公开(公告)号：US08507038B2

公开(公告)日：2013-08-13

申请号：US12794454

申请日：2010-06-04

Applicant: Thomas Waechtler ,  Thomas Gessner ,  Stefan Schulz ,  Heinrich Lang ,  Alexander Jakob

Inventor： Thomas Waechtler ,  Thomas Gessner ,  Stefan Schulz ,  Heinrich Lang ,  Alexander Jakob

IPC: C23C16/00 ,  H01L21/768

CPC classification number: C23C16/45553 ,  C23C16/18 ,  C23C16/408 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76898

Abstract: A method can be used for the production of a coated substrate. The coating contains copper. A copper precursor and a substrate are provided. The copper precursor is a copper(I) complex which contains no fluorine. A copper-containing layer is deposited by means of atomic layer deposition (ALD) at least on partial regions of the substrate surface by using the precursor. Optionally, a reduction step is performed in which a reducing agent acts on the substrate obtained in the layer deposition step. In various embodiments, the precursor is a complex of the formula L2Cu(X∩X) in which L are identical or different σ-donor-π acceptor ligands and/or identical or different σ,π-donor-π acceptor ligands and X∩X is a bidentate ligand which is selected from the group consisting of β-diketonates, β-ketoiminates, β-diiminates, amidinates, carboxylates and thiocarboxylates.

Abstract translation: 可以使用一种方法来生产涂覆的基底。 涂层含有铜。 提供铜前体和基底。 铜前体是不含氟的铜（I）络合物。 通过使用前体，通过原子层沉积（ALD）至少在衬底表面的部分区域上沉积含铜层。 任选地，进行还原步骤，其中还原剂作用在在层沉积步骤中获得的基底上。 在各种实施方案中，前体是式L2Cu（X∩X）的络合物，其中L是相同或不同的σ-供体-π受体配体和/或相同或不同的σ，pi-供体-I受体配体和X∩ X是选自β-二酮酸酯，β-酮亚胺酸酯，β-二亚胺酸酯，脒酯，羧酸酯和硫代羧酸酯的二齿配体。

公开(公告)号：US20100301478A1

公开(公告)日：2010-12-02

申请号：US12794454

申请日：2010-06-04

Applicant: Thomas Waechtler ,  Thomas Gessner ,  Stefan Schulz ,  Heinrich Lang ,  Alexander Jakob

Inventor： Thomas Waechtler ,  Thomas Gessner ,  Stefan Schulz ,  Heinrich Lang ,  Alexander Jakob

IPC: H01L23/498 ,  H01L21/768

CPC classification number: C23C16/45553 ,  C23C16/18 ,  C23C16/408 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76898

Abstract: A method can be used for the production of a coated substrate. The coating contains copper. A copper precursor and a substrate are provided. The copper precursor is a copper(I) complex which contains no fluorine. A copper-containing layer is deposited by means of atomic layer deposition (ALD) at least on partial regions of the substrate surface by using the precursor. Optionally, a reduction step is performed in which a reducing agent acts on the substrate obtained in the layer deposition step. In various embodiments, the precursor is a complex of the formula L2Cu(X∩X) in which L are identical or different σ-donor-π acceptor ligands and/or identical or different σ,π-donor-π acceptor ligands and X∩X is a bidentate ligand which is selected from the group consisting of β-diketonates, β-ketoiminates, β-diiminates, amidinates, carboxylates and thiocarboxylates.

Abstract translation: 可以使用一种方法来生产涂覆的基底。 涂层含有铜。 提供铜前体和基底。 铜前体是不含氟的铜（I）络合物。 通过使用前体，通过原子层沉积（ALD）至少在衬底表面的部分区域上沉积含铜层。 任选地，进行还原步骤，其中还原剂作用在在层沉积步骤中获得的基底上。 在各种实施方案中，前体是式L2Cu（X∩X）的络合物，其中L是相同或不同的，并且被供体 - 受体配体和/或相同或不同的“和” - 供体 - 受体配体和X∩X是二齿配体，其选自＆amp; big-二酮化合物，酮基，β-二亚胺，脒基，羧酸酯和硫代羧酸盐。

