公开(公告)号：US5798301A

公开(公告)日：1998-08-25

申请号：US841030

申请日：1997-04-29

申请人： Pei-Ing Paul Lee ,  Bernd Vollmer ,  Darryl Restaino ,  Bill Klaasen

发明人： Pei-Ing Paul Lee ,  Bernd Vollmer ,  Darryl Restaino ,  Bill Klaasen

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L21/283

CPC分类号： H01L21/76843 ,  H01L21/28512 ,  H01L21/7685 ,  H01L21/76877 ,  H01L23/53223 ,  H01L2924/0002

摘要： A multilayer interconnect structure for a semiconductor integrated circuit comprising a base layer of titanium, a second layer of titanium nitride, a third layer of an aluminum alloy and a top layer of titanium nitride. All of the layers contained within the multilayer interconnect structure are deposited by in-situ deposition in an ultra-high vacuum deposition system. The different layers deposited in the deposition system are conducted consecutively without a disruption to the vacuum. Although each layer in the multilayer interconnect structure are deposited within the integrated ultra-high vacuum deposition system, with multiple deposition chambers, the deposition of the different layers is conducted at different temperatures. The time to the electromigration failure of the multilayer interconnect structure, caused by the electromigration of the aluminum alloy, is greatly increased by depositing the aluminum alloy layer at a temperature in excess of 300.degree. C. and preferably between 350.degree. C. and 550.degree. C. The titanium layer and the adjacent titanium nitride layer below the aluminum alloy layer provide the interconnect structure with low resistivity and prevent alloy spiking of the base substrate. As a result, a multilayer interconnect structure provided that has improved electromigration reliability and a low resistance, thereby enabling more dense applications within an integrated circuit.

摘要翻译： 一种用于半导体集成电路的多层互连结构，包括钛基底层，第二氮化钛层，第三层铝合金和顶层氮化钛。 包含在多层互连结构内的所有层通过原位沉积沉积在超高真空沉积系统中。 沉积在沉积系统中的不同层连续进行，而不会破坏真空。 尽管多层互连结构中的每个层都沉积在具有多个沉积室的集成超高真空沉积系统内，但不同层的沉积在不同的温度下进行。 通过在超过300℃，优选350℃至550℃的温度下沉积铝合金层，由铝合金的电迁移引起的多层互连结构的电迁移故障的时间大大增加。 C.在铝合金层下面的钛层和相邻的氮化钛层提供具有低电阻率的互连结构并防止基底衬底的合金尖峰。 结果，提供了具有改善的电迁移可靠性和低电阻的多层互连结构，从而使集成电路内的应用更加密集。

公开(公告)号：US20110014578A1

公开(公告)日：2011-01-20

申请号：US12864336

申请日：2009-02-10

申请人： Andreas Rohde ,  Christian Bergins ,  Friedrich Klauke ,  Martin Ehmann ,  Thorsten Buddenberg ,  Bernd Vollmer ,  Thomas Krause ,  Alfred Gwosdz

发明人： Andreas Rohde ,  Christian Bergins ,  Friedrich Klauke ,  Martin Ehmann ,  Thorsten Buddenberg ,  Bernd Vollmer ,  Thomas Krause ,  Alfred Gwosdz

IPC分类号： F23N5/00

CPC分类号： F23J15/006 ,  F22B1/18 ,  F23C9/003 ,  F23L7/007 ,  F23L2900/07007 ,  Y02E20/328 ,  Y02E20/344

摘要： In a method for operating and controlling/regulating a power station comprising a coal-fired steam generator (11), the steam generator (11) of which is rated for the steam parameters achievable by the heat transfer onto the steam mass flow upon coal firing in the steam generator (11) carried out using combustion air, a solution is to be created, which enables the operation of coal-fired power stations rated for air operation utilizing a firing of the fuel carried out according to the oxy-fuel process in the firing chamber of the steam generator of the coal-fired power station. This is achieved in that a firing of the fuel containing coal is carried out in the steam generator (11) according to the oxy-fuel process utilizing approximately pure oxygen containing more than 95% by volume, and recirculated flue gas containing a high amount of CO2, such that the mass flows of all fuel flows supplied to the coal-fired burners (10) and to the steam generator (11), and the combustion gas, carrier gas, and process gas flows from the combustion oxygen and/or recirculated flue gas are configured and adjusted to each other with respect to the respective composition ratio thereof of oxygen and/or flue gas such that the heat transfer occurring in the steam generator by means of flame radiation, gas radiation, and convection onto the steam mass flow is maintained equal overall in the steam/water cycle as compared to air combustion, in particular, that the same steam parameters are obtained.

