公开(公告)号：US06861375B1

公开(公告)日：2005-03-01

申请号：US09640519

申请日：2000-08-17

申请人： Hiroaki Nakaoka ,  Atsushi Ishinaga ,  Hiroko Kubo

发明人： Hiroaki Nakaoka ,  Atsushi Ishinaga ,  Hiroko Kubo

IPC分类号： H01L29/78 ,  H01L21/314 ,  H01L21/318 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L21/31

CPC分类号： H01L29/6659 ,  H01L21/3144 ,  H01L29/6656

摘要： A silicon oxynitride film is formed on a substrate. Then, a heat treatment is performed, while keeping a surface of the silicon oxynitride film in contact with a gas containing nitrogen, such as an NO gas, to introduce at least nitrogen into the silicon oxynitride film and produce a steeply sloped distribution of nitrogen. A semiconductor film containing an impurity, such as an amorphous silicon film, is formed on the silicon oxynitride film. By forming a CMOS device with, in particular, a dual gate structure which comprises p-type and n-type MIS transistors each having a gate oxide film composed of the silicon oxynitride film and a gate electrode composed of a polysilicon film, a high driving force is provided, while boron penetration in the p-type MIS transistor is suppressed.

摘要翻译： 在基板上形成氧氮化硅膜。 然后，进行热处理，同时保持氮氧化硅膜的表面与含氮气体（例如NO气体）接触，以将至少氮气引入氮氧化硅膜中，并产生急剧倾斜的氮分布。 在氮氧化硅膜上形成含有杂质的半导体膜，例如非晶硅膜。 通过形成具有特别是包括p型和n型MIS晶体管的双栅结构的CMOS器件，每个具有由氧氮化硅膜构成的栅极氧化膜和由多晶硅膜构成的栅电极，高驱动 而p型MIS晶体管中的硼渗透被抑制。

公开(公告)号：US06800512B1

公开(公告)日：2004-10-05

申请号：US09662004

申请日：2000-09-14

申请人： Kazuichiro Itonaga ,  Akihiro Yamamoto ,  Hiroaki Nakaoka ,  Isao Miyanaga ,  Yoshinao Harada

发明人： Kazuichiro Itonaga ,  Akihiro Yamamoto ,  Hiroaki Nakaoka ,  Isao Miyanaga ,  Yoshinao Harada

IPC分类号： H01L2100

CPC分类号： H01L21/31654 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/28247 ,  H01L21/31662 ,  H01L21/32 ,  H01L21/32105 ,  H01L21/76224 ,  H01L21/823842 ,  H01L21/823857

摘要： With keeping an atmosphere including oxygen within a chamber and with a wafer kept at a low temperature, plasma generated within the chamber is biased toward the wafer, and the wafer is subjected to the plasma. A semiconductor layer exposed on the wafer is oxidized into an oxide film. Thus, an oxide film can be formed even at room temperature differently from thermal oxidation. This oxidation is applicable to recovery of an implantation protection insulating film having been etched in cleaning a photoresist film, relaxation of a step formed between polysilicon films, relaxation of a step formed within trench and the like. Also, before removing a photoresist film used for forming a gate electrode including a metal, a contamination protection film can be formed by this oxidation with the photoresist film kept.

摘要翻译： 通过在室内保持包括氧的气氛，并且将晶片保持在低温下，在室内产生的等离子体朝向晶片偏置，并且晶片经受等离子体。 暴露在晶片上的半导体层被氧化成氧化膜。 因此，即使在室温下也可以形成与热氧化不同的氧化膜。 该氧化适用于在清洁光致抗蚀剂膜时蚀刻的注入保护绝缘膜的恢复，多晶硅膜之间形成的台阶的松弛，沟槽内形成的台阶的松弛等。 此外，在去除用于形成包括金属的栅电极的光致抗蚀剂膜之前，可以通过保持光致抗蚀剂膜的这种氧化来形成污染保护膜。