公开(公告)号：US09005705B2

公开(公告)日：2015-04-14

申请号：US13232569

申请日：2011-09-14

Applicant: Thomas Waechtler ,  Stefan Schulz ,  Thomas Gessner ,  Steve Mueller ,  André Tuchscherer ,  Heinrich Lang

Inventor： Thomas Waechtler ,  Stefan Schulz ,  Thomas Gessner ,  Steve Mueller ,  André Tuchscherer ,  Heinrich Lang

IPC: C23C16/00 ,  C23C16/18 ,  H01L21/768 ,  H01L21/285 ,  C23C16/455

CPC classification number: C23C16/18 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/76873 ,  H01L21/76898

Abstract: A method for producing a substrate with a copper or a copper-containing coating is disclosed. The method comprises a first step wherein a first precursor, a second precursor and a substrate are provided. The first precursor is a copper complex that contains no fluorine and the second precursor is selected from a ruthenium complex, a nickel complex, a palladium complex or mixtures thereof. In the second step, a layer is deposited at least on partial regions of a surface of the substrate by using the first precursor and the second precursor by means of atomic layer deposition (ALD). The molar ratio of the first precursor:second precursor used for the ALD extends from 90:10 to 99.99:0.01. The obtained layer contains copper and at least one of ruthenium, nickel and palladium. Finally, a reduction is performed step in which a reducing agent acts on the substrate obtained after depositing the copper-containing layer.

Abstract translation: 公开了一种用铜或含铜涂层制造衬底的方法。 该方法包括第一步骤，其中提供第一前体，第二前体和基底。 第一前体是不含氟的铜络合物，第二前体选自钌络合物，镍络合物，钯络合物或其混合物。 在第二步骤中，通过使用第一前体和第二前体借助于原子层沉积（ALD），至少在衬底的表面的部分区域上沉积一层。 用于ALD的第一前体：第二前体的摩尔比从90:10延伸至99.99:0.01。 所得层含有铜和钌，镍和钯中的至少一种。 最后，进行还原反应，其中还原剂作用于在沉积含铜层之后获得的基板上。

公开(公告)号：US20130062768A1

公开(公告)日：2013-03-14

申请号：US13232569

申请日：2011-09-14

Applicant: Thomas WAECHTLER ,  Stefan SCHULZ ,  Thomas GESSNER ,  Steve MUELLER ,  André TUCHSCHERER ,  Heinrich LANG

Inventor： Thomas WAECHTLER ,  Stefan SCHULZ ,  Thomas GESSNER ,  Steve MUELLER ,  André TUCHSCHERER ,  Heinrich LANG

IPC: H01L23/48 ,  H01L21/28

CPC classification number: C23C16/18 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/76873 ,  H01L21/76898

Abstract: A method for producing a substrate with a copper or a copper-containing coating is disclosed. The method comprises a first step wherein a first precursor, a second precursor and a substrate are provided. The first precursor is a copper complex that contains no fluorine and the second precursor is selected from a ruthenium complex, a nickel complex, a palladium complex or mixtures thereof. In the second step, a layer is deposited at least on partial regions of a surface of the substrate by using the first precursor and the second precursor by means of atomic layer deposition (ALD). The molar ratio of the first precursor:second precursor used for the ALD extends from 90:10 to 99.99:0.01. The obtained layer contains copper and at least one of ruthenium, nickel and palladium. Finally, a reduction is performed step in which a reducing agent acts on the substrate obtained after depositing the copper-containing layer.

Abstract translation: 公开了一种用铜或含铜涂层制造衬底的方法。 该方法包括第一步骤，其中提供第一前体，第二前体和基底。 第一前体是不含氟的铜络合物，第二前体选自钌络合物，镍络合物，钯络合物或其混合物。 在第二步骤中，通过使用第一前体和第二前体借助于原子层沉积（ALD），至少在衬底的表面的部分区域上沉积一层。 用于ALD的第一前体：第二前体的摩尔比从90:10延伸至99.99:0.01。 所得层含有铜和钌，镍和钯中的至少一种。 最后，进行还原反应，其中还原剂作用于在沉积含铜层之后获得的基板上。