公开(公告)号：US09208812B2

公开(公告)日：2015-12-08

申请号：US13817645

申请日：2011-08-19

Applicant: Toshiyuki Sawada ,  Hiroyuki Hasegawa ,  Atsushi Kishida

Inventor： Toshiyuki Sawada ,  Hiroyuki Hasegawa ,  Atsushi Kishida

IPC: C22C19/07 ,  C23C14/34 ,  G11B5/65 ,  G11B5/667 ,  G11B5/851

CPC classification number: G11B5/656 ,  C22C19/07 ,  C23C14/3407 ,  C23C14/3414 ,  G11B5/667 ,  G11B5/851

Abstract: There is provided a soft magnetic alloy for a perpendicular magnetic recording medium having a low coercive force, high amorphous properties, high corrosion resistance, and a high hardness; and a sputtering target for producing a thin film of the alloy. The alloy comprises in at. %: 6 to 20% in total of one or two of Zr and Hf; 1 to 20% of B; and 0 to 7% in total of one or two or more of Ti, V, Nb, Ta, Cr, Mo, W, Ni, Al, Si, and P; and the balance Co and/or Fe and unavoidable impurities. The alloy further satisfies 6≦2×(Zr%+Hf%)−B%≦16 and 0≦Fe%/(Fe%+Co%)

Abstract translation: 提供了一种用于垂直磁记录介质的软磁合金，其具有低的矫顽力，高非晶性，高耐腐蚀性和高硬度; 以及用于制造合金薄膜的溅射靶。 该合金包括在。 ％：Zr和Hf中的一种或两种的总共6〜20％ B的1〜20％ Ti，V，Nb，Ta，Cr，Mo，W，Ni，Al，Si和P中的一种或两种以上为0〜7％ 余量为Co和/或Fe和不可避免的杂质。 合金进一步满足6＆nlE; 2×（Zr％+ Hf％）-B％＆nlE; 16和0＆nlE; Fe％/（Fe％+ Co％）<0.20。

公开(公告)号：US20130224067A1

公开(公告)日：2013-08-29

申请号：US13817645

申请日：2011-08-19

Applicant: Toshiyuki Sawada ,  Hiroyuki Hasegawa ,  Atsushi Kishida

Inventor： Toshiyuki Sawada ,  Hiroyuki Hasegawa ,  Atsushi Kishida

IPC: G11B5/65 ,  C23C14/34

CPC classification number: G11B5/656 ,  C22C19/07 ,  C23C14/3407 ,  C23C14/3414 ,  G11B5/667 ,  G11B5/851

Abstract: There is provided a soft magnetic alloy for a perpendicular magnetic recording medium having a low coercive force, high amorphous properties, high corrosion resistance, and a high hardness; and a sputtering target for producing a thin film of the alloy. The alloy comprises in at. %: 6 to 20% in total of one or two of Zr and Hf; 1 to 20% of B; and 0 to 7% in total of one or two or more of Ti, V, Nb, Ta, Cr, Mo, W, Ni, Al, Si, and P; and the balance Co and/or Fe and unavoidable impurities. The alloy further satisfies 6≦2×(Zr%+Hf%)−B%≦16 and 0≦Fe%/(Fe%+Co%)

Abstract translation: 提供了一种用于垂直磁记录介质的软磁合金，其具有低的矫顽力，高非晶性，高耐腐蚀性和高硬度; 以及用于制造合金薄膜的溅射靶。 该合金包括在。 ％：Zr和Hf中的一种或两种的总共6〜20％ B的1〜20％ Ti，V，Nb，Ta，Cr，Mo，W，Ni，Al，Si和P中的一种或两种以上为0〜7％ 余量为Co和/或Fe和不可避免的杂质。 该合金还满足6 @ 2×（Zr％+ Hf％）-B％@ 16和0 @ Fe％/（Fe％+ Co％）<0.20。

公开(公告)号：US20110020169A1

公开(公告)日：2011-01-27

申请号：US12934387

申请日：2009-04-30

Applicant: Toshiyuki Sawada ,  Atsushi Kishida ,  Akihiko Yanagitani

Inventor： Toshiyuki Sawada ,  Atsushi Kishida ,  Akihiko Yanagitani

IPC: C23C14/34 ,  C22C19/03

CPC classification number: G11B5/667 ,  C22C1/0433 ,  C22C19/03 ,  C22C19/058 ,  C23C14/3414 ,  G11B5/8404 ,  G11B5/851

Abstract: There is disclosed a sputtering target material for producing an intermediate layer film of a perpendicular magnetic recording medium, which is capable of dramatically reducing the crystal grain size of a thin film formed by sputtering. The sputtering target material comprises, in at %, 1 to 20% of W; 0.1 to 10% in total of one or more elements selected from the group consisting of P, Zr, Si and B; and balance Ni.

Abstract translation: 公开了一种用于制造垂直磁记录介质的中间层膜的溅射靶材料，其能够显着降低由溅射形成的薄膜的晶粒尺寸。 溅射靶材料以％计含有1％至20％的W; 总共0.1〜10％的选自P，Zr，Si和B的一种或多种元素; 并平衡Ni。

公开(公告)号：US09293166B2

公开(公告)日：2016-03-22

申请号：US12934387

申请日：2009-04-30

Applicant: Toshiyuki Sawada ,  Atsushi Kishida ,  Akihiko Yanagitani

Inventor： Toshiyuki Sawada ,  Atsushi Kishida ,  Akihiko Yanagitani

IPC: C23C14/34 ,  G11B5/667 ,  C22C1/04 ,  C22C19/03 ,  C22C19/05 ,  G11B5/84 ,  G11B5/851

CPC classification number: G11B5/667 ,  C22C1/0433 ,  C22C19/03 ,  C22C19/058 ,  C23C14/3414 ,  G11B5/8404 ,  G11B5/851

Abstract: There is disclosed a sputtering target material for producing an intermediate layer film of a perpendicular magnetic recording medium, which is capable of dramatically reducing the crystal grain size of a thin film formed by sputtering. The sputtering target material comprises, in at %, 1 to 20% of W; 0.1 to 10% in total of one or more elements selected from the group consisting of P, Zr, Si and B; and balance Ni.

Abstract translation: 公开了一种用于制造垂直磁记录介质的中间层膜的溅射靶材料，其能够显着降低由溅射形成的薄膜的晶粒尺寸。 溅射靶材料以％计含有1％至20％的W; 总共0.1〜10％的选自P，Zr，Si和B的一种或多种元素; 并平衡Ni。