公开(公告)号：US06861375B1

公开(公告)日：2005-03-01

申请号：US09640519

申请日：2000-08-17

申请人： Hiroaki Nakaoka ,  Atsushi Ishinaga ,  Hiroko Kubo

发明人： Hiroaki Nakaoka ,  Atsushi Ishinaga ,  Hiroko Kubo

IPC分类号： H01L29/78 ,  H01L21/314 ,  H01L21/318 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L21/31

CPC分类号： H01L29/6659 ,  H01L21/3144 ,  H01L29/6656

摘要： A silicon oxynitride film is formed on a substrate. Then, a heat treatment is performed, while keeping a surface of the silicon oxynitride film in contact with a gas containing nitrogen, such as an NO gas, to introduce at least nitrogen into the silicon oxynitride film and produce a steeply sloped distribution of nitrogen. A semiconductor film containing an impurity, such as an amorphous silicon film, is formed on the silicon oxynitride film. By forming a CMOS device with, in particular, a dual gate structure which comprises p-type and n-type MIS transistors each having a gate oxide film composed of the silicon oxynitride film and a gate electrode composed of a polysilicon film, a high driving force is provided, while boron penetration in the p-type MIS transistor is suppressed.

摘要翻译： 在基板上形成氧氮化硅膜。 然后，进行热处理，同时保持氮氧化硅膜的表面与含氮气体（例如NO气体）接触，以将至少氮气引入氮氧化硅膜中，并产生急剧倾斜的氮分布。 在氮氧化硅膜上形成含有杂质的半导体膜，例如非晶硅膜。 通过形成具有特别是包括p型和n型MIS晶体管的双栅结构的CMOS器件，每个具有由氧氮化硅膜构成的栅极氧化膜和由多晶硅膜构成的栅电极，高驱动 而p型MIS晶体管中的硼渗透被抑制。

公开(公告)号：US20110086500A1

公开(公告)日：2011-04-14

申请号：US12842616

申请日：2010-07-23

申请人： Kenji Yoneda ,  Hiroko Kubo

发明人： Kenji Yoneda ,  Hiroko Kubo

IPC分类号： H01L21/266 ,  G21K1/08

CPC分类号： G21K5/04 ,  G21K5/10 ,  H01L21/266 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14689

摘要： An impurity is implanted by ion implantation into an object to be processed. The ion implantation is performed using an ion beam which is diverged after being temporarily converged.

摘要翻译： 通过离子注入将杂质植入待处理物体中。 使用在暂时收敛之后发散的离子束进行离子注入。

公开(公告)号：US5772606A

公开(公告)日：1998-06-30

申请号：US397953

申请日：1995-03-03

申请人： Emi Ashibe ,  Takeshi Sakura ,  Harumi Uenoyama ,  Xu Kexin ,  Hiroko Kubo

发明人： Emi Ashibe ,  Takeshi Sakura ,  Harumi Uenoyama ,  Xu Kexin ,  Hiroko Kubo

IPC分类号： G01N21/35 ,  G01N33/483 ,  G01N33/493 ,  A61B5/00

CPC分类号： G01N33/493 ,  G01N21/359

摘要： A urinal is provided on its forward end with a cell, which internally communicates with the urinal to outwardly project from the same. A measuring part comprises a light source part for applying a measuring beam of the visible or near infrared wavelength region to the cell which is set in a cell setting part and a light receiving part for receiving and detecting the measuring beam transmitted through the cell, and measures absorbances of uric components to be measured at wavelengths selected therefor respectively. A sensor part is adapted to detect that the cell is set in the cell setting part, so that the measuring part starts a measuring operation on the basis of a signal indicating that the sensor detects the cell. It is possible to carry out a urine test on a person who lies on bed.

