公开(公告)号：USRE41632E1

公开(公告)日：2010-09-07

申请号：US11984431

申请日：2007-11-16

Applicant: Kwangjo Hwang ,  Changwook Han

Inventor： Kwangjo Hwang ,  Changwook Han

IPC: G02F1/136 ,  H01L21/302 ,  H01L31/00

CPC classification number: H01L27/1288 ,  G02F1/136227 ,  G02F2001/136231 ,  H01L27/1214 ,  H01L29/66765

Abstract: The present invention discloses a method of manufacturing a liquid crystal display device including a first photolithography process forming a gate electrode on a substrate; a second photolithography process including: a) depositing sequentially a gate insulating layer, first and second semiconductor layers, and a metal layer; b) applying a first photoresist on the metal layer; c) aligning a first photo mask with the substrate; d) light exposing and developing the first photoresist to produce a first photoresist pattern; e) etching the metal layer using a first etchant, the first etchant ashing the first photoresist pattern on a predetermined portion of the metal layer to produce a second photoresist pattern, thereby exposing the predetermined portion of the metal layer; and f) etching the gate insulating layer, the first and second semiconductor layer, and the predetermined portion of the metal layer using a second etchant according to the second photoresist pattern to form source and drain electrodes, an ohmic contact layer, and an active area; a third photolithography process forming a passivation film and a contact hole; and a fourth photolithography process forming a pixel electrode connecting with the drain electrode through the contact hole.

Abstract translation: 本发明公开了一种制造液晶显示装置的方法，该液晶显示装置包括：在基板上形成栅电极的第一光刻工艺; 第二光刻工艺，包括：a）顺序沉积栅极绝缘层，第一和第二半导体层以及金属层; b）在金属层上施加第一光致抗蚀剂; c）将第一光掩模与衬底对准; d）光曝光和显影第一光致抗蚀剂以产生第一光致抗蚀剂图案; e）使用第一蚀刻剂蚀刻所述金属层，所述第一蚀刻剂在所述金属层的预定部分上灰化所述第一光致抗蚀剂图案以产生第二光致抗蚀剂图案，从而暴露所述金属层的预定部分; 以及f）使用根据第二光致抗蚀剂图案的第二蚀刻剂来蚀刻栅极绝缘层，第一和第二半导体层以及金属层的预定部分，以形成源极和漏极，欧姆接触层和有源区 ; 形成钝化膜和接触孔的第三光刻工艺; 以及形成通过接触孔与漏电极连接的像素电极的第四光刻工艺。

公开(公告)号：US08354306B2

公开(公告)日：2013-01-15

申请号：US12591220

申请日：2009-11-12

Applicant: Woochan Kim ,  Byungchul Ahn ,  Changwook Han

Inventor： Woochan Kim ,  Byungchul Ahn ,  Changwook Han

IPC: H01L21/00

CPC classification number: H01L51/56 ,  H01L27/3211 ,  H01L27/3246 ,  H01L51/0013 ,  H05B33/10

Abstract: A method of fabricating an organic light emitting diode display device includes: sequentially forming a thin film transistor (TFT) array, a first electrode, a bank pattern, a spacer, and a first relevant layer on an acceptor substrate; sequentially forming a metal pattern and an organic light emission material layer on a doner substrate; aligning and attaching the acceptor substrate and the doner substrate, and forming the light emission layer by transferring the organic light emission material onto the acceptor substrate by applying power to the metal pattern; and sequentially forming the second relevant layer and the second electrode on the light emission layer-formed acceptor substrate.

