公开(公告)号：US08716759B2

公开(公告)日：2014-05-06

申请号：US13430018

申请日：2012-03-26

申请人： Matthew J. Breitwisch ,  Roger W. Cheek ,  Jeffrey B. Johnson ,  Chung H. Lam ,  Beth A. Rainey ,  Michael J. Zierak

发明人： Matthew J. Breitwisch ,  Roger W. Cheek ,  Jeffrey B. Johnson ,  Chung H. Lam ,  Beth A. Rainey ,  Michael J. Zierak

IPC分类号： H01L29/76

CPC分类号： H01L29/66477 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/266 ,  H01L29/1083 ,  H01L29/6659 ,  H01L29/66833 ,  H01L29/7834 ,  H01L29/792

摘要： A prompt-shift device having reduced programming time in the sub-millisecond range is provided. The prompt-shift device includes an altered extension region located within said semiconductor substrate and on at least one side of the patterned gate region, and an altered halo region located within the semiconductor substrate and on at least one side of the patterned gate region. The altered extension region has an extension ion dopant concentration of less than about 1E20 atoms/cm3, and the altered extension region has a halo ion dopant concentration of greater than about 5E18 atoms/cm3. The altered halo region is in direct contact with the altered extension region.

摘要翻译： 提供了在亚毫秒范围内减少编程时间的提示移位装置。 快速移位装置包括位于所述半导体衬底内并且在图案化栅极区域的至少一侧上的改变的扩展区域，以及位于半导体衬底内以及位于图案化栅极区域的至少一侧的改变的卤素区域。 改变的延伸区域具有小于约1E20原子/ cm3的延伸离子掺杂剂浓度，并且改变的延伸区域具有大于约5E18原子/ cm3的卤素离子掺杂剂浓度。 改变的晕区与改变的延伸区直接接触。

公开(公告)号：US20120181627A1

公开(公告)日：2012-07-19

申请号：US13429930

申请日：2012-03-26

申请人： Matthew J. Breitwisch ,  Roger W. Cheek ,  Jeffrey B. Johnson ,  Chung H. Lam ,  Beth A. Rainey ,  Michael J. Zierak

发明人： Matthew J. Breitwisch ,  Roger W. Cheek ,  Jeffrey B. Johnson ,  Chung H. Lam ,  Beth A. Rainey ,  Michael J. Zierak

IPC分类号： H01L29/78

CPC分类号： H01L29/66477 ,  H01L21/26513 ,  H01L21/26546 ,  H01L21/26586 ,  H01L21/266 ,  H01L29/1083 ,  H01L29/6659 ,  H01L29/66833 ,  H01L29/7834 ,  H01L29/792

摘要： A prompt-shift device having reduced programming time in the sub-millisecond range is provided. The prompt-shift device includes an altered extension region located within said semiconductor substrate and on at least one side of the patterned gate region, and an altered halo region located within the semiconductor substrate and on at least one side of the patterned gate region. The altered extension region has an extension ion dopant concentration of less than about 1E20 atoms/cm3, and the altered extension region has a halo ion dopant concentration of greater than about 5E18 atoms/cm3. The altered halo region is in direct contact with the altered extension region.

公开(公告)号：US08278197B2

公开(公告)日：2012-10-02

申请号：US12130460

申请日：2008-05-30

申请人： Matthew J. Breitwisch ,  Roger W. Cheek ,  Jeffrey B. Johnson ,  Chung H. Lam ,  Beth A. Rainey ,  Michael J. Zierak

发明人： Matthew J. Breitwisch ,  Roger W. Cheek ,  Jeffrey B. Johnson ,  Chung H. Lam ,  Beth A. Rainey ,  Michael J. Zierak

IPC分类号： H01L21/265

CPC分类号： H01L29/66477 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/266 ,  H01L29/1083 ,  H01L29/6659 ,  H01L29/66833 ,  H01L29/7834 ,  H01L29/792

摘要： The invention provides a method to enhance the programmability of a prompt-shift device, which reduces the programming time to sub-millisecond times, by altering the extension and halo implants, instead of simply omitting the same from one side of the device as is the case in the prior art prompt-shift devices. The invention includes an embodiment in which no additional masks are employed, or one additional mask is employed. The altered extension implant is performed at a reduced ion dose as compared to a conventional extension implant process, while the altered halo implant is performed at a higher ion dose than a conventional halo implant. The altered halo/extension implant shifts the peak of the electrical field to under an extension dielectric spacer.

摘要翻译： 本发明提供了一种通过改变扩展和光晕注入来提高快速移位设备的可编程性的方法，其将编程时间缩短到几毫秒，而不是从设备的一侧简单地省略它 现有技术中的瞬时移位装置。 本发明包括其中不使用附加掩模的实施例，或者采用一个附加掩模。 与常规的延伸植入过程相比，改变的延伸植入物以降低的离子剂量进行，而改变的晕轮植入物以比常规的晕轮植入物更高的离子剂量进行。 改变的光晕/延伸注入将电场的峰值移动到延伸电介质间隔物下方。

