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1.发明授权Use of laser energy transparent stop layer to achieve minimal debris generation in laser scribing a multilayer patterned workpiece 有权使用激光能量透明阻挡层，在激光刻划多层图案化工件时实现最小的碎片生成公开(公告)号：US07977213B1
公开(公告)日：2011-07-12
申请号：US12751736
申请日：2010-03-31
IPC分类号： H01L21/00
CPC分类号： H01L21/78 , B23K26/0622 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/172 , B23K2103/52
摘要： A solution to failure mechanisms caused by mechanical sawing of a mechanical semiconductor workpiece entails use of a laser beam to cut and remove the electrically conductive and low-k dielectric material layers from a dicing street before saw dicing to separate semiconductor devices. A laser beam forms a laser scribe region such as a channel in the electrically conductive and low-k dielectric material layers, the bottom of the channel ending on a laser energy transparent stop layer of silicon oxide lying below all of the electrically conductive and low-k dielectric material layers. The disclosed process entails selection of laser parameters such as wavelength, pulse width, and fluence that cooperate to leave the silicon oxide layer stop layer completely or nearly undamaged. A mechanical saw cuts the silicon oxide layer and all other material layers below it, as well as the substrate, to separate the semiconductor devices.
摘要翻译： 通过机械半导体工件的机械锯切引起的故障机制的解决方案需要使用激光束在切割切割以分离半导体器件之前从切割街道切割并去除导电和低k电介质材料层。 激光束在导电和低k电介质材料层中形成诸如沟道的激光刻划区域，通道的底部终止于低于所有导电和低k电介质材料层的氧化硅的激光能量透明阻挡层， k电介质材料层。 所公开的方法需要选择激光参数，例如协调以使氧化硅层停止层完全或几乎未损坏的波长，脉冲宽度和能量密度。 机械锯切割氧化硅层和其下面的所有其它材料层以及衬底以分离半导体器件。
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2.发明授权Method for preparing a semiconductor substrate surface for semiconductor device fabrication 有权半导体器件制造半导体衬底表面的制备方法公开(公告)号：US07132372B2
公开(公告)日：2006-11-07
申请号：US10901589
申请日：2004-07-29
申请人： Steven M. Smith , Diana J. Convey , Andy E. Hooper , Yi Wei
发明人： Steven M. Smith , Diana J. Convey , Andy E. Hooper , Yi Wei
IPC分类号： H01L21/31
CPC分类号： H01L21/02052 , H01L21/02046 , Y10S438/906
摘要： A method for preparing a semiconductor substrate surface (28) for semiconductor device fabrication, includes providing a semiconductor substrate (20) having a pure Ge surface layer (28) or a Ge-containing surface layer (12), such as SiGe. The semiconductor substrate (20) is cleaned using a first oxygen plasma process (14) to remove foreign matter (30) from the surface (28) of the substrate (20). The substrate surface (28) is next immersed in a hydrochloric acid solution (16) to remove additional foreign matter (30) from the surface (28) of the substrate (20). The immersion step is followed by a second oxygen plasma etch process (18), passivate the surface with a passivation layer (34), and provide for an atomically smooth surface for subsequent epitaxial or gate dielectric growth.
摘要翻译： 一种制备用于半导体器件制造的半导体衬底表面（28）的方法，包括提供具有纯Ge表面层（28）或诸如SiGe的含Ge表面层（12）的半导体衬底（20）。 使用第一氧等离子体工艺（14）清洁半导体衬底（20）以从衬底（20）的表面（28）去除异物（30）。 接下来将衬底表面（28）浸入盐酸溶液（16）中以从衬底（20）的表面（28）除去另外的异物（30）。 浸入步骤之后是第二氧等离子体蚀刻工艺（18），用钝化层（34）钝化表面，并提供用于随后的外延或栅极电介质生长的原子光滑表面。
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公开(公告)号：US08178906B2
公开(公告)日：2012-05-15
申请号：US11972660
申请日：2008-01-11
申请人： Andy E. Hooper , Allen Kawasaki , Robert Hainsey
发明人： Andy E. Hooper , Allen Kawasaki , Robert Hainsey
IPC分类号： H01L29/04
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A laser activated phase change device for use in an integrated circuit comprises a chalcogenide fuse configured to connect a first patterned metal line and a second patterned metal line and positioned between an inter layer dielectric and an over fuse dielectric. The fuse interconnects active semiconductor elements manufactured on a substrate. A method for activating the laser activated phase change device includes selecting a laser condition of a laser based on characteristics of the fuse and programming a phase-change of the fuse with the laser by direct photon absorption until a threshold transition temperature is met.