Abstract translation: 一种制造有机发光二极管显示装置的方法包括：在受主衬底上依次形成薄膜晶体管（TFT）阵列，第一电极，堤状图案，间隔物和第一相关层; 在二者基体上依次形成金属图案和有机发光材料层; 对接和附接受主基板和二基板，并且通过向金属图案施加电力将有机发光材料转印到受主基板上来形成发光层; 并且在发光层形成的受主基板上依次形成第二相关层和第二电极。

公开(公告)号：US20100291720A1

公开(公告)日：2010-11-18

申请号：US12591220

申请日：2009-11-12

Applicant: Woochan Kim ,  Byungchul Ahn ,  Changwook Han

Inventor： Woochan Kim ,  Byungchul Ahn ,  Changwook Han

IPC: H01L51/40

CPC classification number: H01L51/56 ,  H01L27/3211 ,  H01L27/3246 ,  H01L51/0013 ,  H05B33/10

Abstract: A method of fabricating an organic light emitting diode display device includes: sequentially forming a thin film transistor (TFT) array, a first electrode, a bank pattern, a spacer, and a first relevant layer on an acceptor substrate; sequentially forming a metal pattern and an organic light emission material layer on a doner substrate; aligning and attaching the acceptor substrate and the doner substrate, and forming the light emission layer by transferring the organic light emission material onto the acceptor substrate by applying power to the metal pattern; and sequentially forming the second relevant layer and the second electrode on the light emission layer-formed acceptor substrate.

Abstract translation: 一种制造有机发光二极管显示装置的方法包括：在受主衬底上依次形成薄膜晶体管（TFT）阵列，第一电极，堤状图案，间隔物和第一相关层; 在二者基体上依次形成金属图案和有机发光材料层; 对接和附接受主基板和二基板，并且通过向金属图案施加电力将有机发光材料转印到受主基板上来形成发光层; 并且在发光层形成的受主基板上依次形成第二相关层和第二电极。

公开(公告)号：US06337284B1

公开(公告)日：2002-01-08

申请号：US09580590

申请日：2000-05-30

Applicant: Kwangjo Hwang ,  Changwook Han

Inventor： Kwangjo Hwang ,  Changwook Han

IPC: H01L21302

CPC classification number: H01L27/1288 ,  G02F1/136227 ,  G02F2001/136231 ,  H01L27/1214 ,  H01L29/66765

Abstract: The present invention discloses a method of manufacturing a liquid crystal display device including a first photolithography process forming a gate electrode on a substrate; a second photolithography process including: a) depositing sequentially a gate insulating layer, first and second semiconductor layers, and a metal layer; b) applying a first photoresist on the metal layer; c) aligning a first photo mask with the substrate; d) light exposing and developing the first photoresist to produce a first photoresist pattern; e) etching the metal layer using a first etchant, the first etchant ashing the first photoresist pattern on a predetermined portion of the metal layer to produce a second photoresist pattern, thereby exposing the predetermined portion of the metal layer; and f) etching the gate insulating layer, the first and second semiconductor layer, and the predetermined portion of the metal layer using a second etchant according to the second photoresist pattern to form source and drain electrodes, an ohmic contact layer, and an active area; a third photolithography process forming a passivation film and a contact hole; and a fourth photolithography process forming a pixel electrode connecting with the drain electrode through the contact hole.

Abstract translation: 本发明公开了一种制造液晶显示装置的方法，该液晶显示装置包括：在基板上形成栅电极的第一光刻工艺; 第二光刻工艺，包括：a）顺序沉积栅极绝缘层，第一和第二半导体层以及金属层; b）在金属层上施加第一光致抗蚀剂; c）将第一光掩模与衬底对准; d）光曝光和显影第一光致抗蚀剂以产生第一光致抗蚀剂图案; e）使用第一蚀刻剂蚀刻所述金属层，所述第一蚀刻剂在所述金属层的预定部分上灰化所述第一光致抗蚀剂图案以产生第二光致抗蚀剂图案，从而暴露所述金属层的预定部分; 以及f）使用根据第二光致抗蚀剂图案的第二蚀刻剂来蚀刻栅极绝缘层，第一和第二半导体层以及金属层的预定部分，以形成源极和漏极，欧姆接触层和有源区 ; 形成钝化膜和接触孔的第三光刻工艺; 以及形成通过接触孔与漏电极连接的像素电极的第四光刻工艺。

