公开(公告)号：US4679311A

公开(公告)日：1987-07-14

申请号：US808597

申请日：1985-12-12

申请人： Amir A. Lakhani ,  Laurence C. Olver

发明人： Amir A. Lakhani ,  Laurence C. Olver

IPC分类号： H01L21/285 ,  H01L21/3213 ,  H01L21/338 ,  H01L21/283 ,  H01L21/308

CPC分类号： H01L29/66863 ,  H01L21/28587 ,  H01L21/32134 ,  Y10S148/143

摘要： A method of fabricating a self-aligned field-effect transistor having a T-shaped gate electrode and a sub-micron gate length. In the method of the present invention, a multi-layer gate structure is formed on an active region formed in a semiconductor substrate. A first aluminum layer of the gate structure, which is adjacent to the active region, is selectively etched to form a T-shaped gate electrode. The etching provides the first layer of the gate electrode with a gate length of less than 0.75 microns, and the T-shaped gate electrode is used as a shadow-mask to deposit self-aligned source and drain electrodes.

摘要翻译： 一种制造具有T形栅电极和亚微米栅极长度的自对准场效应晶体管的方法。 在本发明的方法中，在形成在半导体衬底中的有源区上形成多层栅极结构。 选择性地蚀刻与有源区相邻的栅极结构的第一铝层以形成T形栅电极。 蚀刻提供具有小于0.75微米的栅极长度的栅电极的第一层，并且T形栅电极用作阴影掩模以沉积自对准的源极和漏极。

公开(公告)号：US4662060A

公开(公告)日：1987-05-05

申请号：US808916

申请日：1985-12-13

申请人： Olaleye A. Aina ,  Amir A. Lakhani

发明人： Olaleye A. Aina ,  Amir A. Lakhani

IPC分类号： H01L21/28 ,  H01L21/265 ,  H01L21/285 ,  H01L21/338 ,  H01L29/812 ,  H01S5/00 ,  H01L21/283

CPC分类号： H01L29/66863 ,  H01L21/2656 ,  H01L21/28575 ,  H01L21/28581 ,  H01L29/66878 ,  Y10S148/14 ,  Y10S438/951

摘要： A method of forming a semiconductor device having a non-alloyed contact layer. An active region is formed in a substrate and the non-alloyed contact layer is formed in the active region, the barrier height of source and drain electrodes for the non-alloyed contact layer being lower than the barrier height of the source and drain electrodes for the active region or the substrate. The preferred method of forming the non-alloyed contact layer is high dose implantation of an element selected in accordance with the substrate material. For example, if the substrate is GaAs the non-alloyed contact layer is formed by implanting In, and if the substrate is InP the non-alloyed contact layer is formed by implanting As or Sb.

摘要翻译： 一种形成具有非合金接触层的半导体器件的方法。 在基板中形成有源区，在有源区形成非合金化接触层，非合金化接触层的源电极和漏电极的势垒高度低于源极和漏极的势垒高度， 有源区或基底。 形成非合金化接触层的优选方法是根据基材材料选择的元素的高剂量注入。 例如，如果衬底是GaAs，则通过注入In形成非合金接触层，并且如果衬底是InP，则通过注入As或Sb形成非合金接触层。