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1.发明授权Semiconductor optical device on an indium phosphide substrate for long operating wavelengths 有权磷化铟衬底上的半导体光学器件，用于长波长工作公开(公告)号：US07109526B2
公开(公告)日：2006-09-19
申请号：US10893140
申请日：2004-07-15
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , H01S5/3201 , H01S5/3235 , H01S5/32366 , H01S5/3403 , H01S5/343 , H01S5/34306 , H01S2302/00
摘要： A semiconductor optical device such as a laser or semiconductor optical amplifier (SOA) based on an indium phosphide substrate or equivalent buffer layer. The active layer of the device is based on conventional InGaAs(P) alloy, but additionally includes N in order to increase the operating wavelength to greater than 1.5 μm, preferably to a wavelength lying in the C- or L-band. The active layer composition may thus be denoted In1-xGaxAsyNzPp with x≧0.48, y≦1−z−p, z≦0.05, p≧0. The active layer may include a quantum well or multi-quantum wells in which case its thickness is preferably less than the critical thickness for lattice relaxation. In other embodiments the active layer is a “massive” layer with quasi-bulk properties. The active layer may advantageously be under tensile stress, preferably roughly between 1% and 2.2%, to manipulate the light and heavy hole bands. The active layer is typically bounded by barrier layers made of a suitable semiconductor alloy, such as AlInAs or InGaAs(P).
摘要翻译： 基于铟磷化物衬底或等效缓冲层的半导体光学器件，例如激光器或半导体光放大器（SOA）。 器件的有源层基于常规的InGaAs（P）合金，但是另外包括N以便将工作波长增加到大于1.5μm，优选地增加到位于C波段或L波段中的波长。 因此，活性层组合物可以表示为：1-x Ga x N z N z， p
= 0.48，y <= 1-zp，z <= 0.05，p> = 0。 有源层可以包括量子阱或多量子阱，在这种情况下，其厚度优选小于晶格弛豫的临界厚度。 在其它实施方案中，活性层是具有准体积性质的“块状”层。 活性层可以有利地处于拉伸应力下，优选大约在1％和2.2％之间，以操纵轻质和重型孔带。 有源层通常由诸如AlInAs或InGaAs（P）的合适的半导体合金制成的阻挡层限制。 -
2.发明申请Semiconductor optical device on an indium phosphide substrate for long operating wavelengths 有权磷化铟衬底上的半导体光学器件，用于长波长工作公开(公告)号：US20050056868A1
公开(公告)日：2005-03-17
申请号：US10893140
申请日：2004-07-15
IPC分类号： H01S5/32 , H01S5/323 , H01S5/34 , H01S5/343 , H01L29/768
CPC分类号： B82Y20/00 , H01S5/3201 , H01S5/3235 , H01S5/32366 , H01S5/3403 , H01S5/343 , H01S5/34306 , H01S2302/00
摘要： A semiconductor optical device such as a laser or semiconductor optical amplifier (SOA) based on an indium phosphide substrate or equivalent buffer layer. The active layer of the device is based on conventional InGaAs(P) alloy, but additionally includes N in order to increase the operating wavelength to greater than 1.5 μm, preferably to a wavelength lying in the C- or L-band. The active layer composition may thus be denoted In1-xGaxAsyNzPp with x≧0.48, y≦1-z-p, z≦0.05, p≧0. The active layer may include a quantum well or multi-quantum wells in which case its thickness is preferably less than the critical thickness for lattice relaxation. In other embodiments the active layer is a “massive” layer with quasi-bulk properties. The active layer may advantageously be under tensile stress, preferably roughly between 1% and 2.2%, to manipulate the light and heavy hole bands. The active layer is typically bounded by barrier layers made of a suitable semiconductor alloy, such as AlInAs or InGaAs(P).
