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公开(公告)号：US08630125B2
公开(公告)日：2014-01-14
申请号：US13151456
申请日：2011-06-02
IPC分类号： G11C16/06
CPC分类号： G11C16/26 , G11C11/5642 , G11C16/0483 , G11C16/3436
摘要： The present disclosure includes devices, methods, and systems including memory cell sensing using a boost voltage. One or more embodiments include pre-charging and/or floating a data line associated with a selected memory cell, boosting the pre-charged and/or floating data line, and determining a state of the selected memory cell based on a sensed discharge of the data line after boosting the data line.
摘要翻译： 本公开包括包括使用升压电压的存储器单元感测的装置，方法和系统。 一个或多个实施例包括预先充电和/或浮动与所选择的存储器单元相关联的数据线，升压预充电和/或浮置数据线，以及基于感测到的放电，确定所选择的存储器单元的状态 提升数据线后的数据线。
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公开(公告)号：US20180286476A1
公开(公告)日：2018-10-04
申请号：US15476654
申请日：2017-03-31
摘要： An apparatus is described. The apparatus includes a non volatile memory device that includes a controller to implement a coarse write process for the non volatile memory device. The non volatile memory device includes storage cells to store more than two logic states, wherein, the coarse write process is to perform a verify operation early in the coarse write process to identify less responsive storage cells and provide additional charge to the less responsive storage cells as compared to non less responsive storage cells that are to be programmed to a same logical state as the less responsive storage cells without performing a following verify operation after each pulse of charge applied during the coarse write process.
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公开(公告)号：US20120307566A1
公开(公告)日：2012-12-06
申请号：US13151456
申请日：2011-06-02
IPC分类号： G11C16/26
CPC分类号： G11C16/26 , G11C11/5642 , G11C16/0483 , G11C16/3436
摘要： The present disclosure includes devices, methods, and systems including memory cell sensing using a boost voltage. One or more embodiments include pre-charging and/or floating a data line associated with a selected memory cell, boosting the pre-charged and/or floating data line, and determining a state of the selected memory cell based on a sensed discharge of the data line after boosting the data line.
摘要翻译： 本公开包括包括使用升压电压的存储器单元感测的装置，方法和系统。 一个或多个实施例包括预先充电和/或浮动与所选择的存储器单元相关联的数据线，升压预充电和/或浮置数据线，以及基于感测到的放电，确定所选择的存储器单元的状态 提升数据线后的数据线。
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公开(公告)号：US10102903B1
公开(公告)日：2018-10-16
申请号：US15476654
申请日：2017-03-31
摘要： An apparatus is described. The apparatus includes a non volatile memory device that includes a controller to implement a coarse write process for the non volatile memory device. The non volatile memory device includes storage cells to store more than two logic states, wherein, the coarse write process is to perform a verify operation early in the coarse write process to identify less responsive storage cells and provide additional charge to the less responsive storage cells as compared to non less responsive storage cells that are to be programmed to a same logical state as the less responsive storage cells without performing a following verify operation after each pulse of charge applied during the coarse write process.
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