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    Method of forming trench contacts for MOS transistors
    4.
    发明申请
    Method of forming trench contacts for MOS transistors 审中-公开
    形成MOS晶体管的沟槽接触的方法

    公开(公告)号：US20070218685A1

    公开(公告)日：2007-09-20

    申请号：US11384143

    申请日：2006-03-17

    申请人： Swaminathan Sivakumar ,  Charles Wallace ,  Alison Davis ,  Nadia Rahhal-Orabi

    发明人： Swaminathan Sivakumar ,  Charles Wallace ,  Alison Davis ,  Nadia Rahhal-Orabi

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76808 ,  H01L21/76816 ,  H01L21/76895 ,  H01L23/485

    摘要： A method to form transistor contacts begins with providing a transistor that includes a gate stack and first and second diffusion regions formed on a substrate, and a dielectric layer formed atop the gate stack and the diffusion regions. A first photolithography process forms first and second diffusion trench openings for the first and second diffusion regions. A sacrificial layer is then deposited into the first and second diffusion trench openings. Next, a second photolithography process forms a gate stack trench opening for the gate stack and a local interconnect trench opening coupling the gate stack trench opening to the first diffusion trench opening. The second photolithography process is carried out independent of the first photolithography process. The sacrificial layer is then removed and a metallization process is carried out to fill the first and second diffusion trench openings, the gate stack trench opening, and the local interconnect trench opening with a metal layer.

    摘要翻译： 形成晶体管触点的方法开始于提供一种晶体管，该晶体管包括栅极堆叠以及形成在衬底上的第一和第二扩散区域，以及形成在栅极堆叠和扩散区域顶部的电介质层。 第一光刻工艺形成用于第一和第二扩散区域的第一和第二扩散沟槽开口。 然后将牺牲层沉积到第一和第二扩散沟槽开口中。 接下来，第二光刻工艺形成用于栅极堆叠的栅极堆叠沟槽开口和将栅极堆叠沟槽开口耦合到第一扩散沟槽开口的局部互连沟槽开口。 第二光刻工艺是独立于第一光刻工艺进行的。 然后去除牺牲层，并且进行金属化处理以填充第一和第二扩散沟槽开口，栅极堆叠沟槽开口和具有金属层的局部互连沟槽开口。