公开(公告)号：US09780113B2

公开(公告)日：2017-10-03

申请号：US14963803

申请日：2015-12-09

申请人： Jiwoon Im ,  Kwangchul Park ,  Jiyoun Seo ,  Jongmyeong Lee ,  Kyung-Tae Jang ,  Byungho Chun ,  Won-Seok Jung ,  Jongwan Choi ,  Tae-Jong Han

发明人： Jiwoon Im ,  Kwangchul Park ,  Jiyoun Seo ,  Jongmyeong Lee ,  Kyung-Tae Jang ,  Byungho Chun ,  Won-Seok Jung ,  Jongwan Choi ,  Tae-Jong Han

IPC分类号： H01L21/336 ,  H01L27/11582 ,  H01L27/1157 ,  H01L27/11575 ,  H01L21/768

CPC分类号： H01L27/11582 ,  H01L21/76837 ,  H01L27/1157 ,  H01L27/11575

摘要： A method for fabricating a semiconductor device includes forming a stacked structure on a substrate, forming a first interlayer dielectric covering the stacked structure, and forming a second interlayer dielectric covering the first interlayer dielectric. The stacked structure includes a stepwise shape. The first interlayer dielectric includes at least one step portion having a slope surface connecting a first top surface to a second top surface. The first top surface and the sloped surface define a first angle that is an obtuse angle. A level of the second top surface is higher than a level of the first top surface.

公开(公告)号：US10734403B2

公开(公告)日：2020-08-04

申请号：US15991309

申请日：2018-05-29

申请人： Taeyong Eom ,  Jiwoon Im ,  Byungsun Park ,  Hyunseok Lim ,  Yu Seon Kang ,  Hyukho Kwon ,  Sungjin Park ,  Jiyoun Seo ,  Dong Hyeop Ha

发明人： Taeyong Eom ,  Jiwoon Im ,  Byungsun Park ,  Hyunseok Lim ,  Yu Seon Kang ,  Hyukho Kwon ,  Sungjin Park ,  Jiyoun Seo ,  Dong Hyeop Ha

IPC分类号： H01L27/11582 ,  G11C16/02 ,  H01L27/11543 ,  H01L27/1157

摘要： Nonvolatile memory devices and methods of fabricating the nonvolatile memory devices are provided. The nonvolatile memory devices may include a stacked structure including a plurality of conductive films and a plurality of interlayer insulating films stacked in an alternate sequence on a substrate and a vertical channel structure extending through the stacked structure. The plurality of conductive films may include a selection line that is closest to the substrate among the plurality of conductive films. The selection line may include a lower portion and an upper portion sequentially stacked on the substrate, and a side of the upper portion of the selection line and a side of the lower portion of the selection line may have different profiles.

公开(公告)号：US20190081067A1

公开(公告)日：2019-03-14

申请号：US15991309

申请日：2018-05-29

申请人： Taeyong EOM ,  Jiwoon Im ,  Byungsun Park ,  Hyunseok Lim ,  Yu Seon Kang ,  Hyukho Kwon ,  Sungjin Park ,  Jiyoun Seo ,  Dong Hyeop Ha

发明人： Taeyong EOM ,  Jiwoon Im ,  Byungsun Park ,  Hyunseok Lim ,  Yu Seon Kang ,  Hyukho Kwon ,  Sungjin Park ,  Jiyoun Seo ,  Dong Hyeop Ha

IPC分类号： H01L27/11582 ,  H01L27/1157 ,  H01L27/11543 ,  G11C16/02

CPC分类号： H01L27/11582 ,  G11C16/02 ,  H01L27/11543 ,  H01L27/1157

摘要： Nonvolatile memory devices and methods of fabricating the nonvolatile memory devices are provided. The nonvolatile memory devices may include a stacked structure including a plurality of conductive films and a plurality of interlayer insulating films stacked in an alternate sequence on a substrate and a vertical channel structure extending through the stacked structure. The plurality of conductive films may include a selection line that is closest to the substrate among the plurality of conductive films. The selection line may include a lower portion and an upper portion sequentially stacked on the substrate, and a side of the upper portion of the selection line and a side of the lower portion of the selection line may have different profiles.

公开(公告)号：US20120012817A1

公开(公告)日：2012-01-19

申请号：US13200363

申请日：2011-09-23

申请人： Seunghun Hong ,  Sung Myung ,  Jiwoon Im ,  Minbaek Lee

发明人： Seunghun Hong ,  Sung Myung ,  Jiwoon Im ,  Minbaek Lee

IPC分类号： H01L29/76 ,  H01L21/336 ,  H01L29/788

CPC分类号： H01L29/792 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/7881 ,  H01L51/0048 ,  H01L51/0541

摘要： A semiconductor device and methods of manufacturing and operating the semiconductor device may be disclosed. The semiconductor device may comprise different nanostructures. The semiconductor device may have a first element formed of nanowires and a second element formed of nanoparticles. The nanowires may be ambipolar carbon nanotubes (CNTs). The first element may be a channel layer. The second element may be a charge trap layer. In this regard, the semiconductor device may be a transistor or a memory device.

