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1.发明授权Integrated processing system having multiple reactors connected to a central chamber 失效具有多个反应器的集成处理系统连接到中央室公开(公告)号：US06776846B2
公开(公告)日：2004-08-17
申请号：US10131243
申请日：2002-04-25
IPC分类号： C23C1600
CPC分类号： H01L21/6719 , H01J37/185 , H01L21/67069 , H01L21/67126 , H01L21/67167 , H01L21/67742 , Y10S414/141
摘要： An integrated wafer processing system having a wafer queuing station and a plurality of plasma reactors connected to peripheral walls of a central vacuum chamber. Vacuum valves separate the central chamber from the queuing station and the plasma reactors. A wafer transfer arm capable of R-&THgr; motion can transfer wafers between the queuing station and any of the plasma reactors in either a single-step or a multi-step process.
摘要翻译： 具有晶片排队台和连接到中央真空室的周壁的多个等离子体反应器的集成晶片处理系统。 真空阀将中央室与排队台和等离子体反应器分开。 能够进行R-θ运动的晶片传送臂可以在单步或多步骤过程中在排队台和任何等离子体反应器之间传送晶片。
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2.发明申请公开(公告)号：US20120111838A1
公开(公告)日：2012-05-10
申请号：US13347618
申请日：2012-01-10
IPC分类号： H01L21/324 , B23K26/08 , B23K26/12 , B23K26/00
CPC分类号： B23K26/0608 , B23K26/073 , B23K26/082 , B23K26/083 , H01L21/268
摘要： Provided are apparatuses and method for the thermal processing of a substrate surface, e.g., controlled laser thermal annealing (LTA) of substrates. The invention typically involves irradiating the substrate surface with first and second images to process regions of the substrate surface at a substantially uniform peak processing temperature along a scan path. A first image may serve to effect spike annealing of the substrates while another may be used to provide auxiliary heat treatment to the substrates before and/or after the spike annealing. Control over the temperature profile of the prespike and/or postspike may also reduce stresses and strains generated in the wafers. Also provided are microelectronic devices formed using the inventive apparatuses and methods.
摘要翻译： 提供了用于衬底表面的热处理的装置和方法，例如衬底的受控激光热退火（LTA）。 本发明通常包括用基板表面照射第一和第二图像，以沿着扫描路径的基本均匀的峰值处理温度处理基板表面的区域。 第一图像可以用于实现基板的尖峰退火，而另一个可以用于在尖峰退火之前和/或之后向基板提供辅助热处理。 控制预压和/或后刺的温度分布也可以减少在晶片中产生的应力和应变。 还提供了使用本发明的装置和方法形成的微电子器件。
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3.发明申请Thermal Processing of Substrates with Pre- and Post-Spike Temperature Control 审中-公开具有前后穗温度控制的基板的热处理公开(公告)号：US20110298093A1
公开(公告)日：2011-12-08
申请号：US13210310
申请日：2011-08-15
IPC分类号： H01L21/324 , H01L29/02
CPC分类号： B23K26/0608 , B23K26/073 , B23K26/082 , B23K26/083 , H01L21/268
摘要： Provided are apparatuses and method for the thermal processing of a substrate surface, e.g., controlled laser thermal annealing (LTA) of substrates. The invention typically involves irradiating the substrate surface with first and second images to process regions of the substrate surface at a substantially uniform peak processing temperature along a scan path. A first image may serve to effect spike annealing of the substrates while another may be used to provide auxiliary heat treatment to the substrates before and/or after the spike annealing. Control over the temperature profile of the prespike and/or postspike may also reduce stresses and strains generated in the wafers. Also provided are microelectronic devices formed using the inventive apparatuses and methods.
摘要翻译： 提供了用于衬底表面的热处理的装置和方法，例如衬底的受控激光热退火（LTA）。 本发明通常包括用基板表面照射第一和第二图像，以沿着扫描路径的基本均匀的峰值处理温度处理基板表面的区域。 第一图像可以用于实现基板的尖峰退火，而另一个可以用于在尖峰退火之前和/或之后向基板提供辅助热处理。 控制预压和/或后刺的温度分布也可以减少在晶片中产生的应力和应变。 还提供了使用本发明的装置和方法形成的微电子器件。
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公开(公告)号：US6103055A
公开(公告)日：2000-08-15
申请号：US502860
申请日：1995-07-14
IPC分类号： B65G49/07 , H01L21/00 , H01L21/677
CPC分类号： H01L21/67167 , H01L21/67069 , H01L21/67126 , H01L21/67742 , H01L21/67745
摘要： A substrate processing system is provided that includes substrate processing vessels, a substrate queuing station, a substrate transfer device, and a processor. The processor, in communication with the processing vessels, the queuing station, and the transfer device, provides selectable single and multi-step processing of the substrates by accessing a process command for a given substrate corresponding to desired processing of the substrate.