摘要翻译： 在一种用于操作和控制/调节包括燃煤蒸汽发生器（11）的发电站的方法中，其蒸汽发生器（11）的额定值是通过在煤燃烧时向蒸汽质量流量传热而实现的蒸汽参数 在使用燃烧空气进行的蒸汽发生器（11）中，将产生一种解决方案，这使得能够利用根据氧燃料过程进行的燃料的燃烧来对额定空气运行的燃煤发电站进行操作 燃煤电站蒸汽发生器的燃烧室。 这是通过使用大于95体积％的大约纯氧的氧 - 燃料工艺在蒸汽发生器（11）中进行含燃料燃料的燃烧，并且含有大量 CO 2，使得供应到燃煤燃烧器（10）和蒸汽发生器（11）的所有燃料流的质量流量，并且燃烧气体，载气和处理气体从燃烧氧气和/或再循环 烟道气相对于氧气和/或烟气的相应组成比相互配置和调节，使得通过火焰辐射，气体辐射和蒸汽质量流中的对流在蒸汽发生器中发生的热传递 与空气燃烧相比，在蒸汽/水循环中总体维持相等，特别是获得相同的蒸汽参数。

公开(公告)号：US06300235B1

公开(公告)日：2001-10-09

申请号：US08884861

申请日：1997-06-30

申请人： Klaus Feldner ,  Virinder Grewal ,  Bernd Vollmer ,  Rainer Florian Schnabel

发明人： Klaus Feldner ,  Virinder Grewal ,  Bernd Vollmer ,  Rainer Florian Schnabel

IPC分类号： H01L2144

CPC分类号： H01L21/76808

摘要： An improved method of performing a dual damascene etch through a layer stack disposed above a substrate. The layer stack includes an underlying device layer and an insulating layer disposed above the underlying device layer. The method includes forming a trench in a top surface of the insulating layer such that the trench is positioned over the underlying device layer and separated therefrom by insulating material at a bottom of the trench. The method also includes, depositing flowable oxide over the top surface of the insulating layer and into the trench followed by planarizing the flowable oxide down to about a level of the top surface of the insulating layer. Further, the method includes, etching through the flowable oxide within the trench and through insulating material at the bottom of the trench down to the underlying device layer to form a via.

摘要翻译： 通过设置在衬底上方的层堆栈执行双镶嵌蚀刻的改进方法。 层叠层包括下层器件层和设置在下层器件层上方的绝缘层。 该方法包括在绝缘层的顶表面中形成沟槽，使得沟槽位于下面的器件层上方并且通过沟槽底部的绝缘材料与其隔开。 该方法还包括：将可流动氧化物沉积在绝缘层的顶表面上并进入沟槽中，然后将可流动的氧化物平坦化，直到绝缘层的顶表面的大约一个水平。 此外，该方法包括：蚀刻穿过沟槽内的可流动氧化物并且通过沟槽底部的绝缘材料向下蚀刻到下面的器件层以形成通孔。

公开(公告)号：US5641992A

公开(公告)日：1997-06-24

申请号：US513494

申请日：1995-08-10

申请人： Pei-Ing Paul Lee ,  Bernd Vollmer ,  Darryl Restaino ,  Bill Klaasen

发明人： Pei-Ing Paul Lee ,  Bernd Vollmer ,  Darryl Restaino ,  Bill Klaasen

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L23/48

CPC分类号： H01L21/76843 ,  H01L21/28512 ,  H01L21/7685 ,  H01L21/76877 ,  H01L23/53223 ,  H01L2924/0002

摘要： A multilayer interconnect structure for a semiconductor integrated circuit comprising a base layer of titanium, a second layer of titanium nitride, a third layer of an aluminum alloy and a top layer of titanium nitride. All of the layers contained within the multilayer interconnect structure are deposited by in-situ deposition in an ultra-high vacuum deposition system. The different layers deposited in the deposition system are conducted consecutively without a disruption to the vacuum. Although each layer in the multilayer interconnect structure are deposited within the integrated ultra-high vacuum deposition system, with multiple deposition chambers, the deposition of the different layers is conducted at different temperatures. The time to the electromigration failure of the multilayer interconnect structure, caused by the electromigration of the aluminum alloy, is greatly increased by depositing the aluminum alloy layer at a temperature in excess of 300.degree. C. and preferably between 350.degree. C. and 550.degree. C. The titanium layer and the adjacent titanium nitride layer below the aluminum alloy layer provide the interconnect structure with low resistivity and prevent alloy spiking of the base substrate. As a result, a multilayer interconnect structure provided that has improved electromigration reliability and a low resistance, thereby enabling more dense applications within an integrated circuit.

摘要翻译： 一种用于半导体集成电路的多层互连结构，包括钛基底层，第二氮化钛层，第三层铝合金和顶层氮化钛。 包含在多层互连结构内的所有层通过原位沉积沉积在超高真空沉积系统中。 沉积在沉积系统中的不同层连续进行，而不会破坏真空。 尽管多层互连结构中的每个层都沉积在具有多个沉积室的集成超高真空沉积系统内，但不同层的沉积在不同的温度下进行。 通过在超过300℃，优选350℃至550℃的温度下沉积铝合金层，由铝合金的电迁移引起的多层互连结构的电迁移故障的时间大大增加。 C.在铝合金层下面的钛层和相邻的氮化钛层提供具有低电阻率的互连结构并防止基底衬底的合金尖峰。 结果，提供了具有改善的电迁移可靠性和低电阻的多层互连结构，从而使集成电路内的应用更加密集。