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1.发明授权Semiconductor optical device on an indium phosphide substrate for long operating wavelengths 有权磷化铟衬底上的半导体光学器件，用于长波长工作公开(公告)号：US07109526B2
公开(公告)日：2006-09-19
申请号：US10893140
申请日：2004-07-15
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , H01S5/3201 , H01S5/3235 , H01S5/32366 , H01S5/3403 , H01S5/343 , H01S5/34306 , H01S2302/00
摘要： A semiconductor optical device such as a laser or semiconductor optical amplifier (SOA) based on an indium phosphide substrate or equivalent buffer layer. The active layer of the device is based on conventional InGaAs(P) alloy, but additionally includes N in order to increase the operating wavelength to greater than 1.5 μm, preferably to a wavelength lying in the C- or L-band. The active layer composition may thus be denoted In1-xGaxAsyNzPp with x≧0.48, y≦1−z−p, z≦0.05, p≧0. The active layer may include a quantum well or multi-quantum wells in which case its thickness is preferably less than the critical thickness for lattice relaxation. In other embodiments the active layer is a “massive” layer with quasi-bulk properties. The active layer may advantageously be under tensile stress, preferably roughly between 1% and 2.2%, to manipulate the light and heavy hole bands. The active layer is typically bounded by barrier layers made of a suitable semiconductor alloy, such as AlInAs or InGaAs(P).
摘要翻译： 基于铟磷化物衬底或等效缓冲层的半导体光学器件，例如激光器或半导体光放大器（SOA）。 器件的有源层基于常规的InGaAs（P）合金，但是另外包括N以便将工作波长增加到大于1.5μm，优选地增加到位于C波段或L波段中的波长。 因此，活性层组合物可以表示为：1-x Ga x N z N z， p
= 0.48，y <= 1-zp，z <= 0.05，p> = 0。 有源层可以包括量子阱或多量子阱，在这种情况下，其厚度优选小于晶格弛豫的临界厚度。 在其它实施方案中，活性层是具有准体积性质的“块状”层。 活性层可以有利地处于拉伸应力下，优选大约在1％和2.2％之间，以操纵轻质和重型孔带。 有源层通常由诸如AlInAs或InGaAs（P）的合适的半导体合金制成的阻挡层限制。 -
公开(公告)号：US20050232329A1
公开(公告)日：2005-10-20
申请号：US10520837
申请日：2003-07-04
申请人： Bruno Thedrez
发明人： Bruno Thedrez
CPC分类号： H01S5/12 , H01S5/10 , H01S5/105 , H01S5/1228 , H01S5/1237 , H01S5/125 , H01S5/2205 , H01S5/227
摘要： The invention relates to a semiconductor laser consisting of an active waveguide (3) comprising an active region surrounded by a filling material (5) and which is coupled to a distributed reflector (7, 8). Said distributed reflector (7, 8) is made from the aforementioned filling material (5) and is disposed along the length of the lateral sides of the active region (4) essentially parallel to same and in the form of a structuring having a photonic band gap along the longitudinal axis (X) of the laser. According to the invention, the structuring defines a first photonic crystal with columns (9) forming diffracting elements, said crystal comprising a mesh having dimensions of the order of the wavelength of photons in the guided mode which circulate in the active waveguide (3).
摘要翻译： 本发明涉及一种由有源波导（3）组成的半导体激光器，该有源波导（3）包括被填充材料（5）包围的有源区域，并且耦合到分布式反射器（7,8）。 所述分布式反射器（7,8）由上述填充材料（5）制成，并且沿着有源区域（4）的横向侧面的长度基本上平行于相同并且具有光子带的结构形式 沿着激光的纵轴（X）的间隙。 根据本发明，结构定义了具有形成衍射元件的列（9）的第一光子晶体，所述晶体包括具有在有源波导（3）中循环的引导模式中的光子的波长的尺寸尺寸的网格。
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公开(公告)号：US09036997B2
公开(公告)日：2015-05-19
申请号：US13878183
申请日：2011-10-07
IPC分类号： H04B10/00 , H04J14/06 , H04B10/50 , H04B10/516 , H04J14/00
CPC分类号： H04J14/06 , H04B10/506 , H04B10/516 , H04J14/005
摘要： A transmitter and a receiver for an optical telecommunication system of the WDM type are disclosed. In one aspect, the transmitter uses a chromato-temporal encoder which, with each block of symbols to be transmitted, associates a code matrix, where each element of the matrix corresponds to a wavelength and a use of the channel. The transmitter includes multiple modulators, where each modulator modulates a laser beam at a wavelength during a use of the channel by an element corresponding to the code matrix. The beams modulated in this manner are multiplexed in an optical fiber. Another embodiment using both a wavelength and a polarization encoding is also proposed.