摘要翻译： 提供了一种基板处理系统，其包括基板处理容器，基板排队台，基板传送装置和处理器。 与处理容器，排队站和传送装置通信的处理器通过访问对应于衬底的期望处理的给定衬底的处理命令来提供对衬底的可选择的单步和多步处理。
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5.发明授权Systems for and methods of laser-enhanced plasma processing of semiconductor materials 有权半导体材料激光等离子体加工的系统和方法公开(公告)号：US08796151B2
公开(公告)日：2014-08-05
申请号：US13438865
申请日：2012-04-04
IPC分类号： H01L21/302
CPC分类号： H01J37/32339 , H01J37/32082 , H01L21/02046 , H01L21/268 , H01L21/3065 , H01L21/67115
摘要： Systems for and methods of laser-enhanced plasma processing of semiconductor materials are disclosed. The method includes supporting a semiconductor material in a processing chamber interior and subjecting the semiconductor material to a plasma process. The method also includes simultaneously heating the wafer surface with a laser beam through a window in the processing chamber to increase the reaction rate of the plasma process. Other methods include performing laser heating of the semiconductor material before or after the plasma process but while the semiconductor material resides in the same chamber interior.
摘要翻译： 公开了半导体材料的激光增强等离子体处理的系统和方法。 该方法包括将半导体材料支撑在处理室内部并对半导体材料进行等离子体处理。 该方法还包括通过处理室中的窗口同时用激光束加热晶片表面以增加等离子体处理的反应速率。 其他方法包括在等离子体处理之前或之后对半导体材料进行激光加热，但半导体材料位于相同的室内。
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6.发明授权Integrated processing system having multiple reactors connected to a central chamber 失效具有多个反应器的集成处理系统连接到中央室公开(公告)号：US06413320B2
公开(公告)日：2002-07-02
申请号：US09782938
申请日：2001-02-13
IPC分类号： H01L2102
CPC分类号： H01L21/6719 , H01J37/185 , H01L21/67069 , H01L21/67126 , H01L21/67167 , H01L21/67742 , Y10S414/141
摘要： An integrated wafer processing system having a wafer queuing station and a plurality of plasma reactors connected to peripheral walls of a central vacuum chamber. Vacuum valves separate the central chamber from the queuing station and the plasma reactors. A wafer transfer arm capable of R-&THgr; motion can transfer wafers between the queuing station and any of the plasma reactors in either a single-step or a multi-step process.
摘要翻译： 具有晶片排队台和连接到中央真空室的周壁的多个等离子体反应器的集成晶片处理系统。 真空阀将中央室与排队台和等离子体反应器分开。 具有R-＆THgr的晶片传送臂 运动可以在单步或多步骤过程中在排队台和任何等离子体反应器之间传送晶片。
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7.发明授权Vacuum substrate processing system having multiple processing chambers and a central load/unload chamber 失效具有多个处理室和中央负载/卸载室的真空基板处理系统公开(公告)号：US06214119B1
公开(公告)日：2001-04-10
申请号：US09195749
申请日：1998-11-18
IPC分类号： C23C1600
CPC分类号： H01L21/6719 , H01J37/185 , H01L21/67069 , H01L21/67126 , H01L21/67167 , H01L21/67742 , Y10S414/141
摘要： The present invention includes plural plasma processing vessels and a wafer queuing station arrayed with a wafer transfer arm in a controlled environment. Wafers are movable within the controlled environment one at a time selectably between the several plasma vessels and the wafer queuing station without atmospheric or other exposure so that possible contamination of the moved wafers is prevented. The system is selectively operative in either single-step or multiple-step processing modes, and in either of the modes, the several plasma etching vessels are operable to provide a desirably high system throughput. In the preferred embodiment, the several plasma vessels and the queuing station are arrayed about a closed pentagonal locus with the wafer transfer arm disposed within the closed locus. The wafer transfer arm is movable in R and &THgr; between the several plasma etching vessels and the wafer queuing station, and selectably actuatable vacuum locks are provided between each of the plasma etching vessels and the R and &THgr; movable wafer transfer arm to both maintain an intended atmospheric condition and to allow wafer transport therethrough. The plasma vessels each include first and second water-cooled electrodes that are movable relatively to each other so as to provide a selectable gap dimension therebetween. One of the electrodes includes a selectively movable pedestal portion slidably mounted thereto that is cooperative with the R and &THgr; movable wafer transfer arm to load and unload wafers respectively into and out of the associated plasma vessel. The wafer transfer arm is operative to pick-up the wafers by back-side and peripheral wafer contact only, which therewith prevents possible front-side contact-induced contamination of the wafer surfaces. A sensor on the transfer arm is operative to provide a signal indication of proper wafer seating.