摘要翻译： 在其前端设有一个小便器，一个细胞，其内部与小便器通信以向外突出。 测量部分包括用于将可见光或近红外波长区域的测量光束施加到设置在单元设置部分中的单元的光源部分和用于接收和检测透过单元的测量光束的光接收部分，以及 测量在分别选择的波长处测量的尿液成分的吸光度。 传感器部分适于检测单元设置在单元设置部分中，使得测量部件基于表示传感器检测到单元的信号开始测量操作。 可以对躺在床上的人进行尿检。

公开(公告)号：US20050120961A1

公开(公告)日：2005-06-09

申请号：US11005003

申请日：2004-12-07

申请人： Hiroko Kubo

发明人： Hiroko Kubo

IPC分类号： H01L21/683 ,  C23C16/00 ,  H01L21/00 ,  H01L21/26 ,  H01L21/68

CPC分类号： H01L21/67248 ,  H01L21/67109

摘要： Using a rapid thermal processing system provided with a substrate carrier supporting a substrate and having oxidation resistance, rapid thermal processing is carried out on the substrate.

摘要翻译： 使用具有支撑衬底并具有抗氧化性的衬底载体的快速热处理系统，在衬底上进行快速热处理。

公开(公告)号：US5696580A

公开(公告)日：1997-12-09

申请号：US434717

申请日：1995-05-04

申请人： Hiroko Kubo ,  Xu Kexin ,  Harumi Uenoyama

发明人： Hiroko Kubo ,  Xu Kexin ,  Harumi Uenoyama

IPC分类号： G01N21/03 ,  G01N21/41 ,  G01N21/00

CPC分类号： G01N21/4133 ,  G01N21/0303

摘要： A measuring beam is incident upon a triangular cell storing a liquid sample, and transmitted light thereof is received by a linear sensor so that both transmitted light intensity and a position of the beam are detected. A refractive index calculating part calculates refractive indices from the position detected by the linear sensor, while an absorbance calculating part calculates absorbance values dependent on component concentration values correcting influence by transmittance change at the triangular cell through the transmitted light intensity values and the refractive indices of the sample calculated at the refractive index calculating part. A component concentration calculating part performs a multivariate analytical operation on the basis of the absorbance values dependent on the component concentration values at a plurality of measuring wavelengths calculated at the absorbance calculating part.

摘要翻译： 测量光束入射在存储液体样品的三角形单元上，并且其透射光被线性传感器接收，从而检测透射光强度和光束位置。 折射率计算部分从由线性传感器检测的位置计算折射率，而吸光度计算部分通过透射光强度值和透射光强度值来计算依赖于三角形单元的透射率变化校正影响的成分浓度值的吸光度值， 在折射率计算部分计算的样本。 成分浓度计算部根据在吸光度计算部计算出的多个测定波长的成分浓度值的吸光度值，进行多变量分析。

公开(公告)号：US06969870B2

公开(公告)日：2005-11-29

申请号：US10769863

申请日：2004-02-03

申请人： Hiroko Kubo ,  Kenji Yoneda

发明人： Hiroko Kubo ,  Kenji Yoneda

IPC分类号： H01L21/28 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L29/78 ,  H01L29/04

CPC分类号： H01L29/49 ,  H01L21/2807 ,  H01L21/823842

摘要： A silicon germanium layer is deposited over a semiconductor substrate with a gate insulating film interposed between the substrate and the silicon germanium layer. Then, an upper silicon layer in an amorphous state is deposited on the silicon germanium layer. Thereafter, a gate electrode is formed by patterning the silicon germanium layer and the upper silicon layer.

摘要翻译： 在半导体衬底上沉积硅锗层，其中栅极绝缘膜置于衬底和硅锗层之间。 然后，将非晶态的上硅层沉积在硅锗层上。 此后，通过图案化硅锗层和上硅层形成栅电极。

公开(公告)号：US5615009A

公开(公告)日：1997-03-25

申请号：US630974

申请日：1996-04-12

申请人： Takeshi Sakura ,  Yutaka Yamasaki ,  Hiroko Kubo ,  Kexin Xu ,  Motonobu Shiomi

发明人： Takeshi Sakura ,  Yutaka Yamasaki ,  Hiroko Kubo ,  Kexin Xu ,  Motonobu Shiomi

IPC分类号： G01J3/28 ,  G01N21/27 ,  G01J3/42

CPC分类号： G01N21/274

摘要： A method of quantitative analysis of a specific component of an object to be measured comprises steps of measuring an energy spectrum of light transmitted through or reflected from the object, dividing the energy spectrum into a plurality of wavelength domains, thereby obtaining a plurality of partial energy spectra, normalizing the plurality of partial energy spectra within each wavelength domain using an energy measured at a predetermined wavelength contained in each wavelength domain, and performing the quantative analysis by multivariate analysis using the plurality of partial energy spectra having been normalized.

