公开(公告)号：US20230399769A1

公开(公告)日：2023-12-14

申请号：US17928604

申请日：2021-12-08

申请人： CERACOMP CO., LTD.

发明人： Ho Yong LEE ,  Won Sun BAICK ,  Dong Ho KIM ,  Moon Chan KIM

IPC分类号： C30B29/32 ,  C01G33/00 ,  C08K3/22 ,  H10N30/853 ,  H10N30/097 ,  C30B29/30 ,  C30B1/12

CPC分类号： C30B29/32 ,  C01G33/006 ,  C08K3/22 ,  H10N30/8536 ,  H10N30/097 ,  C30B29/30 ,  C30B1/12 ,  C01P2002/52 ,  C01P2002/34 ,  C01P2006/40 ,  C08K2003/2244 ,  C08K2201/001

摘要： Provided is a piezoelectric single crystal, a method of manufacturing the piezoelectric single crystal, and piezoelectric and dielectric application components using the piezoelectric single crystal. The piezoelectric single crystal shows that characteristics of the piezoelectric single crystal are maximized through the control of composition concerning ions located at [A] from a perovskite type crystal structure ([A][B]O3), the single crystal of uniform composition can be provided without a composition gradient even in case of complex, chemical composition thanks to a solid phase single crystal growth method, and in particular, the piezoelectric single crystal is provided in a form which causes large resistance to a mechanical impact, and facilitates mechanical processing, so the piezoelectric single crystal can usefully be applied to the piezoelectric application component and the dielectric application component, like ultrasonic transducers, piezoelectric actuators, piezoelectric sensor, dielectric capacitors, using the piezoelectric single crystal pertain.

公开(公告)号：US12031232B2

公开(公告)日：2024-07-09

申请号：US17928604

申请日：2021-12-08

申请人： CERACOMP CO., LTD.

发明人： Ho Yong Lee ,  Won Sun Baick ,  Dong Ho Kim ,  Moon Chan Kim

IPC分类号： C30B29/32 ,  C01G33/00 ,  C08K3/22 ,  C30B1/12 ,  C30B29/30 ,  H10N30/097 ,  H10N30/85 ,  H10N30/853

CPC分类号： C30B29/32 ,  C01G33/006 ,  C08K3/22 ,  C30B1/12 ,  C30B29/30 ,  H10N30/097 ,  H10N30/8536 ,  C01P2002/34 ,  C01P2002/52 ,  C01P2006/40 ,  C08K2003/2244 ,  C08K2201/001

摘要： Provided is a piezoelectric single crystal, a method of manufacturing the piezoelectric single crystal, and piezoelectric and dielectric application components using the piezoelectric single crystal. The piezoelectric single crystal shows that characteristics of the piezoelectric single crystal are maximized through the control of composition concerning ions located at [A] from a perovskite type crystal structure ([A][B]O3), the single crystal of uniform composition can be provided without a composition gradient even in case of complex, chemical composition thanks to a solid phase single crystal growth method, and in particular, the piezoelectric single crystal is provided in a form which causes large resistance to a mechanical impact, and facilitates mechanical processing, so the piezoelectric single crystal can usefully be applied to the piezoelectric application component and the dielectric application component, like ultrasonic transducers, piezoelectric actuators, piezoelectric sensor, dielectric capacitors, using the piezoelectric single crystal pertain.

公开(公告)号：US20230088567A1

公开(公告)日：2023-03-23

申请号：US18071535

申请日：2022-11-29

申请人： CERACOMP CO., LTD.

发明人： Ho Yong LEE ,  Won Sun BAICK ,  Dong Ho KIM ,  Moon Chan KIM

IPC分类号： A61H23/02 ,  B06B1/06

摘要： Provided is an electric field-vibration generating transducer having a piezoelectric material of a high degree of displacement, and a manufacturing method thereof. The electric field-vibration generating transducer lowers the cost of production through miniaturization simultaneously with realizing excellent generating characteristics of the electric field-vibration generating transducer based on high efficiency and low voltage driving because the piezoelectric material of the high degree of displacement (high strain piezoelectrics) having a high piezoelectric constant (d33=1,000 to 6,000 pC/N), a high dielectric constant (K3T=6,000 to 15,000) as well as a low dielectric loss (tan δ

公开(公告)号：US20230247908A1

公开(公告)日：2023-08-03

申请号：US18007965

申请日：2021-12-08

申请人： CERACOMP CO., LTD.

发明人： Ho Yong LEE ,  Won Sun BAICK ,  Dong Ho KIM ,  Hyun Jae JOO

IPC分类号： H10N30/85 ,  H10N30/092 ,  C04B35/488 ,  C04B35/626 ,  C04B35/64

CPC分类号： H10N30/852 ,  H10N30/092 ,  C04B35/488 ,  C04B35/6261 ,  C04B35/64 ,  C04B2235/3249 ,  C04B2235/3206 ,  C04B2235/768 ,  C04B2235/786 ,  C04B2235/783 ,  C04B2235/9607 ,  C04B2235/6567 ,  C04B2235/6562

摘要： Provided is a piezoelectric single crystal-polycrystal ceramic composite, a method of manufacturing the same, and piezoelectric and dielectric application components using the piezoelectric single crystal-polycrystal ceramic composite. The piezoelectric single crystal-polycrystal ceramic composite shows that complexation is carried out by the optimization of a ratio between grain size distributions of a piezoelectric single crystal and polycrystal ceramic grains, and a volume ratio of the contained piezoelectric single crystal so that mass production simultaneously with excellent piezoelectric characteristics of the piezoelectric single crystal can be realized, and the cost of production can be reduced, so the piezoelectric single crystal-polycrystal ceramic composite can be applied to piezoelectric and dielectric application components, like ultrasonic transducers, piezoelectric actuators, piezoelectric sensors, dielectric capacitors, electric field-generating transducers, and electric field and vibration-generating transducers, using the piezoelectric single crystal-polycrystal ceramic composite, and the piezoelectric single crystal-polycrystal ceramic composite can enhance piezoelectric characteristics and competitiveness in prices.

