公开(公告)号：US09780113B2

公开(公告)日：2017-10-03

申请号：US14963803

申请日：2015-12-09

申请人： Jiwoon Im ,  Kwangchul Park ,  Jiyoun Seo ,  Jongmyeong Lee ,  Kyung-Tae Jang ,  Byungho Chun ,  Won-Seok Jung ,  Jongwan Choi ,  Tae-Jong Han

发明人： Jiwoon Im ,  Kwangchul Park ,  Jiyoun Seo ,  Jongmyeong Lee ,  Kyung-Tae Jang ,  Byungho Chun ,  Won-Seok Jung ,  Jongwan Choi ,  Tae-Jong Han

IPC分类号： H01L21/336 ,  H01L27/11582 ,  H01L27/1157 ,  H01L27/11575 ,  H01L21/768

CPC分类号： H01L27/11582 ,  H01L21/76837 ,  H01L27/1157 ,  H01L27/11575

摘要： A method for fabricating a semiconductor device includes forming a stacked structure on a substrate, forming a first interlayer dielectric covering the stacked structure, and forming a second interlayer dielectric covering the first interlayer dielectric. The stacked structure includes a stepwise shape. The first interlayer dielectric includes at least one step portion having a slope surface connecting a first top surface to a second top surface. The first top surface and the sloped surface define a first angle that is an obtuse angle. A level of the second top surface is higher than a level of the first top surface.

公开(公告)号：US20160233232A1

公开(公告)日：2016-08-11

申请号：US14963803

申请日：2015-12-09

申请人： Jiwoon IM ,  Kwangchul PARK ,  Jiyoun SEO ,  Jongmyeong LEE ,  Kyung-Tae JANG ,  Byungho CHUN ,  Won-Seok JUNG ,  Jongwan CHOI ,  Tae-Jong HAN

发明人： Jiwoon IM ,  Kwangchul PARK ,  Jiyoun SEO ,  Jongmyeong LEE ,  Kyung-Tae JANG ,  Byungho CHUN ,  Won-Seok JUNG ,  Jongwan CHOI ,  Tae-Jong HAN

IPC分类号： H01L27/115 ,  H01L21/02 ,  H01L21/768

CPC分类号： H01L27/11582 ,  H01L21/76837 ,  H01L27/1157 ,  H01L27/11575

摘要： A method for fabricating a semiconductor device includes forming a stacked structure on a substrate, forming a first interlayer dielectric covering the stacked structure, and forming a second interlayer dielectric covering the first interlayer dielectric. The stacked structure includes a stepwise shape. The first interlayer dielectric includes at least one step portion having a slope surface connecting a first top surface to a second top surface. The first top surface and the sloped surface define a first angle that is an obtuse angle. A level of the second top surface is higher than a level of the first top surface.

摘要翻译： 一种制造半导体器件的方法包括在衬底上形成叠层结构，形成覆盖层叠结构的第一层间电介质，以及形成覆盖第一层间电介质的第二层间电介质。 堆叠结构包括逐步形状。 第一层间电介质包括至少一个具有将第一顶表面连接到第二顶表面的倾斜表面的台阶部分。 第一顶表面和倾斜表面限定为钝角的第一角度。 第二顶表面的水平高于第一顶表面的水平。