公开(公告)号：US06642090B1

公开(公告)日：2003-11-04

申请号：US10063994

申请日：2002-06-03

申请人： David M. Fried ,  Edward J. Nowak ,  Beth A Rainey ,  Devendra K. Sadana

发明人： David M. Fried ,  Edward J. Nowak ,  Beth A Rainey ,  Devendra K. Sadana

IPC分类号： H01L218238

CPC分类号： H01L29/7851 ,  H01L21/823828 ,  H01L29/66795 ,  H01L29/66818 ,  H01L29/7853

摘要： The present invention thus provides a device structure and method for forming fin Field Effect Transistors (FETs) that overcomes many of the disadvantages of the prior art. Specifically, the device structure and method provides the ability to form finFET devices from bulk semiconductor wafers while providing improved wafer to wafer device uniformity. Specifically, the method facilitates the formation of finFET devices from bulk semiconductor wafers with improved fin height control. Additionally, the method provides the ability to form finFETs from bulk semiconductor while providing isolation between fins and between the source and drain region of individual finFETs. Finally, the method can also provide for the optimization of fin width. The device structure and methods of the present invention thus provide the advantages of uniform finFET fabrication while using cost effect bulk wafers.

摘要翻译： 因此，本发明提供了克服现有技术的许多缺点的用于形成鳍状场效应晶体管（FET）的器件结构和方法。 具体地，器件结构和方法提供了从批量半导体晶片形成finFET器件的能力，同时提供改进的晶片到晶片器件的均匀性。 具体地说，该方法有助于从散装半导体晶片形成finFET器件，从而改进翅片高度控制。 此外，该方法提供了从散装半导体形成finFET的能力，同时提供散热片之间的隔离以及各个finFET的源极和漏极区域之间的隔离。 最后，该方法还可以提供翅片宽度的优化。 因此，本发明的器件结构和方法提供均匀的finFET制造的优点，同时使用成本效应的体晶片。

公开(公告)号：US20120181628A1

公开(公告)日：2012-07-19

申请号：US13430018

申请日：2012-03-26

申请人： Matthew J. Breitwisch ,  Roger W. Cheek ,  Jeffrey B. Johnson ,  Chung H. Lam ,  Beth A. Rainey ,  Michael J. Zierak

发明人： Matthew J. Breitwisch ,  Roger W. Cheek ,  Jeffrey B. Johnson ,  Chung H. Lam ,  Beth A. Rainey ,  Michael J. Zierak

IPC分类号： H01L29/78

CPC分类号： H01L29/66477 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/266 ,  H01L29/1083 ,  H01L29/6659 ,  H01L29/66833 ,  H01L29/7834 ,  H01L29/792

摘要： A prompt-shift device having reduced programming time in the sub-millisecond range is provided. The prompt-shift device includes an altered extension region located within said semiconductor substrate and on at least one side of the patterned gate region, and an altered halo region located within the semiconductor substrate and on at least one side of the patterned gate region. The altered extension region has an extension ion dopant concentration of less than about 1E20 atoms/cm3, and the altered extension region has a halo ion dopant concentration of greater than about 5E18 atoms/cm3. The altered halo region is in direct contact with the altered extension region.

摘要翻译： 提供了在亚毫秒范围内减少编程时间的提示移位装置。 快速移位装置包括位于所述半导体衬底内并且在图案化栅极区域的至少一侧上的改变的扩展区域，以及位于半导体衬底内以及位于图案化栅极区域的至少一侧的改变的卤素区域。 改变的延伸区域具有小于约1E20原子/ cm3的延伸离子掺杂剂浓度，并且改变的延伸区域具有大于约5E18原子/ cm3的卤素离子掺杂剂浓度。 改变的晕区与改变的延伸区直接接触。

公开(公告)号：US20090294850A1

公开(公告)日：2009-12-03

申请号：US12130460

申请日：2008-05-30

申请人： Matthew J. Breitwisch ,  Roger W. Cheek ,  Jeffrey B. Johnson ,  Chung H. Lam ,  Beth A. Rainey ,  Michael J. Zierak

发明人： Matthew J. Breitwisch ,  Roger W. Cheek ,  Jeffrey B. Johnson ,  Chung H. Lam ,  Beth A. Rainey ,  Michael J. Zierak

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66477 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/266 ,  H01L29/1083 ,  H01L29/6659 ,  H01L29/66833 ,  H01L29/7834 ,  H01L29/792

摘要： The invention provides a method to enhance the programmability of a prompt-shift device, which reduces the programming time to sub-millisecond times, by altering the extension and halo implants, instead of simply omitting the same from one side of the device as is the case in the prior art prompt-shift devices. The invention includes an embodiment in which no additional masks are employed, or one additional mask is employed. The altered extension implant is performed at a reduced ion dose as compared to a conventional extension implant process, while the altered halo implant is performed at a higher ion dose than a conventional halo implant. The altered halo/extension implant shifts the peak of the electrical field to under an extension dielectric spacer.

摘要翻译： 本发明提供了一种通过改变扩展和光晕注入来提高快速移位设备的可编程性的方法，其将编程时间缩短到几毫秒，而不是从设备的一侧简单地省略它 现有技术中的瞬时移位装置。 本发明包括其中不使用附加掩模的实施例，或者采用一个附加掩模。 与常规的延伸植入过程相比，改变的延伸植入物以降低的离子剂量进行，而改变的晕轮植入物以比常规的晕轮植入物更高的离子剂量进行。 改变的光晕/延伸注入将电场的峰值移动到延伸电介质间隔物下方。