摘要翻译： 本发明包括多个等离子体处理容器和在受控环境中排列有晶片传送臂的晶片排队台。 晶片可以在受控环境内一次性地选择性地在几个等离子体容器和晶片排队台之间可选地没有大气或其他暴露，从而防止移动的晶片的可能的污染。 该系统选择性地以单步或多步处理模式操作，并且在任一模式中，几个等离子体蚀刻容器可操作以提供期望的高系统吞吐量。 在优选实施例中，几个等离子体容器和排队台围绕封闭的五边形轨迹排列，其中晶片传送臂设置在闭合轨迹内。 晶圆传送臂可在R和＆ 在等离子体蚀刻容器和晶片排队台之间，并且可选择地致动的真空锁提供在每个等离子体蚀刻容器与R和＆ 可移动晶片传送臂保持预期的大气条件并允许晶片从其中传输。 等离子体容器各自包括可相对于彼此移动的第一和第二水冷电极，以便在它们之间提供可选择的间隙尺寸。 其中一个电极包括可滑动地安装在其上的与R和＆amp; 可移动的晶片传送臂将晶片分别装入和卸载相关联的等离子体容器。 晶片传送臂可操作用于仅通过背面和外围晶片接触来拾取晶片，从而防止晶片表面的可能的前侧接触引起的污染。 传送臂上的传感器可操作以提供适当的晶片座位的信号指示。
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公开(公告)号：US4473435A
公开(公告)日：1984-09-25
申请号：US477961
申请日：1983-03-23
IPC分类号： H01L21/3213 , H01L21/30 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/32137
摘要： Method and apparatus for masked etching of a polysilicon surface layer or film to expose a dielectric underlying layer or film on a semiconductor material using ion bombardment from an ionized mixture of a fluorine based gas with a chlorine or bromine containing gas. A particularly useful gas is a mixture of sulfur hexafluoride and Freon 115 gases (C.sub.2 ClF.sub.5). The mixture of gases achieves the result of highly selective etching through the polysilicon film without significantly attacking the underlying dielectric film and without significant undercutting in the polysilicon film or etching of the masking layer.
摘要翻译： 使用离子轰击氟基气体与含氯或溴的气体的离子轰击，多晶硅表面层或膜的掩模蚀刻以暴露半导体材料上的介电层或膜的方法和装置。 特别有用的气体是六氟化硫和氟利昂115气体（C2ClF5）的混合物。 气体混合物实现了通过多晶硅膜的高度选择性蚀刻的结果，而不显着攻击下面的电介质膜，并且在多晶硅膜中没有显着的底切或蚀刻掩模层。
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公开(公告)号：USD275032S
公开(公告)日：1984-08-07
申请号：US337373
申请日：1982-01-06
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10.发明申请Systems for and methods of laser-enhanced plasma processing of semiconductor materials 有权半导体材料激光等离子体加工的系统和方法公开(公告)号：US20130267096A1
公开(公告)日：2013-10-10
申请号：US13438865
申请日：2012-04-04
IPC分类号： H01L21/302 , H01L21/31 , B23K9/00
CPC分类号： H01J37/32339 , H01J37/32082 , H01L21/02046 , H01L21/268 , H01L21/3065 , H01L21/67115
摘要： Systems for and methods of laser-enhanced plasma processing of semiconductor materials are disclosed. The method includes supporting a semiconductor material in a processing chamber interior and subjecting the semiconductor material to a plasma process. The method also includes simultaneously heating the wafer surface with a laser beam through a window in the processing chamber to increase the reaction rate of the plasma process. Other methods include performing laser heating of the semiconductor material before or after the plasma process but while the semiconductor material resides in the same chamber interior.
摘要翻译： 公开了半导体材料的激光增强等离子体处理的系统和方法。 该方法包括将半导体材料支撑在处理室内部并对半导体材料进行等离子体处理。 该方法还包括通过处理室中的窗口同时用激光束加热晶片表面以增加等离子体处理的反应速率。 其他方法包括在等离子体处理之前或之后对半导体材料进行激光加热，但半导体材料位于相同的室内。
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