公开(公告)号：US20070138573A1

公开(公告)日：2007-06-21

申请号：US11565913

申请日：2006-12-01

申请人： Keiichiro KASHIHARA ,  Tomonori Okudaira ,  Tadashi Yamaguchi ,  Atsushi Ishinaga ,  Kenshi Kanegae ,  Akihiko Tsuzumitani

发明人： Keiichiro KASHIHARA ,  Tomonori Okudaira ,  Tadashi Yamaguchi ,  Atsushi Ishinaga ,  Kenshi Kanegae ,  Akihiko Tsuzumitani

IPC分类号： H01L29/76 ,  H01L21/336

CPC分类号： H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

摘要： A semiconductor device according to the present invention comprises a silicon substrate, a gate electrode formed on a main surface of the silicon substrate with a gate insulation film therethrough, a sidewall spacer formed so as to cover a side surface of the gate electrode and including at least two layers of a silicon oxide film as a lowermost layer and a silicon nitride film formed thereon, a source region and a drain region formed in the main surface of the silicon substrate so as to sandwich the gate electrode, a protection film formed so as to cover an end surface of the silicon oxide film without extending below said silicon nitride film, the end surface being on a side of said source region and said drain region, and a metal silicide layer formed in the source region and the drain region on a side of said protection film away from said gate electrode.

摘要翻译： 根据本发明的半导体器件包括硅衬底，在硅衬底的主表面上形成有栅绝缘膜的栅电极，形成为覆盖栅电极的侧表面的侧壁间隔件， 至少两层作为最下层的氧化硅膜和形成在其上的氮化硅膜，在硅衬底的主表面中形成的源极区和漏极区，以便夹着栅电极，保护膜形成为 为了覆盖氧化硅膜的端面而不延伸到所述氮化硅膜的下方，所述端面位于所述源极区域和所述漏极区域的一侧，以及形成在所述源极区域和所述漏极区域中的金属硅化物层 所述保护膜的一侧远离所述栅电极。

公开(公告)号：US06861375B1

公开(公告)日：2005-03-01

申请号：US09640519

申请日：2000-08-17

申请人： Hiroaki Nakaoka ,  Atsushi Ishinaga ,  Hiroko Kubo

发明人： Hiroaki Nakaoka ,  Atsushi Ishinaga ,  Hiroko Kubo

IPC分类号： H01L29/78 ,  H01L21/314 ,  H01L21/318 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L21/31

CPC分类号： H01L29/6659 ,  H01L21/3144 ,  H01L29/6656

摘要： A silicon oxynitride film is formed on a substrate. Then, a heat treatment is performed, while keeping a surface of the silicon oxynitride film in contact with a gas containing nitrogen, such as an NO gas, to introduce at least nitrogen into the silicon oxynitride film and produce a steeply sloped distribution of nitrogen. A semiconductor film containing an impurity, such as an amorphous silicon film, is formed on the silicon oxynitride film. By forming a CMOS device with, in particular, a dual gate structure which comprises p-type and n-type MIS transistors each having a gate oxide film composed of the silicon oxynitride film and a gate electrode composed of a polysilicon film, a high driving force is provided, while boron penetration in the p-type MIS transistor is suppressed.

摘要翻译： 在基板上形成氧氮化硅膜。 然后，进行热处理，同时保持氮氧化硅膜的表面与含氮气体（例如NO气体）接触，以将至少氮气引入氮氧化硅膜中，并产生急剧倾斜的氮分布。 在氮氧化硅膜上形成含有杂质的半导体膜，例如非晶硅膜。 通过形成具有特别是包括p型和n型MIS晶体管的双栅结构的CMOS器件，每个具有由氧氮化硅膜构成的栅极氧化膜和由多晶硅膜构成的栅电极，高驱动 而p型MIS晶体管中的硼渗透被抑制。