摘要翻译： 用于集成电路的激光激活相变装置包括被配置为连接第一图案化金属线和第二图案化金属线并位于层间电介质和过熔断绝缘体之间的硫族化物保险丝。 熔丝将在衬底上制造的有源半导体元件互连。 用于激活激光激活相变装置的方法包括：基于熔丝的特性来选择激光的激光状态，并通过直接光子吸收来编程与激光器的熔丝的相变直到达到阈值转变温度。
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4.发明申请STACKABLE SEMICONDUCTOR CHIP WITH EDGE FEATURES AND METHODS OF FABRICATING AND PROCESSING SAME 审中-公开具有边缘特征的可堆叠半导体芯片及其制造和处理方法公开(公告)号：US20120133381A1
公开(公告)日：2012-05-31
申请号：US12956030
申请日：2010-11-30
CPC分类号： H01L22/32 , G01R31/2884 , H01L25/0652 , H01L25/0657 , H01L2224/48091 , H01L2225/06506 , H01L2225/0651 , H01L2225/06534 , H01L2225/06551 , H01L2225/06596 , H01L2924/1461 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
摘要： A method of performing a function on a three-dimensional semiconductor chip package as well as on individual chips in the package is disclosed. That method involves the creation of an operative relationship between a function performer and an edge feature on the chip or chips wherein the edge feature consists of one or more of an electrically conductive pad, thermally conductive pad, a probe pad, a fuse, a resistor, a capacitor, an inductor, an optical emitter, an optical receiver, a test pad, a bond pad, a contact pin, a heat dissipator, an alignment marker, a metrology feature and a function performer may be any one or more of a test probe, the laser, a programming device, an interrogation device, a loading device or a tuning device. In addition, a chip per se with edge features is disclosed along with a three-dimensional stack of such chips in either of several different configurations. The disclosure provides information regarding the formation of edge feature, the singulation of dice having incipient edge features, the stacking of dice and the handling or dice with edge features.
摘要翻译： 公开了一种在三维半导体芯片封装以及封装中的各个芯片上执行功能的方法。 该方法涉及在功能执行器和芯片上的边缘特征之间创建操作关系，其中边缘特征由导电焊盘，导热焊盘，探针焊盘，熔丝，电阻器中的一个或多个组成 ，电容器，电感器，光发射器，光接收器，测试焊盘，接合焊盘，接触针，散热器，对准标记，计量特征和功能执行器可以是以下中的任何一个或多个： 测试探头，激光器，编程设备，询问设备，加载设备或调谐设备。 此外，具有边缘特征的芯片本身以及几种不同配置中的任何一种的这种芯片的三维堆叠被公开。 本公开提供了关于边缘特征的形成，具有初始边缘特征的骰子的分割，骰子的堆叠以及具有边缘特征的处理或骰子的信息。
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公开(公告)号：US20090179201A1
公开(公告)日：2009-07-16
申请号：US11972660
申请日：2008-01-11
申请人： Andy E. Hooper , Allen Kawasaki , Robert Hainsey
发明人： Andy E. Hooper , Allen Kawasaki , Robert Hainsey
IPC分类号： H01L29/04 , H01L21/263
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A laser activated phase change device for use in an integrated circuit comprises a chalcogenide fuse configured to connect a first patterned metal line and a second patterned metal line and positioned between an inter layer dielectric and an over fuse dielectric. The fuse interconnects active semiconductor elements manufactured on a substrate. A method for activating the laser activated phase change device includes selecting a laser condition of a laser based on characteristics of the fuse and programming a phase-change of the fuse with the laser by direct photon absorption until a threshold transition temperature is met.
摘要翻译： 用于集成电路的激光激活相变装置包括被配置为连接第一图案化金属线和第二图案化金属线并位于层间电介质和过熔断绝缘体之间的硫族化物保险丝。 熔丝将在衬底上制造的有源半导体元件互连。 用于激活激光激活相变装置的方法包括：基于熔丝的特性来选择激光的激光状态，并通过直接光子吸收来编程与激光器的熔丝的相变直到达到阈值转变温度。
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