摘要翻译： 公开了一种用于WDM类型的光通信系统的发射机和接收机。 在一个方面，发射机使用色谱时间编码器，其中每个符号块被传输，将码矩阵相关联，其中矩阵的每个元素对应于波长和信道的使用。 发射机包括多个调制器，其中每个调制器在使用通道期间通过与代码矩阵相对应的元件在一个波长处调制激光束。 以这种方式调制的光束被复用在光纤中。 还提出了使用波长和偏振编码的另一实施例。
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4.发明申请公开(公告)号：US20130272705A1
公开(公告)日：2013-10-17
申请号：US13878183
申请日：2011-10-07
IPC分类号： H04J14/06
CPC分类号： H04J14/06 , H04B10/506 , H04B10/516 , H04J14/005
摘要： A transmitter and a receiver for an optical telecommunication system of the WDM type are disclosed. In one aspect, the transmitter uses a chromato-temporal encoder which, with each block of symbols to be transmitted, associates a code matrix, where each element of the matrix corresponds to a wavelength and a use of the channel. The transmitter includes multiple modulators, where each modulator modulates a laser beam at a wavelength during a use of the channel by an element corresponding to the code matrix. The beams modulated in this manner are multiplexed in an optical fiber. Another embodiment using both a wavelength and a polarization encoding is also proposed.
摘要翻译： 公开了一种用于WDM类型的光通信系统的发射机和接收机。 在一个方面，发射机使用色谱时间编码器，其中每个符号块被传输，将码矩阵相关联，其中矩阵的每个元素对应于波长和信道的使用。 发射机包括多个调制器，其中每个调制器在使用通道期间通过与代码矩阵相对应的元件在一个波长处调制激光束。 以这种方式调制的光束被复用在光纤中。 还提出了使用波长和偏振编码的另一实施例。
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公开(公告)号：US07254154B2
公开(公告)日：2007-08-07
申请号：US10520837
申请日：2003-07-04
申请人： Bruno Thedrez
发明人： Bruno Thedrez
IPC分类号： H01S3/08
CPC分类号： H01S5/12 , H01S5/10 , H01S5/105 , H01S5/1228 , H01S5/1237 , H01S5/125 , H01S5/2205 , H01S5/227
摘要： The invention relates to a semiconductor laser consisting of an active waveguide comprising an active region surrounded by a filling material and which is coupled to a distributed reflector. Said distributed reflector is made from the aforementioned filling material and is disposed along the length of the lateral sides of the active region essentially parallel to same and in the form of a structuring having a photonic band gap along the longitudinal axis of the laser. According to the invention, the structuring defines a first photonic crystal with columns forming diffracting elements, said crystal comprising a mesh having dimensions of the order of the wavelength of photons in the guided mode which circulate in the active waveguide.
摘要翻译： 本发明涉及一种由有源波导组成的半导体激光器，该有源波导包括由填充材料包围并且与分布式反射器耦合的有源区域。 所述分布式反射器由上述填充材料制成，并且沿着有源区域的横向侧面的长度基本上平行于相同并且具有沿着激光器的纵向轴线的具有光子带隙的结构形式设置。 根据本发明，结构定义了具有形成衍射元件的列的第一光子晶体，所述晶体包括具有在有源波导中循环的引导模式中的光子的波长的尺寸的尺寸的网格。
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6.发明申请Semiconductor optical device on an indium phosphide substrate for long operating wavelengths 有权磷化铟衬底上的半导体光学器件，用于长波长工作公开(公告)号：US20050056868A1
公开(公告)日：2005-03-17
申请号：US10893140
申请日：2004-07-15
IPC分类号： H01S5/32 , H01S5/323 , H01S5/34 , H01S5/343 , H01L29/768
CPC分类号： B82Y20/00 , H01S5/3201 , H01S5/3235 , H01S5/32366 , H01S5/3403 , H01S5/343 , H01S5/34306 , H01S2302/00
摘要： A semiconductor optical device such as a laser or semiconductor optical amplifier (SOA) based on an indium phosphide substrate or equivalent buffer layer. The active layer of the device is based on conventional InGaAs(P) alloy, but additionally includes N in order to increase the operating wavelength to greater than 1.5 μm, preferably to a wavelength lying in the C- or L-band. The active layer composition may thus be denoted In1-xGaxAsyNzPp with x≧0.48, y≦1-z-p, z≦0.05, p≧0. The active layer may include a quantum well or multi-quantum wells in which case its thickness is preferably less than the critical thickness for lattice relaxation. In other embodiments the active layer is a “massive” layer with quasi-bulk properties. The active layer may advantageously be under tensile stress, preferably roughly between 1% and 2.2%, to manipulate the light and heavy hole bands. The active layer is typically bounded by barrier layers made of a suitable semiconductor alloy, such as AlInAs or InGaAs(P).
摘要翻译： 基于铟磷化物衬底或等效缓冲层的半导体光学器件，例如激光器或半导体光放大器（SOA）。 器件的有源层基于常规的InGaAs（P）合金，但是另外包括N以便将工作波长增加到大于1.5μm，优选地增加到位于C波段或L波段中的波长。 因此，活性层组合物可以表示为x1 = 0.48，y <= 1-z-p，z <= 0.05，p> = 0的In1-xGaxAsyNzPp。 有源层可以包括量子阱或多量子阱，在这种情况下，其厚度优选小于晶格弛豫的临界厚度。 在其它实施方案中，活性层是具有准体积性质的“块状”层。 活性层可以有利地处于拉伸应力下，优选大约在1％和2.2％之间，以操纵轻质和重型孔带。 有源层通常由诸如AlInAs或InGaAs（P）的合适的半导体合金制成的阻挡层限制。
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