摘要翻译： 基于铟磷化物衬底或等效缓冲层的半导体光学器件，例如激光器或半导体光放大器（SOA）。 器件的有源层基于常规的InGaAs（P）合金，但是另外包括N以便将工作波长增加到大于1.5μm，优选地增加到位于C波段或L波段中的波长。 因此，活性层组合物可以表示为x1 = 0.48，y <= 1-z-p，z <= 0.05，p> = 0的In1-xGaxAsyNzPp。 有源层可以包括量子阱或多量子阱，在这种情况下，其厚度优选小于晶格弛豫的临界厚度。 在其它实施方案中，活性层是具有准体积性质的“块状”层。 活性层可以有利地处于拉伸应力下，优选大约在1％和2.2％之间，以操纵轻质和重型孔带。 有源层通常由诸如AlInAs或InGaAs（P）的合适的半导体合金制成的阻挡层限制。
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3.发明授权
公开(公告)号：US5687272A
公开(公告)日：1997-11-11
申请号：US602380
申请日：1996-02-16
CPC分类号： H01S5/0265 , G02B6/1228 , G02B6/305
摘要： An optical waveguide includes, in monolithic manner, a rear segment, a transition segment, and a front segment extending and succeeding one another along the length of the waveguide. A lateral confinement factor and a width the waveguide are respectively larger and smaller in the rear segment than in the front segment. According to the invention, the width increases in the transition segment until it reaches a value that is larger than that of the front segment. The invention is particularly applicable to integrating together a laser and an optical modulator for a telecommunications system.
摘要翻译： 光波导以整体方式包括沿着波导的长度彼此延伸和相继延伸的后段，过渡段和前段。 横向约束因子和波导在后段中分别比前段更大和更小。 根据本发明，过渡段中的宽度增加，直到达到大于前段的值。 本发明特别适用于将用于电信系统的激光器和光调制器集成在一起。
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公开(公告)号：US5712864A
公开(公告)日：1998-01-27
申请号：US616382
申请日：1996-03-15
IPC分类号： G02F1/025 , G02B6/12 , G02B6/42 , H01L31/10 , H01L31/12 , H01S5/00 , H01S5/026 , H01S5/042 , H04B10/12 , H04B10/24 , H01S3/19 , H01S3/08 , H01S3/10
CPC分类号： G02B6/4246 , H01S5/0262 , H01S5/0265 , G02B2006/12164
摘要： A semiconductor photonic diplex transceiver includes a laser to generate a first optical signal having a certain wavelength and a photodetector to detect a second optical signal having another wavelength. The diplex transceiver also includes an absorber of the first signal disposed between the laser and the detector which form integral parts of an optical waveguide. The laser generates the first signal in the form of a continuous wave and is disposed between the absorber and a selective modulator of the first signal. This reduces the problems of optical and electrical crosstalk between the transmit and receive functions. Applications include user premises optical fiber transmit/receive equipments.
摘要翻译： 半导体光子二重收发器包括用于产生具有一定波长的第一光信号的激光器和用于检测具有另一波长的第二光信号的光电检测器。 双工收发器还包括设置在激光器和检测器之间的第一信号的吸收器，其形成光波导的整体部分。 激光器以连续波的形式产生第一信号，并且设置在吸收器和第一信号的选择性调制器之间。 这减少了发射和接收功能之间的光和电串扰的问题。 应用包括用户住宅光纤发射/接收设备。
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公开(公告)号：US4904608A
公开(公告)日：1990-02-27
申请号：US297821
申请日：1989-01-17
IPC分类号： H01L31/10 , H01L31/105
CPC分类号： H01L31/105
摘要： A PIN photodiode having a low leakage current comprises a substrate (10) of indium phosphide (InP) which is n.sup.+ doped and on whose first surface is formed a layer (11) of indium phosphide (InP) which is n.sup.- doped and on which is disposed a MESA structure formed by a layer (12) of gallium indium arsenide (InGaAs) which is n.sup.- doped and is moreover constituted by a layer (13, 113, 213) of the p.sup.+ type formed at the surface, at the edges and along the circumference of the MESA structure. The structure further comprises a metallic contact (22) formed on the second surface of the substrate and an ohmic contact (21) formed on a part of the p.sup.+ layer. The invention is characterized in that the n.sup.- doping of the layer of indium phosphide (InP) (11) is chosen to be lower than the n.sup.- doping of the layer of gallium indium arsenide (InGaAs) (12), and in that the ohmic contact (21) is formed on a part (213) of the p.sup.+ zone located in the layer of indium phosphide (InP) (11) along the circumference of the MESA structure.
