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    Superconductive Memory Cells and Devices
    3.
    发明公开
    Superconductive Memory Cells and Devices 审中-公开

    公开(公告)号：US20240249770A1

    公开(公告)日：2024-07-25

    申请号：US18587872

    申请日：2024-02-26

    Applicant: PsiQuantum Corp,

    Inventor： Faraz Najafi

    IPC: G11C11/44 ,  H10N60/01 ,  H10N60/30 ,  H10N60/83 ,  H10N60/84 ,  H10N60/85 ,  H10N69/00

    CPC classification number: G11C11/44 ,  H10N60/30 ,  H10N60/83 ,  H10N60/84 ,  H10N69/00 ,  H10N60/01 ,  H10N60/85

    Abstract: An example memory cell includes a superconducting loop configured to receive a write current and form a persistent current that stores a data bit in the superconducting loop. The example memory cell further includes a superconducting wire coupled to the superconducting loop and configured to selectively read-out the data bit in the superconducting loop in response to a control signal. An example method of reading data from the memory cell includes receiving, at the superconducting loop, a write current to store a data bit in a superconducting loop, and forming a persistent current that circulates in the superconducting loop as a stored data bit. The example method further includes, in accordance with a control signal, transferring, via a superconducting wire of the memory cell that is coupled to the superconducting loop, at least a portion of the persistent current to an output of the memory cell.

    One-electrode cell and series of two or more cells as a device
    4.
    发明授权
    One-electrode cell and series of two or more cells as a device 有权

    公开(公告)号：US12040398B2

    公开(公告)日：2024-07-16

    申请号：US17613992

    申请日：2020-05-26

    Applicant: UNIVERSIDADE DO PORTO

    Inventor： Maria Helena Sousa Soares De Oliveira Braga

    IPC: H01L29/78 ,  H10N60/00 ,  H10N60/85

    CPC classification number: H01L29/78391 ,  H10N60/85 ,  H10N60/99

    Abstract: The present invention relates to a one-electrode cell and series of two or more cells as a device at temperatures from below to above room temperature comprising a very high permittivity ferroelectric.
    In a device constituted by one or more ferroelectricity-induced superconductor cells, the cells do not have to be in physical contact with one another; one terminal can be connected to a first cell and the other connected to a third cell without physical contact between any of the three cells. With the spontaneous and dynamic alignment of the dipoles of the ferroelectric, a potential difference is induced in different points of the surface of the cell, cells or device and a current can be harvested by conductor-terminals.
    The present invention can be used for contactless charging of energy storage devices and as a part of several components or products.

    High temperature superconducting films and methods for modifying and creating same
    6.
    发明授权
    High temperature superconducting films and methods for modifying and creating same 有权

    公开(公告)号：US11930722B2

    公开(公告)日：2024-03-12

    申请号：US17727784

    申请日：2022-04-24

    Applicant: Ambature, Inc.

    Inventor： Douglas J. Gilbert ,  Timothy S. Cale

    IPC: H10N60/85 ,  H10N60/01

    CPC classification number: H10N60/858 ,  H10N60/01 ,  H10N60/0296 ,  H10N60/85 ,  Y10T29/49014 ,  Y10T428/24322 ,  Y10T428/31678

    Abstract: Operational characteristics of an high temperature superconducting (“HTS”) film comprised of an HTS material may be improved by depositing a modifying material onto appropriate surfaces of the HTS film to create a modified HTS film. In some implementations of the invention, the HTS film may be in the form of a “c-film.” In some implementations of the invention, the HTS film may be in the form of an “a-b film,” an “a-film” or a “b-film.” The modified HTS film has improved operational characteristics over the HTS film alone or without the modifying material. Such operational characteristics may include operating in a superconducting state at increased temperatures, carrying additional electrical charge, operating with improved magnetic properties, operating with improved mechanic properties or other improved operational characteristics. In some implementations of the invention, the HTS material is a mixed-valence copper-oxide perovskite, such as, but not limited to YBCO. In some implementations of the invention, the modifying material is a conductive material that bonds easily to oxygen, such as, but not limited to, chromium.

    Monofilament for producing an Nb
    10.
    发明授权
    Monofilament for producing an Nb 有权

    公开(公告)号：US11758827B2

    公开(公告)日：2023-09-12

    申请号：US16664123

    申请日：2019-10-25

    Applicant: Bruker EAS GmbH

    Inventor： Carl Buehler ,  Vital Abaecherli ,  Bernd Sailer ,  Klaus Schlenga ,  Manfred Thoener ,  Matheus Wanior

    IPC: H10N60/01 ,  B22F5/12 ,  B22F7/04 ,  H01B12/06 ,  H10N60/85

    CPC classification number: H10N60/0128 ,  B22F5/12 ,  B22F7/04 ,  H01B12/06 ,  H10N60/0156 ,  H10N60/85

    Abstract: A monofilament (100) for producing an Nb3Sn-containing superconductor wire (33) includes a powder core (1) with an Sn-containing powder, a reaction tube (3) composed of an Nb alloy that includes Nb and at least one further alloy component X. The powder core is disposed within the reaction tube. The monofilament also includes at least one source (4) for at least one partner component Pk. A respective source includes one or more source structures at a unitary radial position in the monofilament. The alloy component X and the partner component Pk form precipitates XPk on reaction annealing of the monofilament in which Sn from the powder core and Nb from the reaction tube react to produce Nb3Sn. The powder core is disposed in a moderation tube, which in turn is disposed within the reaction tube. This provides a monofilament for a powder-in-tube based Nb3Sn-containing superconductor wire with improved current carrying capacity.

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