公开(公告)号：US5780898A

公开(公告)日：1998-07-14

申请号：US856697

申请日：1997-05-15

申请人： Tokuhiko Tamaki ,  Tatsuo Sugiyama ,  Hiroaki Nakaoka

发明人： Tokuhiko Tamaki ,  Tatsuo Sugiyama ,  Hiroaki Nakaoka

IPC分类号： H01L21/8238 ,  H01L27/092 ,  H01L29/76 ,  H01L29/74 ,  H01L31/062

CPC分类号： H01L21/82385 ,  H01L21/823885 ,  H01L27/0922

摘要： On a semiconductor substrate made of p-type silicon, there are formed, in a successively layered fashion, a first p-type silicon semiconductor layer, laterally paired first n-type silicon semiconductor layers, laterally paired second p-type silicon semiconductor layers, and laterally paired n-type silicon semiconductor layers, by an epitaxial growth method. On the second n-type silicon semiconductor layer on the right side, there are successively formed a third p-type silicon semiconductor layer, a third n-type silicon semiconductor layer and a fourth p-type silicon semiconductor layer. The left first n-type silicon semiconductor layer, left second p-type silicon semiconductor layer and left second n-type silicon semiconductor layer form a first insular multilayered portion forming an n-channel MOSFET. The third p-type silicon semiconductor layer, third n-type silicon semiconductor layer and fourth p-type silicon semiconductor layer form a second insular portion forming a p-channel MOSFET. A first gate electrode is formed on a side surface of the left second p-type silicon semiconductor layer with a gate insulating film therebetween, and a second gate electrode is formed on a side surface of the right third n-type silicon semiconductor layer with a gate insulating film therebetween.

摘要翻译： 在由p型硅制成的半导体衬底上，以连续分层的方式形成第一p型硅半导体层，横向配对的第一n型硅半导体层，横向配对的第二p型硅半导体层， 和横向配对的n型硅半导体层，通过外延生长法。 在右侧的第二n型硅半导体层上，依次形成第三p型硅半导体层，第三n型硅半导体层和第四p型硅半导体层。 左第一n型硅半导体层，左第二p型硅半导体层和左第二n型硅半导体层形成形成n沟道MOSFET的第一岛状多层部分。 第三p型硅半导体层，第三n型硅半导体层和第四p型硅半导体层形成形成p沟道MOSFET的第二岛形部分。 第一栅电极形成在左第二p型硅半导体层的侧表面上，栅极绝缘膜之间，第二栅电极形成在右第三n型硅半导体层的侧表面上， 栅绝缘膜。

公开(公告)号：US5409847A

公开(公告)日：1995-04-25

申请号：US141727

申请日：1993-10-27

申请人： Mizuki Segawa ,  Yoshiaki Kato ,  Hiroaki Nakaoka ,  Takashi Nakabayashi ,  Atsushi Hori ,  Hiroshi Masuda ,  Ichiro Matsuo ,  Akihira Shinohara ,  Takashi Uehara ,  Mitsuo Yasuhira

发明人： Mizuki Segawa ,  Yoshiaki Kato ,  Hiroaki Nakaoka ,  Takashi Nakabayashi ,  Atsushi Hori ,  Hiroshi Masuda ,  Ichiro Matsuo ,  Akihira Shinohara ,  Takashi Uehara ,  Mitsuo Yasuhira

IPC分类号： H01L21/8238 ,  H01L21/265

CPC分类号： H01L21/823814 ,  Y10S148/147

摘要： Gate electrodes of an N-channel transistor and a P-channel transistor are formed on a semiconductor substrate with a gate insulator therebetween. After conducting a first thermal treatment to the gate electrodes, N-type heavily doped diffusion layers to be a source or a drain of the N-channel transistor are formed using the gate electrode of the N-channel transistor as a mask. After conducting a second thermal treatment to the N-type heavily doped diffusion layers at a lower temperature than that of the first thermal treatment, P-type heavily doped diffusion layers to be a source or a drain of the P-channel transistor are formed using the gate electrode of the P-channel transistor as a mask. Then, a third thermal treatment is conducted to the P-type heavily doped diffusion layers at a lower temperature than that of the second thermal treatment.