摘要翻译： 具有低泄漏电流的PIN光电二极管包括磷化铟（InP）的衬底（10），其是n +掺杂的，并且其第一表面形成为掺杂的磷化铟（InP）层（11），并且其上 设置由掺杂砷化镓（InGaAs）的层（12）形成的MESA结构，并且还由在表面处形成的p +型的层（13,113,213），在边缘 并沿着MESA结构的圆周。 该结构还包括形成在衬底的第二表面上的金属触点（22）和形成在p +层的一部分上的欧姆接触（21）。 本发明的特征在于，磷化铟层（InP）（11）的n掺杂选择为低于砷化镓砷（InGaAs）（12）的n掺杂，并且因为 欧姆接触（21）沿着MESA结构的圆周形成在位于磷化铟（InP）（11）层中的p +区的部分（213）上。
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6.发明授权Integrated semiconductor arrangement of the coupling type between a photodetector and a light waveguide 失效在光电检测器和光波导之间的耦合类型的集成半导体布置
公开(公告)号：US4893162A
公开(公告)日：1990-01-09
申请号：US81212
申请日：1987-06-29
申请人： Jean-Louis Gentner , Marko Erman
发明人： Jean-Louis Gentner , Marko Erman
CPC分类号： G02B6/42 , G02B6/12004
摘要： An integrated semiconductor arrangement of the coupling type between a photodetector D and a light wave guide G.sub.1, operating in a band of given wavelengths, containing on the surface of a semiconductor substrate S of a III-V compound one after the other a confining layer C.sub.0 of III-V compound and a transparent layer C.sub.1 of a III-V compound for the operating wavelengths having an index superior to that of the confining layer, the light waveguide G.sub.1 being realized in layer C.sub.1, and also containing an absorbing layer C.sub.3 of a III-V compound for the operating wavelengths having an index superior to that of the waveguide, in which layer C.sub.3 the photodetector is realized, characterized in that the absorbing layer C.sub.3 is deposited on top of the transparent layer C.sub.1 such that the photodetector is formed on the surface of the light wave guide G.sub.1 and coupled to the latter in parallel with its axis over a given coupling length L.sub.2 of which is a function the amount of light issued by the guide and received by the photodetector. This arrangement can also include, deposited between the transparent layer C.sub.1, hereinafter called first transparent layer and the absorbing layer C.sub.3, a second transparent layer C.sub.2 of a III-V compound for the operating wavelengths having an index lying between that of the first transparent layer C.sub.1 and that of the absorbing layer C.sub.3.
摘要翻译： 光电探测器D和光波导G1之间的耦合类型的集成半导体装置，其以一定的波长的波段工作，在III-V族化合物的半导体衬底S的表面上一个接一个地包含限定层C0 的III-V族化合物和III-V族化合物的透明层C1，其对于具有优于限制层的折射率的工作波长，光波导G1在层C1中实现，并且还含有 对于具有优于波导的指数的工作波长的III-V族化合物，其中实现了光电检测器C3，其特征在于，吸收层C3沉积在透明层C1的顶部上，使得光电检测器形成在 光波导G1的表面，并且在其给定的耦合长度L2上与其轴线平行地联接，该耦合长度L2是由导向器发出的光量并且接收的函数 d。 这种布置还可以包括沉积在透明层C1（以下称为第一透明层）和吸收层C3之间的第三透明层C2，III-V族化合物的第二透明层C2具有位于第一透明层 C1和吸收层C3。
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公开(公告)号：US5916822A
公开(公告)日：1999-06-29
申请号：US694112
申请日：1996-08-08
IPC分类号： C30B23/08 , C23F4/00 , C30B23/02 , H01L21/203 , H01L21/302 , H01L21/18
CPC分类号： C30B23/02 , Y10S438/913 , Y10S438/944
摘要： In order to facilitate resuming molecular beam epitaxy after etching a substrate or an epitaxial layer, the etching method is implemented in an ultra-high vacuum, and it consists in producing at least two simultaneous chemical beams converging towards the substrate or the layer, the beams being formed of substances, each of which is capable of reacting with elements of different types in the substrate or the layer so as to form volatile compounds. Application in particular to manufacturing photonic and optoelectronic components.