摘要翻译： 对被测量物体的特定成分进行定量分析的方法包括以下步骤：测量透过物体或通过物体反射的光的能谱，将能谱分成多个波长域，从而获得多个部分能量 光谱，使用在每个波长域中包含的预定波长测量的能量对每个波长域内的多个部分能谱进行标准化，以及使用已经被归一化的多个部分能谱通过多变量分析进行定量分析。

公开(公告)号：US06710382B2

公开(公告)日：2004-03-23

申请号：US10428920

申请日：2003-05-05

申请人： Hiroko Kubo ,  Kenji Yoneda

发明人： Hiroko Kubo ,  Kenji Yoneda

IPC分类号： H01L27148

CPC分类号： H01L29/49 ,  H01L21/2807 ,  H01L21/823842

摘要： A silicon germanium layer is deposited over a semiconductor substrate with a gate insulating film interposed between the substrate and the silicon germanium layer. Then, an upper silicon layer in an amorphous state is deposited on the silicon germanium layer. Thereafter, a gate electrode is formed by patterning the silicon germanium layer and the upper silicon layer.

摘要翻译： 在半导体衬底上沉积硅锗层，其中栅极绝缘膜置于衬底和硅锗层之间。 然后，将非晶态的上硅层沉积在硅锗层上。 此后，通过图案化硅锗层和上硅层形成栅电极。

公开(公告)号：US06451674B1

公开(公告)日：2002-09-17

申请号：US09243797

申请日：1999-02-03

申请人： Masahiko Niwayama ,  Hiroko Kubo ,  Kenji Yoneda

发明人： Masahiko Niwayama ,  Hiroko Kubo ,  Kenji Yoneda

IPC分类号： H01L21425

CPC分类号： H01L21/265 ,  H01J37/3171 ,  H01J2237/004 ,  H01J2237/31701 ,  H01L21/26513

摘要： A method for introducing an impurity includes the steps of: introducing an impurity having charges into a target to be processed, such as a semiconductor substrate and a film formed on a substrate; and supplying electrons from a filament into the target to neutralize the charges of the impurity. The step of supplying electrons includes a step of controlling the maximum energy of the electrons supplied at a predetermined energy or less.

摘要翻译： 引入杂质的方法包括以下步骤：将具有电荷的杂质引入诸如半导体衬底的被处理靶和形成在衬底上的膜; 并将电子从灯丝提供到靶中以中和杂质的电荷。 提供电子的步骤包括控制以预定能量或更少能量供应的电子的最大能量的步骤。

公开(公告)号：US06633047B2

公开(公告)日：2003-10-14

申请号：US10184939

申请日：2002-07-01

申请人： Masahiko Niwayama ,  Hiroko Kubo ,  Kenji Yoneda

发明人： Masahiko Niwayama ,  Hiroko Kubo ,  Kenji Yoneda

IPC分类号： H01J37317

CPC分类号： H01L21/265 ,  H01J37/3171 ,  H01J2237/004 ,  H01J2237/31701 ,  H01L21/26513

摘要： An impurity introducing apparatus of the present invention includes: a system for introducing an impurity having charges into a target to be processed, the target being a semiconductor substrate or a film formed on the substrate; a system for supplying electrons into the target, the electrons canceling the charges of the impurity; and a system for controlling the maximum energy of the electrons supplied by the electron supply system at a predetermined value or less.

摘要翻译： 本发明的杂质导入装置包括：将具有电荷的杂质引入被处理对象物，所述靶为半导体基板或形成在所述基板上的膜的系统; 用于向目标物质供给电子的系统，电子消除杂质的电荷; 以及用于控制由电子供给系统提供的电子的最大能量以预定值或更小的系统。