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    Extremely Low Resistance Films and Methods for Modifying or Creating Same
    3.
    发明申请
    Extremely Low Resistance Films and Methods for Modifying or Creating Same 审中-公开
    极低的电阻膜和修改或创建相同的方法

    公开(公告)号：US20160351303A1

    公开(公告)日：2016-12-01

    申请号：US15167535

    申请日：2016-05-27

    申请人： Ambature, Inc.

    发明人： Douglas J. Gilbert ,  Timothy S. Cale

    IPC分类号： H01B12/06 ,  H01B1/08 ,  H01B12/14 ,  H01L39/12 ,  H01L39/24

    CPC分类号： H01B12/06 ,  B05D1/36 ,  H01B1/08 ,  H01B12/14 ,  H01C7/00 ,  H01L39/12 ,  H01L39/125 ,  H01L39/126 ,  H01L39/24 ,  H01L39/2419 ,  H01L39/2464 ,  H01L39/2487 ,  Y10T428/31678

    摘要： Operational characteristics of an extremely low resistance (“ELR”) film comprised of an ELR material may be improved by depositing a modifying material onto appropriate surfaces of the ELR film to create a modified ELR film. In some implementations of the invention, the ELR film may be in the form of a “c-film.” In some implementations of the invention, the ELR film may be in the form of an “a-b film,” an “a-film” or a “b-film.” The modified ELR film has improved operational characteristics over the ELR film alone or without the modifying material. Such operational characteristics may include operating in an ELR state at increased temperatures, carrying additional electrical charge, operating with improved magnetic properties, operating with improved mechanic properties or other improved operational characteristics. In some implementations of the invention, the ELR material is a mixed-valence copper-oxide perovskite, such as, but not limited to YBCO. In some implementations of the invention, the modifying material is a conductive material that bonds easily to oxygen, such as, but not limited to, chromium.

    摘要翻译： 通过在ELR膜的适当表面上沉积改性材料以产生改性的ELR膜，可以改善由ELR材料构成的极低电阻（“ELR”）膜的操作特性。 在本发明的一些实施方案中，ELR膜可以是“c膜”的形式。在本发明的一些实施方案中，ELR膜可以是“ab膜”的形式，“a膜” “或”b膜“。改性的ELR膜具有比单独的ELR膜或没有改性材料改善的操作特性。 这种操作特征可以包括在升高的温度下操作ELR状态，携带额外的电荷，以改进的磁性能操作，以改进的机械性能或其他改进的操作特性进行操作。 在本发明的一些实施方案中，ELR材料是混合价态的氧化铜 - 钙钛矿，例如但不限于YBCO。 在本发明的一些实施方案中，改性材料是易于​​氧接触的导电材料，例如但不限于铬。

    SUPERCONDUCTING WIRE
    4.
    发明申请
    SUPERCONDUCTING WIRE 审中-公开
    超导线

    公开(公告)号：US20150279519A1

    公开(公告)日：2015-10-01

    申请号：US14236899

    申请日：2013-06-26

    申请人： FURUKAWA ELECTRIC CO., LTD.

    发明人： Masaru Higuchi ,  Hisaki Sakamoto ,  Nobuaki Orita ,  Norihisa Shibayama

    IPC分类号： H01B12/06 ,  H01L39/12 ,  H01L39/24 ,  H01B13/30

    CPC分类号： H01B12/06 ,  H01B13/30 ,  H01L39/125 ,  H01L39/24 ,  H01L39/2461

    摘要： A superconducting wire is provided which allows an appropriate critical current property to be obtained while maintaining high adhesive strength based on smoothness of a substrate surface that can be achieved without mechanical polishing or the like. A first intermediate layer 21 is formed by coating a material solution on a substrate 10 with a maximum height roughness Rz of 10 nm or more. This improves surface smoothness of the first intermediate layer 21, improves orientation and smoothness of a second intermediate layer 22 formed on the first intermediate layer 21, and increases a critical current in an oxide superconducting layer 30. Furthermore, the first intermediate layer 21 is formed of a plurality of thin coating film layers 21i. The thin coating film layers 21i are deposited such that an uppermost thin coating film layer has a smaller film thickness than a lowermost thin coating film layer and/or a material solution used for the uppermost thin coating film layer has a lower viscosity than a material solution used for the lowermost thin coating film layer. This improves the surface smoothness of the first intermediate layer 21.

    摘要翻译： 提供了一种超导线，其允许在基于在没有机械抛光等的情况下可以实现的基板表面的平滑度的同时保持高粘合强度的同时获得适当的临界电流特性。 第一中间层21通过以10nm以上的最大高度粗糙度Rz在基板10上涂布材料溶液而形成。 这提高了第一中间层21的表面平滑度，改善了形成在第一中间层21上的第二中间层22的取向和平滑度，并且增加了氧化物超导层30中的临界电流。此外，形成第一中间层21 的多个薄膜层21i。 沉积薄的涂膜层21i，使得最薄的涂膜层的膜厚比最下面的薄膜层薄，和/或用于最上面的薄涂层层的材料溶液的粘度低于材料溶液 用于最薄的薄膜层。 这提高了第一中间层21的表面平滑度。

    Method of making material exhibiting superconductivity characteristics
    6.
    发明授权
    Method of making material exhibiting superconductivity characteristics 有权
    制造具有超导特性的材料的方法