公开(公告)号：US07932113B1

公开(公告)日：2011-04-26

申请号：US12907689

申请日：2010-10-19

Applicant: Moonky Yee ,  Changwook Han ,  Woochan Kim ,  Yuri Koh

Inventor： Moonky Yee ,  Changwook Han ,  Woochan Kim ,  Yuri Koh

IPC: H01L51/00

CPC classification number: H01L51/0013 ,  H01L27/3211 ,  H01L51/56 ,  H01L2251/552

Abstract: A method of fabricating an OLED display, includes sequentially forming a TFT array, first electrodes, and a first related layer on a first substrate, respectively forming heat-generating elements on second and third substrates, forming a red organic emission pattern on the second substrate, and forming a green organic emission pattern on the third substrate, aligning and attaching the first and second substrates, applying a voltage to heat-generating elements to transfer the red organic emission pattern to red pixel regions, thereby forming red organic emission layers, aligning and attaching the first and third substrates, applying a voltage to the heat-generating elements to transfer the green organic emission pattern to green pixel regions, thereby forming green organic emission layers, entirely depositing a blue organic emission material on the first substrate, thereby forming a blue organic emission layer, and sequentially forming a second related layer and a second electrode on the first substrate.

Abstract translation: 一种制造OLED显示器的方法，包括在第一基板上顺序地形成TFT阵列，第一电极和第一相关层，分别在第二和第三基板上形成发热元件，在第二基板上形成红色有机发射图案 并且在第三基板上形成绿色有机发光图案，使第一和第二基板对准并附着，向发热元件施加电压，将红色有机发光图案转印到红色像素区域，从而形成红色有机发射层， 并且附接第一和第三基板，向发热元件施加电压以将绿色有机发射图案转移到绿色像素区域，从而形成绿色有机发射层，将蓝色有机发射材料全部沉积在第一基板上，由此形成 蓝色有机发光层，并顺序地形成第二相关层和第二电极 e第一底物。

公开(公告)号：US08426861B2

公开(公告)日：2013-04-23

申请号：US13152738

申请日：2011-06-03

Applicant: Hongseok Choi ,  ChangWook Han ,  SungJoon Bae ,  HeeSuk Pang ,  MinSu Kim ,  HwaKyung Kim

Inventor： Hongseok Choi ,  ChangWook Han ,  SungJoon Bae ,  HeeSuk Pang ,  MinSu Kim ,  HwaKyung Kim

IPC: H01L51/54

CPC classification number: H01L27/3258 ,  H01L27/3213

Abstract: The present invention further relates to an OLED device, including R, G, B, and W subpixels. Specifically, the OLED device comprises a substrate; a thin film transistor (TFT) active layer disposed on the substrate, comprising a gate electrode, a gate insulating layer, an active layer, an interlayer insulating layer, a source electrode, and a drain electrode; an overcoat layer disposed over the thin film transistor; and a passivation layer disposed between the thin film transistor and the overcoat layer, wherein the passivation layer is absent in a path of a light or wherein the passivation layer is disposed in the path of the light as a single layer comprising silicon nitride.

Abstract translation: 本发明还涉及一种包括R，G，B和W子像素的OLED器件。 具体地，OLED器件包括衬底; 设置在所述基板上的薄膜晶体管（TFT）有源层，包括栅电极，栅绝缘层，有源层，层间绝缘层，源电极和漏电极; 设置在所述薄膜晶体管上的外涂层; 以及设置在薄膜晶体管和外涂层之间的钝化层，其中钝化层在光路中不存在，或者其中钝化层设置在作为包含氮化硅的单层的光的路径中。

公开(公告)号：US20110111542A1

公开(公告)日：2011-05-12

申请号：US12907689

申请日：2010-10-19

Applicant: Moonky YEE ,  Changwook Han ,  Woochan Kim ,  Yuri Koh

Inventor： Moonky YEE ,  Changwook Han ,  Woochan Kim ,  Yuri Koh

IPC: H01L51/56

CPC classification number: H01L51/0013 ,  H01L27/3211 ,  H01L51/56 ,  H01L2251/552