摘要翻译： N沟道晶体管和P沟道晶体管的栅电极形成在半导体衬底上，栅极绝缘体在其间。 在对栅电极进行第一热处理之后，使用N沟道晶体管的栅电极作为掩模来形成作为N沟道晶体管的源极或漏极的N型重掺杂扩散层。 在比第一热处理的温度低的情况下对N型重掺杂扩散层进行第二次热处理之后，使用P型重掺杂扩散层作为P沟道晶体管的源极或漏极，形成为使用 P沟道晶体管的栅电极作为掩模。 然后，在比第二热处理的温度低的温度下对P型重掺杂扩散层进行第三次热处理。

公开(公告)号：US07033874B2

公开(公告)日：2006-04-25

申请号：US10863285

申请日：2004-06-09

申请人： Kazuichiro Itonaga ,  Akihiro Yamamoto ,  Hiroaki Nakaoka ,  Isao Miyanaga ,  Yoshinao Harada

发明人： Kazuichiro Itonaga ,  Akihiro Yamamoto ,  Hiroaki Nakaoka ,  Isao Miyanaga ,  Yoshinao Harada

IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L21/302 ,  H01L21/461 ,  H01L21/31

CPC分类号： H01L21/31654 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/28247 ,  H01L21/31662 ,  H01L21/32 ,  H01L21/32105 ,  H01L21/76224 ,  H01L21/823842 ,  H01L21/823857

摘要： With keeping an atmosphere including oxygen within a chamber and with a wafer kept at a low temperature, plasma generated within the chamber is biased toward the wafer, and the wafer is subjected to the plasma. A semiconductor layer exposed on the wafer is oxidized into an oxide film. Thus, an oxide film can be formed even at room temperature differently from thermal oxidation. This oxidation is applicable to recovery of an implantation protection insulating film having been etched in cleaning a photoresist film, relaxation of a step formed between polysilicon films, relaxation of a step formed within a trench and the like. Also, before removing a photoresist film used for forming a gate electrode including a metal, a contamination protection film can be formed by this oxidation with the photoresist film kept.

摘要翻译： 通过在室内保持包括氧的气氛，并且将晶片保持在低温下，在室内产生的等离子体朝向晶片偏置，并且晶片经受等离子体。 暴露在晶片上的半导体层被氧化成氧化膜。 因此，即使在室温下也可以形成与热氧化不同的氧化膜。 该氧化适用于在清洁光致抗蚀剂膜时蚀刻的注入保护绝缘膜的回收，多晶硅膜之间形成的台阶的松弛，沟槽内形成的台阶的松弛等。 此外，在去除用于形成包括金属的栅电极的光致抗蚀剂膜之前，可以通过保持光致抗蚀剂膜的这种氧化来形成污染保护膜。

公开(公告)号：US06995415B2

公开(公告)日：2006-02-07

申请号：US10475115

申请日：2003-02-14

申请人： Hisashi Ogawa ,  Hiroaki Nakaoka ,  Atsuhiro Kajiya ,  Shin Hashimoto ,  Kyoko Egashira

发明人： Hisashi Ogawa ,  Hiroaki Nakaoka ,  Atsuhiro Kajiya ,  Shin Hashimoto ,  Kyoko Egashira

IPC分类号： H01L27/108

CPC分类号： H01L27/10852 ,  H01L27/0207 ,  H01L27/105 ,  H01L27/10894 ,  H01L27/10897

摘要： A memory cell transistor and a planar capacitor are provided in a memory region, and both transistors of a CMOS device are provided in a logic circuit region. A capacitance dielectric 15 and a plate electrode 16b of the planar capacitor are provided over a trench shared with a shallow trench isolation 12a, and the upper part of the trench is filled with the capacitance dielectric 15 and the plate electrode 16b. An n-type diffusion layer 19 that is a storage node is formed, with an end region thereof extending along one side of the upper part of the trench, to a region of the substrate overlapping with the shallow trench isolation 12a. The area of a part of the substrate functioning as a capacitor can be increased without increasing the substrate area.