公开(公告)号：US20030015130A1

公开(公告)日：2003-01-23

申请号：US10163526

申请日：2002-06-07

申请人： CERACOMP CO. LTD.

发明人： Ho-Yong Lee ,  Jae-Suk Kim ,  Jong-Bong Lee ,  Tae-Moo Hur ,  Doe-Yeon Kim ,  Nong-Moon Hwang ,  Byoung-Ki Lee ,  Sung-Yoon Chung ,  Suk-Joong L. Kang

IPC分类号： C30B001/00

CPC分类号： C30B11/00 ,  C30B29/32

摘要： The invention relates to a method for growing single crystals of barium titanate nullBaTiO3null and barium titanate solid solutions null(BaxM1-x)(TiyN1-y)O3null. This invention is directed to a method for growing single crystals of barium titanate or barium titanate solid solutions showing the primary and secondary abnormal grain growths with increasing temperature higher than the liquid formation temperature, characterized by comprising the step for a few secondary abnormal grains to continue to grow at a temperature slightly below the critical temperature where the secondary abnormal grain growth starts to occur. The method for growing single crystals of barium titanate or barium titanate solid solutions according to this invention has the advantage of providing an effective low cost in manufacturing process for single crystals by using a conventional heat-treatment process without the need of special equipment. The method for growing single crystals of barium titanate and barium titanate solid solutions according to this invention is also applicable to other material systems showing abnormal grain growth behavior.

摘要翻译： 本发明涉及一种生长钛酸钡[BaTiO3]和钛酸钡固溶体[（BaxM1-x）（TiyN1-y）O3]单晶的方法。 本发明涉及一种用于生长钛酸钡或钛酸钡固体溶液的单晶的方法，其显示出主要和次要的异常晶粒生长，其温度高于液体形成温度，其特征在于包括少量次级异常晶粒继续的步骤 在略低于次生异常晶粒生长开始发生的临界温度的温度下生长。 根据本发明的用于生长钛酸钡或钛酸钡固溶体的单晶的方法具有通过使用常规热处理工艺而不需要特殊设备来提供单晶制造工艺的有效低成本的优点。 根据本发明的用于生长钛酸钡和钛酸钡固溶体的单晶的方法也适用于显示异常晶粒生长行为的其它材料体系。

公开(公告)号：US20230329120A1

公开(公告)日：2023-10-12

申请号：US17928608

申请日：2021-12-08

申请人： CERACOMP CO., LTD.

发明人： Ho Yong LEE ,  Won Sun BAICK ,  Moon Chan KIM ,  Hyun Taek OH ,  Hyun Jae JOO

IPC分类号： H10N30/853 ,  H10N30/074 ,  H10N30/097

CPC分类号： H10N30/8548 ,  H10N30/074 ,  H10N30/097 ,  H10N30/8561

摘要： Provided is a piezoelectric single crystal comprising an internal bias electric field, a method of manufacturing the same, and piezoelectric and dielectric application components using the piezoelectric single crystal. The piezoelectric single crystal shows that as a change in each composition of [A] site ions, [B] site ions and [O] site ions from a perovskite type crystal structure ( [A] [B] O3), and oxygen partial-pressure during heat treatment in terms of a manufacturing process are controlled, while maintaining the inherent high dielectric constant and piezoelectric constant, the high internal bias electric field (EI) characteristic essential for the electrical stability of the piezoelectric single crystal is simultaneously satisfied. Therefore, piezoelectric application components and dielectric application components using the piezoelectric single crystal having excellent characteristics can be used in a wide temperature range and operating voltage conditions.

公开(公告)号：US20040206296A1

公开(公告)日：2004-10-21

申请号：US10845095

申请日：2004-05-14

申请人： CERACOMP CO., LTD.

发明人： Ho-Yong Lee ,  Jong-Bong Lee ,  Tae-Moo Hur

IPC分类号： C30B001/00

CPC分类号： C30B11/00 ,  C30B29/32

摘要： An effective, simple and low-cost a method for growing single crystals of perovskite oxideshaving primary and secondary abnormal grain growths according to temperature condition higher than a determined temperature or an atmosphere of heat treatment, involves a perovskite seed single crystal being adjoined to a polycrystal of perovskite oxides and heating the adjoined combination whereby the seed single crystal grows into the polycrystal at the interface therebetween repressing secondary abnormal grain growths inside the polycrystal. 1) The composition ratio of the polycrystal is controlled and/or the specific component(s) of the polycrystal is(are) added in an excess amount compared to the amount of the component(s) of the original composition of the polycrystal, 2) the heating is performed in the temperature range which is over primary abnormal grain growths completion temperature and below secondary abnormal grain growths activation temperature, whereby the seed single crystal grows continuously.

摘要翻译： 根据高于确定的温度或热处理气氛的温度条件，生长具有初级和次级异常晶粒生长的钙钛矿氧化物单晶的有效的，简单的和低成本的方法包括邻近多晶的钙钛矿种子单晶 的钙钛矿氧化物，并加热相邻的组合，由此种子单晶在其间的界面处生长成多晶体，从而抑制多晶中的次级异常晶粒生长。 1）与多晶原始组成的组分的量相比，控制多晶体的组成比和/或多晶体的特定组分以过量的量添加，2 ）在超过初级异常晶粒生长完成温度并且低于次级异常晶粒生长活化温度的温度范围内进行加热，从而种子单晶连续生长。