Abstract: A method of fabricating an OLED display, includes sequentially forming a TFT array, first electrodes, and a first related layer on a first substrate, respectively forming heat-generating elements on second and third substrates, forming a red organic emission pattern on the second substrate, and forming a green organic emission pattern on the third substrate, aligning and attaching the first and second substrates, applying a voltage to heat-generating elements to transfer the red organic emission pattern to red pixel regions, thereby forming red organic emission layers, aligning and attaching the first and third substrates, applying a voltage to the heat-generating elements to transfer the green organic emission pattern to green pixel regions, thereby forming green organic emission layers, entirely depositing a blue organic emission material on the first substrate, thereby forming a blue organic emission layer, and sequentially forming a second related layer and a second electrode on the first substrate.

Abstract translation: 一种制造OLED显示器的方法，包括在第一基板上顺序地形成TFT阵列，第一电极和第一相关层，分别在第二和第三基板上形成发热元件，在第二基板上形成红色有机发射图案 并且在第三基板上形成绿色有机发光图案，使第一和第二基板对准并附着，向发热元件施加电压，将红色有机发光图案转印到红色像素区域，从而形成红色有机发射层， 并且附接第一和第三基板，向发热元件施加电压以将绿色有机发射图案转移到绿色像素区域，从而形成绿色有机发射层，将蓝色有机发射材料全部沉积在第一基板上，由此形成 蓝色有机发光层，并顺序地形成第二相关层和第二电极 e第一底物。

公开(公告)号：USRE40028E1

公开(公告)日：2008-01-22

申请号：US10752486

申请日：2004-01-07

Applicant: Kwangjo Hwang ,  Changwook Han

Inventor： Kwangjo Hwang ,  Changwook Han

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L27/1288 ,  G02F1/136227 ,  G02F2001/136231 ,  H01L27/1214 ,  H01L29/66765

Abstract: The present invention discloses a method of manufacturing a liquid crystal display device including a first photolithography process forming a gate electrode on a substrate; a second photolithography process including: a) depositing sequentially a gate insulating layer, first and second semiconductor layers, and a metal layer; b) applying a first photoresist on the metal layer; c) aligning a first photo mask with the substrate; d) light exposing and developing the first photoresist to produce a first photoresist pattern; e) etching the metal layer using a first etchant, the first etchant ashing the first photoresist pattern on a predetermined portion of the metal layer to produce a second photoresist pattern, thereby exposing the predetermined portion of the metal layer; and f) etching the gate insulating layer, the first and second semiconductor layer, and the predetermined portion of the metal layer using a second etchant according to the second photoresist pattern to form source and drain electrodes, an ohmic contact layer, and an active area; a third photolithography process forming a passivation film and a contact hole; and a fourth photolithography process forming a pixel electrode connecting with the drain electrode through the contact hole.

Abstract translation: 本发明公开了一种制造液晶显示装置的方法，该液晶显示装置包括：在基板上形成栅电极的第一光刻工艺; 第二光刻工艺，包括：a）顺序沉积栅极绝缘层，第一和第二半导体层以及金属层; b）在金属层上施加第一光致抗蚀剂; c）将第一光掩模与衬底对准; d）光曝光和显影第一光致抗蚀剂以产生第一光致抗蚀剂图案; e）使用第一蚀刻剂蚀刻所述金属层，所述第一蚀刻剂在所述金属层的预定部分上灰化所述第一光致抗蚀剂图案以产生第二光致抗蚀剂图案，从而暴露所述金属层的预定部分; 以及f）使用根据第二光致抗蚀剂图案的第二蚀刻剂来蚀刻栅极绝缘层，第一和第二半导体层以及金属层的预定部分，以形成源极和漏极，欧姆接触层和有源区 ; 形成钝化膜和接触孔的第三光刻工艺; 以及形成通过接触孔与漏电极连接的像素电极的第四光刻工艺。