摘要翻译： 存储单元晶体管和平面电容器设置在存储区域中，CMOS器件的两个晶体管都设置在逻辑电路区域中。 平面电容器的电容电介质15和平板电极16b设置在与浅沟槽隔离层12a共同的沟槽上，并且沟槽的上部填充有电容电介质15和板电极16b。 形成作为存储节点的n型扩散层19，其端部区域沿着沟槽的上部的一侧延伸到与浅沟槽隔离层12a重叠的区域。 可以增加用作电容器的基板的一部分的面积，而不增加基板面积。

公开(公告)号：US20050003621A1

公开(公告)日：2005-01-06

申请号：US10853128

申请日：2004-05-26

申请人： Hiroaki Nakaoka ,  Kentaro Nakanishi ,  Hiroyuki Umimoto ,  Atsuhiro Kajiya

发明人： Hiroaki Nakaoka ,  Kentaro Nakanishi ,  Hiroyuki Umimoto ,  Atsuhiro Kajiya

IPC分类号： H01L27/092 ,  H01L21/265 ,  H01L21/8238 ,  H01L29/78

CPC分类号： H01L21/823842

摘要： As first thermal treatment for activating an impurity injected into a gate electrode, thermal treatment at a low temperature for a long time in which boron diffusion into each crystal grain in polysilicon hardly occurs and boron diffusion in each crystal boundary occurs is performed. Next, as second thermal treatment, thermal treatment at a high temperature for a short time, such as spike annealing and flash annealing, in which impurity diffusion into each crystal grain in a polysilicon layer occurs is performed.

摘要翻译： 作为用于激活注入到栅电极中的杂质的第一热处理，进行长时间的低温热处理，其中几乎不会发生多晶硅中每个晶粒中的硼扩散，并且发生每个晶体边界中的硼扩散。 接下来，作为第二热处理，进行其中发生在多晶硅层中的每个晶粒中的杂质扩散的短时间的高温处理，例如尖峰退火和闪光退火。

公开(公告)号：US06784080B2

公开(公告)日：2004-08-31

申请号：US09840306

申请日：2001-04-24

申请人： Bunji Mizuno ,  Hiroaki Nakaoka ,  Michihiko Takase ,  Ichiro Nakayama

发明人： Bunji Mizuno ,  Hiroaki Nakaoka ,  Michihiko Takase ,  Ichiro Nakayama

IPC分类号： H01L2104

CPC分类号： H01L29/66106 ,  H01J37/32082 ,  H01J37/32192 ,  H01J37/32412 ,  H01J37/32678 ,  H01L21/2236

摘要： A semiconductor substrate and an impurity solid that comprises of impurity to be introduced to a diode formation region are held in a vacuum chamber. Inert or reactive gas is introduced into the vacuum chamber to generate plasma composed of the inert or reactive gas. A first voltage allowing the impurity solid to serve as a cathode for the plasma is applied to the said impurity solid and the said impurity solid is sputtered by ions in the plasma, thereby mixing the impurity within the said impurity solid into the plasma. A second voltage allowing a semiconductor substrate to serve as a cathode for the plasma is applied to the said semiconductor substrate, thereby directly introducing the impurity within the plasma to the surface portion of the diode formation region of the said semiconductor substrate, generating a impurity layer.

