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    Fabrication of CuZnSn(S,Se) Thin Film Solar Cell with Valve Controlled S and Se
    1.
    发明申请
    Fabrication of CuZnSn(S,Se) Thin Film Solar Cell with Valve Controlled S and Se 审中-公开
    具有阀控S和Se的CuZnSn（S，Se）薄膜太阳能电池的制造

    公开(公告)号：US20120100663A1

    公开(公告)日：2012-04-26

    申请号：US12911915

    申请日：2010-10-26

    Applicant: Nestor A. Bojarczuk ,  Supratik Guha ,  Byungha Shin ,  Kejia Wang

    Inventor： Nestor A. Bojarczuk ,  Supratik Guha ,  Byungha Shin ,  Kejia Wang

    IPC: H01L21/76

    CPC classification number: H01L31/0326 ,  H01L31/072 ,  Y02E10/50

    Abstract: Techniques for fabricating thin film solar cells are provided. In one aspect, a method of fabricating a solar cell includes the following steps. A molybdenum (Mo)-coated substrate is provided. Absorber layer constituent components, two of which are sulfur (S) and selenium (Se), are deposited on the Mo-coated substrate. The S and Se are deposited on the Mo-coated substrate using thermal evaporation in a vapor chamber. Controlled amounts of the S and Se are introduced into the vapor chamber to regulate a ratio of the S and Se provided for deposition. The constituent components are annealed to form an absorber layer on the Mo-coated substrate. A buffer layer is formed on the absorber layer. A transparent conductive electrode is formed on the buffer layer.

    Abstract translation: 提供制造薄膜太阳能电池的技术。 一方面，制造太阳能电池的方法包括以下步骤。 提供了钼（Mo）涂覆的基材。 其中两个是硫（S）和硒（Se）的吸收剂层组成成分沉积在Mo涂覆的基底上。 使用蒸发室中的热蒸发将S和Se沉积在Mo涂覆的基底上。 将S和Se的控制量引入蒸气室以调节用于沉积的S和Se的比例。 将这些构成组分退火以在Mo涂覆的基底上形成吸收层。 在吸收层上形成缓冲层。 在缓冲层上形成透明导电电极。

    Using Diffusion Barrier Layer for CuZnSn(S,Se) Thin Film Solar Cell
    6.
    发明申请
    Using Diffusion Barrier Layer for CuZnSn(S,Se) Thin Film Solar Cell 审中-公开
    使用CuZnSn（S，Se）薄膜太阳能电池的扩散阻挡层

    公开(公告)号：US20120097234A1

    公开(公告)日：2012-04-26

    申请号：US12911877

    申请日：2010-10-26

    Applicant: Nestor A. Bojarczuk ,  Supratik Guha ,  Byungha Shin ,  Kejia Wang

    Inventor： Nestor A. Bojarczuk ,  Supratik Guha ,  Byungha Shin ,  Kejia Wang

    IPC: H01L31/0224

    CPC classification number: H01L31/0326 ,  H01L31/022483 ,  H01L31/1864 ,  Y02E10/50 ,  Y02P70/521

    Abstract: Techniques for fabricating thin film solar cells, such as CuZnSn(S,Se) (CZTSSe) solar cells are provided. In one aspect, a method of fabricating a solar cell is provided that includes the following steps. A substrate is provided. The substrate is coated with a molybdenum (Mo) layer. A stress-relief layer is deposited on the Mo layer. The stress-relief layer is coated with a diffusion barrier. Absorber layer constituent components are deposited on the diffusion barrier, wherein the constituent components comprise one or more of sulfur (S) and selenium (Se). The constituent components are annealed to form an absorber layer, wherein the stress-relief layer relieves thermal stress imposed on the absorber layer, and wherein the diffusion barrier blocks diffusion of the one or more of S and Se into the Mo layer. A buffer layer is formed on the absorber layer. A transparent conductive electrode is formed on the buffer layer.

    Abstract translation: 提供了诸如CuZnSn（S，Se）（CZTSSe）（CZTSSe）太阳能电池制造薄膜太阳能电池的技术。 一方面，提供一种制造太阳能电池的方法，其包括以下步骤。 提供基板。 衬底被涂覆有钼（Mo）层。 应力消除层沉积在Mo层上。 应力消除层涂覆有扩散阻挡层。 吸收剂层组成成分沉积在扩散阻挡层上，其中构成组分包含硫（S）和硒（Se）中的一种或多种。 所述构成部件进行退火以形成吸收层，其中所述应力消除层减轻施加在所述吸收体层上的热应力，并且其中所述扩散阻挡层将所述S和Se中的一种或多种的扩散阻挡在所述Mo层中。 在吸收层上形成缓冲层。 在缓冲层上形成透明导电电极。

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