摘要:
An organic light-emitting device includes an emission layer between first and second electrodes, a first hole transport layer that is between the emission layer and the first electrode and that includes a first hole transport compound and a first electron acceptor, a second hole transport layer that is between the emission layer and first hole transport layer and that includes a second hole transport compound, a third hole transport layer that is between the emission layer and the second hole transport layer and that includes a third hole transport compound and a second electron acceptor, a fourth hole transport layer that is between the emission layer and the third hole transport layer and that includes a fourth hole transport compound, a buffer layer between the emission layer and the fourth hole transport layer, and an electron transport layer that includes a pyrimidine-based compound.
摘要:
An organic light-emitting diode including a substrate; a first electrode on the substrate; a second electrode facing the first electrode; and an emission layer between the first electrode and the second electrode, the emission layer including an anthracene-based compound represented by Formula 1, below, and a condensed ring compound represented by Formula 20, below:
摘要:
An organic light-emitting device includes a first electrode, a second electrode facing the first electrode, a phosphorescent emission layer between the first electrode and the second electrode, and an electron transport layer between the phosphorescent emission layer and the second electrode. The phosphorescent emission layer includes a compound represented by one of Formulae 1a to 1c, and the electron transport layer includes a metal-containing compound and a compound represented by Formula 2.
摘要:
An organic light-emitting diode (“OLED”) device includes an organic light-emitting substrate part and a protective cover part. The organic light-emitting substrate part includes a base substrate and an OLED display portion formed on the base substrate to display an image. The protective cover part includes a first frit glass disposed on the OLED display portion to cover the OLED display portion, and a second frit glass formed around a periphery of the first frit glass. The second frit glass is connected to the first frit glass.
摘要:
The present invention relates to an organic light emitting device and a manufacturing method thereof. The organic light emitting device according to an exemplary embodiment of the present invention includes a first thin film transistor disposed on a substrate, an organic layer disposed on the first thin film transistor, a pixel electrode disposed on the organic layer and connected to the first thin film transistor, a partition disposed on the pixel electrode and the organic layer, and an organic emission layer disposed on the pixel electrode and contacting the partition. The partition has an organic layer exposing hole that exposes a portion of the organic layer and an opening that exposes a portion of the pixel electrode.
摘要:
An organic light-emitting device includes a substrate, a first electrode layer on the substrate, a patterned refractive layer on the first electrode layer, a taper angle between a patterned end of the refractive layer and a surface of the first electrode being about 20 to about 60 degrees, the refractive layer including a material having a different refractive index than at least one of the first electrode layer and an organic light-emitting layer, the organic light-emitting layer that covers the refractive layer and is on the first electrode, the organic light-emitting layer contacting the patterned end of the refractive layer, and a second electrode layer on the organic light-emitting layer.
摘要:
An organic light emitting device includes a substrate including a first region, a second region, a third region, and a fourth region, a thin film structure formed on the substrate, first, second, and third color filters formed on the thin film structure, and respectively disposed in the first, second, and third regions, an insulating layer formed on the first to third color filters and the thin film structure, first, second, third, and fourth translucent members formed on the insulating layer, and respectively disposed in the first, second, third, and fourth regions, first, second, third, and fourth pixel electrodes respectively formed on the first, second, third, and fourth translucent members, an organic light emitting member for emitting white light formed on the first to fourth pixel electrodes; and a common electrode formed on the organic light emitting member.
摘要:
An organic light-emitting diode device and a method of manufacturing the organic light-emitting diode device are disclosed. The organic light-emitting diode device includes a thin film transistor, an anode electrode electrically connected to the thin film transistor, a hole injection layer formed on the anode electrode, an etch-out buffer layer formed on the hole injection layer, the etch-out buffer layer having a first hole that exposes the hole injection layer, a barrier rib formed on the etch-out buffer layer, the barrier rib having a second hole that overlaps the first hole, an organic emission layer formed on a portion of the hole injection layer which is exposed through the first hole and second hole, and a cathode electrode formed on the organic emission layer.
摘要:
A display device includes a pixel having a switch device, a driving device connected to the switch device, and a light emitting element to emit light based on a data signal provided to the driving device, a scanning driver to provide a scanning signal to the switch device, and a data driver to provide the data signal to the driving device in response to the scanning signal. The light emitting element is provided with a forward bias for a display period and with a reverse bias for a non-display period. The reverse bias applied to the light emitting element restores the internal resistance of the light emitting element, thereby releasing the luminance decrease of the light emitting element.
摘要:
A plasma etching method using selective polymer deposition, and a method of forming a contact hole using the plasma etching method are provided. The plasma etching method uses a method of reinforcing an etch mask by selectively depositing polymer on only a photoresist pattern, which is an etch mask. That is, a dielectric film is plasma etched for a predetermined period of time using the photoresist pattern as an etch mask, and polymer is selectively deposited on only the photoresist pattern which is thinned by plasma etching, thereby forming a polymer layer. Following this, the dielectric film is plasma etched using the photoresist pattern and the polymer layer as a mask. Thus, dielectric film etching providing high resolution and an excellent profile can be performed using the thinned photoresist pattern as a mask, and a contact hole and a self-aligned contact hole each having a very high aspect ratio, and a self-aligned contact hole having an excellent profile, can be formed.