IOTA, the drain region of the ion-sensitive transistor may be connected to the drain region of the load transistor. A differential sensor may be connected to the IOTAs, and an output from the differential sensor may indicate a voltage difference between the IOTA outputs. The output from the differential sensor may be used to provide an indication of a change in pH.

Abstract translation: 公开了pH变化传感器和相关方法。 一个这样的传感器可以具有第一离子敏感晶体管 - 工作跨导放大器（“第一IOTA”）和第二离子敏感晶体管 - 工作跨导放大器（“第二IOTA”）。 每个IOTA可以具有离子敏感晶体管，负载晶体管和输出。 在每个IOTA中，离子敏感晶体管的漏极区域可以连接到负载晶体管的漏极区域。 差分传感器可以连接到IOTA，差分传感器的输出可以指示IOTA输出之间的电压差。 差分传感器的输出可用于提供pH变化的指示。

公开(公告)号：US20080128021A1

公开(公告)日：2008-06-05

申请号：US11850929

申请日：2007-09-06

Applicant: Kaushik Roy Choudhury ,  Won Jin Kim ,  Yudhisthira Sahoo ,  Kwang Sup Lee ,  Paras N. Prasad ,  Alexander Cartwright ,  Ram B. Thapa

Inventor： Kaushik Roy Choudhury ,  Won Jin Kim ,  Yudhisthira Sahoo ,  Kwang Sup Lee ,  Paras N. Prasad ,  Alexander Cartwright ,  Ram B. Thapa

IPC: H01L31/04 ,  B05D5/12

CPC classification number: H01L51/426 ,  B82Y30/00 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0042 ,  Y02E10/549 ,  Y02P70/521

Abstract: The present invention relates to a nanocomposite device comprising a polymeric matrix, semiconducting nanoparticles, and a semiconducting molecule having a field-effect mobility of at least 0.1 cm2/Vs. In addition, the present invention relates to a method of making a nanocomposite device. The method includes providing a mixture comprising a polymer, semiconducting nanoparticles, and a semiconducting molecule having a field-effect mobility of at least 0.1 cm2/Vs or a soluble precursor thereof, depositing the mixture on a substrate, and treating the mixture under conditions effective to produce a nanocomposite device comprising the polymeric matrix, semiconducting nanoparticles, and the semiconducting molecule having a field-effect mobility of at least 0.1 cm2/Vs. Thin film devices including the nanocomposite device are also disclosed.

Abstract translation: 本发明涉及包含聚合物基质，半导体纳米颗粒和具有至少0.1cm 2 / Vs的场效应迁移率的半导体分子的纳米复合材料装置。 另外，本发明涉及制造纳米复合器件的方法。 该方法包括提供包含聚合物，半导体纳米颗粒和具有至少0.1cm 2 / Vs的场效应迁移率的半导体分子或其可溶性前体的混合物，将该混合物沉积在基底上 并且在有效产生包含聚合物基质，半导体纳米颗粒和具有至少0.1cm 2 / Vs的场效应迁移率的半导体分子的纳米复合器件的条件下处理该混合物。 还公开了包括纳米复合器件的薄膜器件。