摘要翻译： 为了便于在蚀刻衬底或外延层之后恢复分子束外延，蚀刻方法在超高真空中实现，并且其包括产生朝向衬底或层会聚的至少两个同时化学束， 由物质形成，每种物质能够在基材或层中与不同类型的元素反应，以形成挥发性化合物。 特别适用于制造光子和光电子元件。
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公开(公告)号：US4999696A
公开(公告)日：1991-03-12
申请号：US298201
申请日：1989-01-17
IPC分类号： H01L31/10 , H01L31/105
CPC分类号： H01L31/105
摘要： A PIN photodiode having a low leakage current comprises a substrate (10) of indium phosphide (InP) which is n.sup.30 doped and on whose first surface is formed a layer (11) of indium phosphide (InP) which is n.sup.- doped and on which is disposed a MESA structure formed by a layer (b 12) of gallium indium arsenide (InGaAs) which is n.sup.- doped and is moreover constituted by a layer (13, 113, 213) of the p.sup.+ type formed at the surface, at the edges and along the circumference of the MESA structure. The structure further comprises a metallic contact (22) formed on the second surface of the substrate and an ohmic contact (21) formed on a part of the p.sup.+ layer. The invention is characterized in that the n.sup.- doping of the layer of indium phosphide (InP) (11) is chosen to be lower than the n.sup.- doping of the layer of gallium indium arsenide (InGaAs) (12), and in that the ohmic contact (21) is formed on a part (213) of the p.sup.+ zone located in the layer of indium phosphide (InP) (11) along the circumference of the MESA structure.
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公开(公告)号：US4975388A
公开(公告)日：1990-12-04
申请号：US357143
申请日：1989-05-25
IPC分类号： C30B25/02 , H01L21/205
CPC分类号： C30B25/02 , C30B29/40 , H01L21/02392 , H01L21/02433 , H01L21/02463 , H01L21/02543 , H01L21/0262 , H01L21/02661 , Y10S148/072 , Y10S148/097
摘要： A method of manufacturing a semiconductor device comprising at least the step of forming by a so-called method of deposition from the chloride vapour phase two superimposed epitaxial layers, the lower layer being made of a ternary compound and the upper layer being made of a binary compound, both of a semiconductor material of the III-V group, characterized in that the operating conditions of deposition temperature and molar fractions of the compounds required to form the layers are chosen so that both the lower layer of ternary material and the upper layer of binary material have before, during and after the transient state corresponding to the passage from the lower layer to the upper layer a maximum rate of coverage with chlorine (Cl) atoms.Application: hetero-structure GaInAs/InP for optoelectronic integrated circuits.
摘要翻译： 一种制造半导体器件的方法，其至少包括通过所谓的氯化物气相沉积两个叠加的外延层形成的步骤，下层由三元化合物制成，上层由二元组成 化合物，III-V族的半导体材料，其特征在于，选择形成层所需化合物的沉积温度和摩尔分数的操作条件，使得三元材料的下层和上层的 二元材料在对应于从下层到上层的过渡状态之前，之中和之后具有氯（Cl）原子的最大覆盖率。 应用：光电集成电路的异质结GaInAs / InP。
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