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公开(公告)号:US20090001431A1
公开(公告)日:2009-01-01
申请号:US11821971
申请日:2007-06-26
Applicant: Nadia Rahhal-Orabi , Charles H. Wallace , Alison Davis , Swaminathan Sivakumar
Inventor: Nadia Rahhal-Orabi , Charles H. Wallace , Alison Davis , Swaminathan Sivakumar
IPC: H01L29/78 , H01L21/4763
CPC classification number: H01L21/76804 , H01L21/76816 , H01L29/78
Abstract: In one embodiment of the invention, contact patterning may be divided into two or more passes which may allow designers to control the gate height critical dimension relatively independent from the contact top critical dimension.
Abstract translation: 在本发明的一个实施例中,接触图案化可以被分成两个或更多遍,这可以允许设计者相对独立于接触顶部临界尺寸来控制栅极高度临界尺寸。
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公开(公告)号:US20070218685A1
公开(公告)日:2007-09-20
申请号:US11384143
申请日:2006-03-17
Applicant: Swaminathan Sivakumar , Charles Wallace , Alison Davis , Nadia Rahhal-Orabi
Inventor: Swaminathan Sivakumar , Charles Wallace , Alison Davis , Nadia Rahhal-Orabi
IPC: H01L21/44
CPC classification number: H01L21/76808 , H01L21/76816 , H01L21/76895 , H01L23/485
Abstract: A method to form transistor contacts begins with providing a transistor that includes a gate stack and first and second diffusion regions formed on a substrate, and a dielectric layer formed atop the gate stack and the diffusion regions. A first photolithography process forms first and second diffusion trench openings for the first and second diffusion regions. A sacrificial layer is then deposited into the first and second diffusion trench openings. Next, a second photolithography process forms a gate stack trench opening for the gate stack and a local interconnect trench opening coupling the gate stack trench opening to the first diffusion trench opening. The second photolithography process is carried out independent of the first photolithography process. The sacrificial layer is then removed and a metallization process is carried out to fill the first and second diffusion trench openings, the gate stack trench opening, and the local interconnect trench opening with a metal layer.
Abstract translation: 形成晶体管触点的方法开始于提供一种晶体管,该晶体管包括栅极堆叠以及形成在衬底上的第一和第二扩散区域,以及形成在栅极堆叠和扩散区域顶部的电介质层。 第一光刻工艺形成用于第一和第二扩散区域的第一和第二扩散沟槽开口。 然后将牺牲层沉积到第一和第二扩散沟槽开口中。 接下来,第二光刻工艺形成用于栅极堆叠的栅极堆叠沟槽开口和将栅极堆叠沟槽开口耦合到第一扩散沟槽开口的局部互连沟槽开口。 第二光刻工艺是独立于第一光刻工艺进行的。 然后去除牺牲层,并且进行金属化处理以填充第一和第二扩散沟槽开口,栅极堆叠沟槽开口和具有金属层的局部互连沟槽开口。
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公开(公告)号:US11674684B2
公开(公告)日:2023-06-13
申请号:US16750763
申请日:2020-01-23
Applicant: Alison Davis Curry
Inventor: Alison Davis Curry
CPC classification number: F21V35/00 , A47G19/2227 , A47G19/2272 , B65D2543/00092 , B65D2543/00296
Abstract: A lid for a container is provided and includes a lid body that is configured to be securely coupled to the container. The lid body has a base portion and a flange portion that engages the container. The base portion has an integral upstanding candle holder that extends upwardly from the base portion and includes a hollow center section configured to receive and hold a candle in an upright position.
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公开(公告)号:US20210228006A1
公开(公告)日:2021-07-29
申请号:US16750781
申请日:2020-01-23
Applicant: Alison Davis Curry
Inventor: Alison Davis Curry
Abstract: A beverage plug for insertion into a drinking opening of a container lid includes an elongated stick having a first end and an opposite second end with an integral plug portion being formed between the first end and the second end and being configured for plugging the drinking opening. A candle holder is integrally formed at the first end and comprises a cup-shaped structure for receiving and holding a candle.
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公开(公告)号:US07709866B2
公开(公告)日:2010-05-04
申请号:US11821971
申请日:2007-06-26
Applicant: Nadia Rahhal-Orabi , Charles H. Wallace , Alison Davis , Swaminathan Sivakumar
Inventor: Nadia Rahhal-Orabi , Charles H. Wallace , Alison Davis , Swaminathan Sivakumar
IPC: H01L29/51 , H01L21/469
CPC classification number: H01L21/76804 , H01L21/76816 , H01L29/78
Abstract: In one embodiment of the invention, contact patterning may be divided into two or more passes which may allow designers to control the gate height critical dimension relatively independent from the contact top critical dimension.
Abstract translation: 在本发明的一个实施例中,接触图案化可以被分成两个或更多遍,这可以允许设计者相对独立于接触顶部临界尺寸来控制栅极高度临界尺寸。
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公开(公告)号:US20100171156A1
公开(公告)日:2010-07-08
申请号:US12723768
申请日:2010-03-15
Applicant: Nadia Rahhal-Orabi , Charles H. Wallace , Alison Davis , Swaminathan Sivakumar
Inventor: Nadia Rahhal-Orabi , Charles H. Wallace , Alison Davis , Swaminathan Sivakumar
IPC: H01L23/48 , H01L21/768 , H01L21/336 , H01L29/78
CPC classification number: H01L21/76804 , H01L21/76816 , H01L29/78
Abstract: In one embodiment of the invention, contact patterning may be divided into two or more passes which may allow designers to control the gate height critical dimension relatively independent from the contact top critical dimension.
Abstract translation: 在本发明的一个实施例中,接触图案化可以被分成两个或更多遍,这可以允许设计者相对独立于接触顶部临界尺寸来控制栅极高度临界尺寸。
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公开(公告)号:US20210231303A1
公开(公告)日:2021-07-29
申请号:US16750763
申请日:2020-01-23
Applicant: Alison Davis Curry
Inventor: Alison Davis Curry
IPC: F21V35/00
Abstract: A lid for a container is provided and includes a lid body that is configured to be securely coupled to the container. The lid body has a base portion and a flange portion that engages the container. The base portion has an integral upstanding candle holder that extends upwardly from the base portion and includes a hollow center section configured to receive and hold a candle in an upright position.
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