公开(公告)号：US5225359A

公开(公告)日：1993-07-06

申请号：US812670

申请日：1991-12-23

申请人： Bancherd DeLong

发明人： Bancherd DeLong

IPC分类号： H01L29/73 ,  H01L29/872

CPC分类号： H01L29/872 ,  H01L29/7302 ,  Y10S148/009 ,  Y10S148/139

摘要： A Schottky diode is formed with a layer of intrinsic polysilicon separating a metal silicide layer from an n conductivity type active region. This structure avoids the necessity for a process step which opens a window in the intrinsic polysilicon layer and reduces the portion of surface area needed for formation of a Schottky diode, compared to previous devices. The Schottky diode can be formed as part of an overall process for forming an integrated circuit and can be positioned in parallel across the collector/base junction of a bipolar transistor to form a Schottky barrier diode-clamped transistor.

摘要翻译： 肖特基二极管形成有本征多晶硅层，其将金属硅化物层与n导电型有源区分离。 该结构避免了与先前的器件相比，在本征多晶硅层中打开窗口并减少形成肖特基二极管所需的部分表面积的工艺步骤的必要性。 肖特基二极管可以形成为用于形成集成电路的整体工艺的一部分，并且可以跨双极晶体管的集电极/基极结并联放置，以形成肖特基势垒二极管钳位晶体管。

公开(公告)号：US5139961A

公开(公告)日：1992-08-18

申请号：US503498

申请日：1990-04-02

申请人： Alan G. Solheim ,  Bamdad Bastani ,  James L. Bouknight ,  George E. Ganschow ,  Bancherd Delong ,  Rajeeva Lahri ,  Steve M. Leibiger ,  Christopher S. Blair ,  Rick C. Jerome ,  Madan Biswal ,  Tad Davies ,  Vida Ilderem ,  Ali A. Iranmanesh

发明人： Alan G. Solheim ,  Bamdad Bastani ,  James L. Bouknight ,  George E. Ganschow ,  Bancherd Delong ,  Rajeeva Lahri ,  Steve M. Leibiger ,  Christopher S. Blair ,  Rick C. Jerome ,  Madan Biswal ,  Tad Davies ,  Vida Ilderem ,  Ali A. Iranmanesh

IPC分类号： H01L29/73 ,  H01L21/285 ,  H01L21/32 ,  H01L21/331 ,  H01L21/762 ,  H01L29/732

CPC分类号： H01L29/6628 ,  H01L21/28525 ,  H01L21/32 ,  H01L21/76205 ,  H01L29/732 ,  Y10S148/01

摘要： A high performance bipolar transistor and a method of fabrication. Base resistance is reduced by a self-aligned silicide formed in the single-crystal region of the extrinsic base, thereby eliminating the polysilicon to single-crystal contact resistance as well as shunting the resistance of the single-crystal extrinsic base region. Oxide from the sidewall of the polysilicon local interconnection is selectively removed prior to silicide formation. Therefore, selected sidewalls of the poly interconnect layer also becomes silicided. This results in significant reductions in resistance of the interconnection, particularly for sub-micron geometries. Improved techniques for forming field oxide regions and for forming base regions of bipolar transistors are also disclosed.

公开(公告)号：US5045483A

公开(公告)日：1991-09-03

申请号：US503340

申请日：1990-04-02

申请人： Bancherd DeLong ,  Christopher S. Blair ,  George E. Ganschow ,  Thomas S. Crabb

发明人： Bancherd DeLong ,  Christopher S. Blair ,  George E. Ganschow ,  Thomas S. Crabb

IPC分类号： H01L21/02 ,  H01L21/285 ,  H01L21/331

CPC分类号： H01L28/20 ,  H01L21/28525 ,  H01L29/66272 ,  H01L29/6628 ,  Y10S148/123

摘要： A bipolar transistor and resistor are provided. Fabrication includes using a high temperature oxide to form sidewall spacers for the transistor contacts and/or to overlay the resistor portion of the device. Deposition of the HTO is combined with dopant drive-in so that fewer total steps are required. The process is compatible with MOS technology so that the bipolar transistor and resistor can be formed on a substrate along with MOS devices.