公开(公告)号：US4894352A

公开(公告)日：1990-01-16

申请号：US263162

申请日：1988-10-26

Applicant: Andrew P. Lane ,  Douglas A. Webb ,  Gene R. Frederick

Inventor： Andrew P. Lane ,  Douglas A. Webb ,  Gene R. Frederick

IPC: C23C16/34 ,  C23C16/30 ,  C23C16/40 ,  H01L21/316

CPC classification number: C23C16/402 ,  Y10S148/114 ,  Y10S148/118

Abstract: In a low-pressure reactor, the addition of nitrogen trifluoride to a gaseous organosilicon compound such as tetraethoxysilane (TEOS) or tetramethylcyclotetroxysilane (TMCTS) results in surprisingly enhanced silicon dioxide deposition rates. The oxide deposited using this process also has the capability of filling features having aspects ratios up to at least 1.0, and may exhibit low mobile ion concentrations. The process is also applicable for depositing other silicon-containing films such as polysilicon and silicon nitride.

公开(公告)号：US5401692A

公开(公告)日：1995-03-28

申请号：US77217

申请日：1993-06-15

Applicant: Andrew P. Lane ,  Norris E. Tidwell

Inventor： Andrew P. Lane ,  Norris E. Tidwell

IPC: H01L21/316 ,  H01L21/68 ,  H01L21/02

CPC classification number: H01L21/6835 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L2924/3025

Abstract: A wafer 2 is supported polished (active) face down in a recess formed in the upper surface of a second wafer 4 which serves as a wafer support. The two wafers 2, 4 are disposed in an atmosphere of steam at 900.degree. C. at a pressure of 500 psi which results in forming an oxide on the polished face of the wafer 2.

Abstract translation: 晶片2在形成在用作晶片支撑件的第二晶片4的上表面中的凹部中被向下抛光（有源）被支撑。 将两个晶片2,4在500℃的压力下在900℃的蒸气气氛中配置，这导致在晶片2的抛光面上形成氧化物。