    公开(公告)号：US07884051B1

    公开(公告)日：2011-02-08

    申请号：US12710751

    申请日：2010-02-23

    申请人： Armen M Gulian ,  Kent S Wood ,  Deborah Van Vechten ,  Vahan R Nikoghosyan

    发明人： Armen M Gulian ,  Kent S Wood ,  Deborah Van Vechten ,  Vahan R Nikoghosyan

    IPC分类号： H01L39/24

    CPC分类号： H01L39/125 ,  C01G55/00 ,  C01P2002/54 ,  C01P2004/03 ,  C01P2006/40 ,  C01P2006/42 ,  H01L39/249 ,  Y10T29/49014

    摘要： The invention herein is directed towards a method of making material exhibiting superconductivity characteristics which includes a laser processed region of a metal oxide crystal. The material has a transition temperature greater than a transition temperature of the metal oxide crystal, preferably greater than 140K. The transition temperature of the material may be considered greater than the transition temperature of the metal oxide crystal if the material has a transition temperature and the metal oxide crystal has no transition temperature. The present invention is also directed to a material which includes a laser processed strontium ruthenate crystal wherein the material has a greater oxygen content than the starting strontium ruthenate crystal. The present invention is also directed towards a method for manufacturing a material exhibiting superconductivity characteristics that includes providing a metal oxide crystal and laser ablating the metal oxide crystal and a material made by this process.

    摘要翻译： 本发明涉及一种制造显示超导特性的材料的方法，其包括金属氧化物晶体的激光处理区域。 该材料具有大于金属氧化物晶体的转变温度的转变温度，优选大于140K。 如果材料具有转变温度并且金属氧化物晶体没有转变温度，则材料的转变温度可以被认为大于金属氧化物晶体的转变温度。 本发明还涉及一种材料，其包括激光加工的钌酸锶晶体，其中该材料的氧含量比起始钌酸锶晶体大。 本发明还涉及一种用于制造显示超导特性的材料的方法，其包括提供金属氧化物晶体和激光烧蚀金属氧化物晶体以及通过该工艺制造的材料。

    SUPERCONDUCTING COMPOUND AND METHOD FOR PRODUCING THE SAME
    7.
    发明申请
    SUPERCONDUCTING COMPOUND AND METHOD FOR PRODUCING THE SAME 有权
    超级化合物及其制造方法

    公开(公告)号：US20110002832A1

    公开(公告)日：2011-01-06

    申请号：US12865940

    申请日：2009-02-17

    申请人： Hideo Hosono ,  Yoichi Kamihara ,  Masahiro Hirano ,  Toshio Kamiya ,  Hiroshi Yanagi

    发明人： Hideo Hosono ,  Yoichi Kamihara ,  Masahiro Hirano ,  Toshio Kamiya ,  Hiroshi Yanagi

    IPC分类号： C01F17/00

    CPC分类号： C01G53/006 ,  C01G49/009 ,  C01G55/002 ,  C01P2002/52 ,  C01P2002/72 ,  C01P2002/76 ,  C01P2002/78 ,  C01P2002/88 ,  C01P2006/40 ,  C01P2006/42 ,  C04B35/447 ,  C04B2235/3208 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3279 ,  C04B2235/40 ,  C04B2235/405 ,  C04B2235/42 ,  C04B2235/445 ,  H01L39/125

    摘要： Disclosed is a superconducting compound which has a structure obtained by partially substituting oxygen ions of a compound, which is represented by the following chemical formula; LnTMOPh [wherein Ln represents at least one element selected from Y and rare earth metal elements (La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu), TM represents at least one element selected from transition metal elements (Fe, Ru, Os, Ni, Pd and Pt), and Pn represents at least one element selected from pnictide elements (N, P, As and Sb)] and has a ZrCuSiAs-type crystal structure (space group P4/nmm), with at least one kind of monovalent anion (F−, Cl− or Br−). The superconducting compound alternatively has a structure obtained by partially substituting Ln ions of the compound with at least one kind of tetravalent metal ion (Ti4+, Zr4+, Hf4+, C4+, Si4+, Ge4+, Sn4+ or Pb4+) or a structure obtained by partially substituting Ln ions of the compound with at least one kind of divalent metal ion (Mg2+, Ca2+, Sr2+ or Ba2+). The Tc of the superconducting compound is controlled in accordance with the ion substitution amount.

    摘要翻译： 公开了一种超导化合物，其具有通过部分取代由以下化学式表示的化合物的氧离子而获得的结构; LnTMOPh [其中Ln表示选自Y和稀土金属元素（La，Ce，Pr，Nd，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb和Lu）中的至少一种元素，TM表示 选自过渡金属元素（Fe，Ru，Os，Ni，Pd和Pt）中的至少一种元素，Pn表示选自铌元素（N，P，As和Sb）中的至少一种元素]，并且具有ZrCuSiAs型晶体 结构（空间群P4 / nmm），具有至少一种一价阴离子（F-，Cl-或Br-）。 超导化合物或者具有通过用至少一种四价金属离子（Ti 4+，Zr 4+，Hf 4+，C 4+，Si 4+，Ge 4+，Sn 4+或Pb 4+）部分取代化合物的Ln离子或通过部分取代Ln而获得的结构而获得的结构 化合物与至少一种二价金属离子（Mg2 +，Ca2 +，Sr2 +或Ba2 +）的离子。 超导化合物的Tc根据离子取代量进行控制。