公开(公告)号：US09673269B2

公开(公告)日：2017-06-06

申请号：US13225451

申请日：2011-09-04

申请人： Emmanuel Defay ,  Gwenaël Le Rhun ,  Aurélien Suhm

发明人： Emmanuel Defay ,  Gwenaël Le Rhun ,  Aurélien Suhm

IPC分类号： H01L21/02 ,  H01G4/005 ,  H01L49/02

CPC分类号： H01L28/55 ,  H01L21/02197 ,  H01L21/02282 ,  H01L28/40 ,  H01L28/65

摘要： An integrated capacitor comprises a layer of dielectric material known as functional dielectric material based on crystallized material of perovskite type, between at least one first electrode known as a bottom electrode at the surface of a substrate and at least one second electrode known as a top electrode, said electrodes being electrically insulated by a layer of electrically insulating material in order to allow at least one contact on the top electrode. The electrically insulating material is made of an amorphous dielectric material of perovskite type having a dielectric constant lower than that of the crystallized material of perovskite type. The contact is formed from an etched contacting layer in contact with the electrically insulating dielectric layer level with its surface parallel to the plane of the layers. A process for manufacturing such an integrated capacitor is also provided.

公开(公告)号：US20120056299A1

公开(公告)日：2012-03-08

申请号：US13225451

申请日：2011-09-04

申请人： Emmanuel DEFAY ,  Gwenaël LE RHUN ,  Aurélien SUHM

发明人： Emmanuel DEFAY ,  Gwenaël LE RHUN ,  Aurélien SUHM

IPC分类号： H01L29/92 ,  H01L21/02

CPC分类号： H01L28/55 ,  H01L21/02197 ,  H01L21/02282 ,  H01L28/40 ,  H01L28/65

摘要： An integrated capacitor comprises a layer of dielectric material known as functional dielectric material based on crystallized material of perovskite type, between at least one first electrode known as a bottom electrode at the surface of a substrate and at least one second electrode known as a top electrode, said electrodes being electrically insulated by a layer of electrically insulating material in order to allow at least one contact on the top electrode. The electrically insulating material is made of an amorphous dielectric material of perovskite type having a dielectric constant lower than that of the crystallized material of perovskite type. The contact is formed from an etched contacting layer in contact with the electrically insulating dielectric layer level with its surface parallel to the plane of the layers. A process for manufacturing such an integrated capacitor is also provided.

摘要翻译： 集成电容器包括被称为基于钙钛矿型结晶材料的功能介电材料的介电材料层，位于衬底表面处的称为底部电极的至少一个第一电极和称为顶部电极的至少一个第二电极 所述电极通过电绝缘材料层电绝缘，以允许顶部电极上的至少一个接触。 电绝缘材料由钙钛矿型非晶介质材料制成，其介电常数低于钙钛矿型结晶材料的介电常数。 接触由与电绝缘介电层水平面接触的蚀刻接触层形成，其表面平行于层的平面。 还提供了一种用于制造这种集成电容器的工艺。