摘要翻译： 可以公开半导体器件以及制造和操作半导体器件的方法。 半导体器件可以包括不同的纳米结构。 半导体器件可以具有由纳米线形成的第一元件和由纳米粒子形成的第二元件。 纳米线可以是双极碳纳米管（CNTs）。 第一元件可以是沟道层。 第二元件可以是电荷陷阱层。 在这方面，半导体器件可以是晶体管或存储器件。

公开(公告)号：US08558303B2

公开(公告)日：2013-10-15

申请号：US13200363

申请日：2011-09-23

申请人： Seunghun Hong ,  Sung Myung ,  Jiwoon Im ,  Minbaek Lee

发明人： Seunghun Hong ,  Sung Myung ,  Jiwoon Im ,  Minbaek Lee

IPC分类号： H01L29/788

CPC分类号： H01L29/792 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/7881 ,  H01L51/0048 ,  H01L51/0541

摘要： A semiconductor device and methods of manufacturing and operating the semiconductor device may be disclosed. The semiconductor device may comprise different nanostructures. The semiconductor device may have a first element formed of nanowires and a second element formed of nanoparticles. The nanowires may be ambipolar carbon nanotubes (CNTs). The first element may be a channel layer. The second element may be a charge trap layer. In this regard, the semiconductor device may be a transistor or a memory device.

摘要翻译： 可以公开半导体器件以及制造和操作半导体器件的方法。 半导体器件可以包括不同的纳米结构。 半导体器件可以具有由纳米线形成的第一元件和由纳米粒子形成的第二元件。 纳米线可以是双极碳纳米管（CNTs）。 第一元件可以是沟道层。 第二元件可以是电荷陷阱层。 在这方面，半导体器件可以是晶体管或存储器件。

公开(公告)号：US08063430B2

公开(公告)日：2011-11-22

申请号：US12289055

申请日：2008-10-20

申请人： Seunghun Hong ,  Sung Myung ,  Jiwoon Im ,  Minbaek Lee

发明人： Seunghun Hong ,  Sung Myung ,  Jiwoon Im ,  Minbaek Lee

IPC分类号： H01L29/788

CPC分类号： H01L29/792 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/7881 ,  H01L51/0048 ,  H01L51/0541

摘要： A semiconductor device and methods of manufacturing and operating the semiconductor device may be disclosed. The semiconductor device may comprise different nanostructures. The semiconductor device may have a first element formed of nanowires and a second element formed of nanoparticles. The nanowires may be ambipolar carbon nanotubes (CNTs). The first element may be a channel layer. The second element may be a charge trap layer. In this regard, the semiconductor device may be a transistor or a memory device.

摘要翻译： 可以公开半导体器件以及制造和操作半导体器件的方法。 半导体器件可以包括不同的纳米结构。 半导体器件可以具有由纳米线形成的第一元件和由纳米粒子形成的第二元件。 纳米线可以是双极碳纳米管（CNTs）。 第一元件可以是沟道层。 第二元件可以是电荷陷阱层。 在这方面，半导体器件可以是晶体管或存储器件。

公开(公告)号：US20090101962A1

公开(公告)日：2009-04-23

申请号：US12289055

申请日：2008-10-20

申请人： Seunghun Hong ,  Sung Myung ,  Jiwoon Im ,  Minbaek Lee

发明人： Seunghun Hong ,  Sung Myung ,  Jiwoon Im ,  Minbaek Lee

IPC分类号： H01L29/768 ,  H01L21/336

CPC分类号： H01L29/792 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/7881 ,  H01L51/0048 ,  H01L51/0541

摘要： A semiconductor device and methods of manufacturing and operating the semiconductor device may be disclosed. The semiconductor device may comprise different nanostructures. The semiconductor device may have a first element formed of nanowires and a second element formed of nanoparticles. The nanowires may be ambipolar carbon nanotubes (CNTs). The first element may be a channel layer. The second element may be a charge trap layer. In this regard, the semiconductor device may be a transistor or a memory device.

摘要翻译： 可以公开半导体器件以及制造和操作半导体器件的方法。 半导体器件可以包括不同的纳米结构。 半导体器件可以具有由纳米线形成的第一元件和由纳米粒子形成的第二元件。 纳米线可以是双极碳纳米管（CNTs）。 第一元件可以是沟道层。 第二元件可以是电荷陷阱层。 在这方面，半导体器件可以是晶体管或存储器件。