摘要翻译： 将包含待引入到二极管形成区域的杂质的半导体衬底和杂质固体保持在真空室中。 将惰性或反应性气体引入真空室以产生由惰性或反应性气体组成的等离子体。 将杂质固体用作等离子体的阴极的第一电压施加到所述杂质固体上，并且所述杂质固体被等离子体中的离子溅射，从而将所述杂质固体内的杂质混合到等离子体中。 将半导体衬底用作等离子体的阴极的第二电压被施加到所述半导体衬底，从而将等离子体内的杂质直接引入到所述半导体衬底的二极管形成区域的表面部分，产生杂质层 。

公开(公告)号：US06337500B1

公开(公告)日：2002-01-08

申请号：US09099195

申请日：1998-06-18

申请人： Hiroaki Nakaoka ,  Hiromasa Fujimoto ,  Atsushi Hori ,  Takashi Uehara ,  Takehiro Hirai

发明人： Hiroaki Nakaoka ,  Hiromasa Fujimoto ,  Atsushi Hori ,  Takashi Uehara ,  Takehiro Hirai

IPC分类号： H01L2701

CPC分类号： H01L29/78696 ,  H01L29/66772 ,  H01L29/78612 ,  H01L29/78621 ,  Y10S438/91

摘要： In a silicon layer formed on an insulator layer, a lattice defect region is formed to be adjacent to a channel region and source/drain regions, and the lower part of the channel region functions as a high-concentration channel region. The holes of hole-electron pairs generated in the channel region are eliminated by recombination in the lattice defect region, thereby suppressing the bipolar operation resulting from the accumulation of holes and increasing the source/drain breakdown voltage. The threshold value of a parasitic transistor is increased by the high-concentration channel region so as to reduce the leakage current in the OFF state. Alternatively, the holes may be moved to the source region to disappear therein by providing, instead of the lattice defect region, a high-concentration diffusion layer constituting and operating as a pn diode between the channel and source regions. Thus, it is possible to provide an SOI transistor causing no decrease in the source/drain breakdown voltage resulting from substrate floating effects and causing little OFF leakage current because of the activation of the parasitic transistor.

公开(公告)号：US06831020B2

公开(公告)日：2004-12-14

申请号：US10285660

申请日：2002-11-01

申请人： Takayuki Yamada ,  Hiroaki Nakaoka

发明人： Takayuki Yamada ,  Hiroaki Nakaoka

IPC分类号： H01L2131

CPC分类号： H01L21/823462 ,  H01L21/823481

摘要： After a first gate insulating film is formed on each of first to third active regions, the first gate insulating film on the second active region is removed therefrom and a second gate insulating film thinner than the first gate insulating film is formed on the second active region. Then, the first gate insulating film on the third active region is removed therefrom and a third gate insulating film thinner than the second gate insulating film is formed on the third active region. Otherwise, a pad oxide film on the first active region is removed therefrom and the first gate insulating film is formed on the first active region. Then, the pad oxide film on the second active region is removed therefrom and a second gate insulating film thinner than the first gate insulating film is formed on the second active region. Thereafter, the pad oxide film on the third active region is removed therefrom and a third gate insulating film thinner than the second gate insulating film is formed on the third active region.

摘要翻译： 在第一至第三有源区域中的每一个上形成第一栅极绝缘膜之后，第二有源区上的第一栅极绝缘膜被去除，并且在第二有源区上形成比第一栅极绝缘膜更薄的第二栅极绝缘膜 。 然后，去除第三有源区上的第一栅极绝缘膜，并在第三有源区上形成比第二栅极绝缘膜更薄的第三栅极绝缘膜。 否则，去除第一有源区上的衬垫氧化膜，并在第一有源区上形成第一栅极绝缘膜。 然后，除去第二有源区上的衬垫氧化膜，在第二有源区上形成比第一栅极绝缘膜薄的第二栅极绝缘膜。 此后，去除第三有源区上的焊盘氧化膜，在第三有源区上形成比第二栅绝缘膜薄的第三栅极绝缘膜。