公开(公告)号：US09298089B1

公开(公告)日：2016-03-29

申请号：US14340539

申请日：2014-07-24

申请人： Carlos Pina Hernandez ,  Christophe Peroz ,  Stefano Cabrini

发明人： Carlos Pina Hernandez ,  Christophe Peroz ,  Stefano Cabrini

IPC分类号： G03F7/027 ,  G03F7/028 ,  G03F7/20 ,  C08L25/00

CPC分类号： G03F7/0275 ,  C08L25/00 ,  G03F7/0002 ,  G03F7/0047 ,  G03F7/028

摘要： Provided is a composition for resist patterning comprising a thiol; at least one -ene monomer; at least one polymerization initiator; and, optionally, a metal oxide used in an amount of 0.1 to 50 wt. % per weight of the composition; the thiol and -ene monomer are used in a stoichiometric ratio with a refractive index between 1.6 and 1.8. The composition is used in a patterning process wherein the composition is dispensed to the substrate, is covered with a mask, and is cured, e.g., by UV radiation, at room temperature with light having a wavelength in the range of 200 nm to 450 nm. The process may be carried out with thermal annealing.

摘要翻译： 提供了一种抗蚀剂图案化组合物，其包含硫醇; 至少一烯单体; 至少一种聚合引发剂; 和任选地，使用的金属氧化物的量为0.1-50wt。 组合物重量％ 硫醇和烯单体以折射率在1.6和1.8之间的化学计量比使用。 组合物用于图案化过程中，其中将组合物分配到基底，用掩模覆盖，并且在室温下通过UV辐射固化，其中波长在200nm至450nm范围内的光 。 该方法可以用热退火进行。

公开(公告)号：US20130189495A1

公开(公告)日：2013-07-25

申请号：US13877227

申请日：2011-11-07

申请人： Peng-Fei Fu ,  Lingjie Jay Guo ,  Eric Scott Moyer ,  Carlos Pina-Hernandez

发明人： Peng-Fei Fu ,  Lingjie Jay Guo ,  Eric Scott Moyer ,  Carlos Pina-Hernandez

IPC分类号： B05D1/36

CPC分类号： B05D1/36 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/165 ,  G03F7/405 ,  Y10T428/24479 ,  Y10T428/24612

摘要： A simple and practical method that can reduce the feature size of a patterned structure bearing surface hydroxyl groups is described. The patterned structure can be obtained by any patterning technologies, such as photo-lithography, e-beam lithography, nano-imprinting lithography. The method includes: (1) initially converting the hydroxyl or silanol-rich surface into an amine-rich surface with the treatment of an amine agent, preferably a cyclic compound; (2) coating an epoxy material on the top of the patterned structure; (3) forming an extra layer when applied heat via a surface-initiated polymerization; (4) applying an amine coupling agent to regenerate the amine-rich surface; (5) coating an epoxy material on the top of the patterned structure to form the next layer; (6) repeating step 4 and 5 to form multiple layers; This method allows the fabrication of feature sizes of various patterns and contact holes that are difficult to reach by conventional lithographic methods.

摘要翻译： 描述了一种可以减小带有表面羟基的图案结构的特征尺寸的简单实用的方法。 图案化结构可以通过任何图案化技术获得，例如光刻，电子束光刻，纳米压印光刻。 该方法包括：（1）通过处理胺剂，优选环状化合物，首先将羟基或硅烷醇富含表面转化为富含胺的表面; （2）在图案化结构的顶部涂覆环氧树脂材料; （3）通过表面引发聚合施加热量时形成额外的层; （4）施加胺偶联剂以再生富含胺的表面; （5）在图案化结构的顶部涂覆环氧树脂材料以形成下一层; （6）重复步骤4和5以形成多层; 该方法允许制造通过常规光刻方法难以达到的各种图案和接触孔的特征尺寸。

公开(公告)号：US20160109799A1

公开(公告)日：2016-04-21

申请号：US14340539

申请日：2014-07-24

申请人： Carlos Pina Hernandez ,  Christophe Peroz ,  Stefano Cabrini

发明人： Carlos Pina Hernandez ,  Christophe Peroz ,  Stefano Cabrini

IPC分类号： G03F7/027 ,  G03F7/20

CPC分类号： G03F7/0275 ,  C08L25/00 ,  G03F7/0002 ,  G03F7/0047 ,  G03F7/028

摘要： Provided is a composition for resist patterning comprising a thiol; at least one -ene monomer; at least one polymerization initiator; and, optionally, a metal oxide used in an amount of 0.1 to 50 wt. % per weight of the composition; the thiol and -ene monomer are used in a stoichiometric ratio with a refractive index between 1.6 and 1.8. The composition is used in a patterning process wherein the composition is dispensed to the substrate, is covered with a mask, and is cured, e.g., by UV radiation, at room temperature with light having a wavelength in the range of 200 nm to 450 nm. The process may be carried out with thermal annealing.

摘要翻译： 提供了一种抗蚀剂图案化组合物，其包含硫醇; 至少一烯单体; 至少一种聚合引发剂; 和任选地，使用的金属氧化物的量为0.1-50wt。 组合物重量％ 硫醇和烯单体以折射率在1.6和1.8之间的化学计量比使用。 组合物用于图案化过程中，其中将组合物分配到基底，用掩模覆盖，并且在室温下通过UV辐射固化，其中波长在200nm至450nm范围内的光 。 该方法可以用热退火进行。