公开(公告)号：US08563964B2

公开(公告)日：2013-10-22

申请号：US13067822

申请日：2011-06-29

申请人： Chao-Hsun Wang ,  Zhen-Yu Li ,  Hao-Chung Kuo

发明人： Chao-Hsun Wang ,  Zhen-Yu Li ,  Hao-Chung Kuo

IPC分类号： H01L29/06

CPC分类号： H01L33/42 ,  H01L33/04 ,  H01L33/32

摘要： A semiconductor light emitting device is disclosed, which comprises: a substrate having a first surface and a second surface; a first semiconductor conductive layer is disposed on the first surface of the substrate; an insert layer is disposed on the first semiconductor conductive layer; an active layer is disposed on the insert layer; a second semiconductor conductive layer is disposed on the active layer; a first electrode is disposed on the second semiconductor conductive layer; and a second electrode is disposed on the second surface of the substrate, in which the electric of the second electrode is opposite to that of the first electrode.

摘要翻译： 公开了一种半导体发光器件，其包括：具有第一表面和第二表面的衬底; 第一半导体导电层设置在基板的第一表面上; 插入层设置在第一半导体导电层上; 活性层设置在插入层上; 第二半导体导电层设置在有源层上; 第一电极设置在第二半导体导电层上; 并且第二电极设置在基板的第二表面上，其中第二电极的电极与第一电极的电极相反。

公开(公告)号：US08829652B2

公开(公告)日：2014-09-09

申请号：US13551068

申请日：2012-07-17

申请人： Chao-Hsun Wang ,  Hao-Chung Kuo

发明人： Chao-Hsun Wang ,  Hao-Chung Kuo

IPC分类号： H01L33/00 ,  H01L29/06

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/08 ,  H01S5/2009 ,  H01S5/3407 ,  H01S5/3416 ,  H01S5/34333

摘要： A light emitting device with graded composition hole tunneling layer is provided. The device comprises a substrate and an n-type semiconductor layer is disposed on the substrate, in which the n-type semiconductor layer comprises a first portion and a second portion. A graded composition hole tunneling layer is disposed on the first portion of the n-type semiconductor layer. An electron blocking layer is disposed on the graded composition hole tunneling layer. A p-type semiconductor layer is disposed on the electron blocking layer. A first electrode is disposed on the p-type semiconductor layer, and a second electrode is disposed on the second portion of the n-type semiconductor layer and is electrical insulated from the first portion of the n-type semiconductor. The graded composition hole tunneling layer is used as the quantum-well to improve the transport efficiency of the holes to increase the light emitting efficiency of the light emitting device.

摘要翻译： 提供了一种具有梯度组成的空穴隧道层的发光器件。 该器件包括衬底，n型半导体层设置在衬底上，其中n型半导体层包括第一部分和第二部分。 在n型半导体层的第一部分上设置有梯度组成的空穴隧穿层。 电子阻挡层设置在梯度组合物空穴隧穿层上。 p型半导体层设置在电子阻挡层上。 第一电极设置在p型半导体层上，第二电极设置在n型半导体层的第二部分上并与n型半导体的第一部分电绝缘。 梯度组成空穴隧道层用作量子阱以提高孔的传输效率，以增加发光器件的发光效率。

公开(公告)号：US20130228806A1

公开(公告)日：2013-09-05

申请号：US13551068

申请日：2012-07-17

申请人： Chao-Hsun WANG ,  Hao-Chung Kuo

发明人： Chao-Hsun WANG ,  Hao-Chung Kuo

IPC分类号： H01L33/40

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/08 ,  H01S5/2009 ,  H01S5/3407 ,  H01S5/3416 ,  H01S5/34333

摘要： A light emitting device with graded composition hole tunneling layer is provided. The device comprises a substrate and an n-type semiconductor layer is disposed on the substrate, in which the n-type semiconductor layer comprises a first portion and a second portion. A graded composition hole tunneling layer is disposed on the first portion of the n-type semiconductor layer. An electron blocking layer is disposed on the graded composition hole tunneling layer. A p-type semiconductor layer is disposed on the electron blocking layer. A first electrode is disposed on the p-type semiconductor layer, and a second electrode is disposed on the second portion of the n-type semiconductor layer and is electrical insulated from the first portion of the n-type semiconductor. The graded composition hole tunneling layer is used as the quantum-well to improve the transport efficiency of the holes to increase the light emitting efficiency of the light emitting device.

摘要翻译： 提供了一种具有梯度组成的空穴隧道层的发光器件。 该器件包括衬底，n型半导体层设置在衬底上，其中n型半导体层包括第一部分和第二部分。 在n型半导体层的第一部分上设置有梯度组成的空穴隧穿层。 电子阻挡层设置在梯度组合物空穴隧穿层上。 p型半导体层设置在电子阻挡层上。 第一电极设置在p型半导体层上，第二电极设置在n型半导体层的第二部分上并与n型半导体的第一部分电绝缘。 梯度组成空穴隧道层用作量子阱以提高孔的传输效率，以增加发光器件的发光效率。

公开(公告)号：US20120273752A1

公开(公告)日：2012-11-01

申请号：US13167406

申请日：2011-06-23

申请人： Chia-Yu LEE ,  Chao-Hsun Wang ,  Ching-Hsueh Chiu ,  Hao-Chung Kuo

发明人： Chia-Yu LEE ,  Chao-Hsun Wang ,  Ching-Hsueh Chiu ,  Hao-Chung Kuo

IPC分类号： H01L33/04

CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32

摘要： The present invention discloses a lateral-epitaxial-overgrowth thin-film LED with a nanoscale-roughened structure and a method for fabricating the same. The lateral-epitaxial-overgrowth thin-film LED with a nanoscale-roughened structure comprises a substrate, a metal bonding layer formed on the substrate, a first electrode formed on the metal bonding layer, a semiconductor structure formed on the first electrode with a lateral-epitaxial-growth technology, and a second electrode formed on the semiconductor structure, wherein a nanoscale-roughened structure is formed on the semiconductor structure except the region covered by the second electrode. The present invention uses lateral epitaxial growth to effectively inhibit the stacking faults and reduce the thread dislocation density in the semiconductor structure to improve the crystallization quality of the light-emitting layer and reduce leakage current. Meanwhile, the surface roughened structure on the semiconductor structure can promote the external quantum efficiency.

摘要翻译： 本发明公开了一种具有纳米尺度粗糙结构的侧向外延生长薄膜LED及其制造方法。 具有纳米尺度粗糙结构的横向外延生长薄膜LED包括基板，形成在基板上的金属粘合层，形成在金属接合层上的第一电极，形成在第一电极上的半导体结构， 外延生长技术和形成在半导体结构上的第二电极，其中除了由第二电极覆盖的区域之外，在半导体结构上形成纳米级粗糙结构。 本发明使用横向外延生长来有效地抑制堆垛层错，并减少半导体结构中的线错位密度，以提高发光层的结晶质量并减少漏电流。 同时，半导体结构上的表面粗糙化结构可以提高外部量子效率。

公开(公告)号：US20120217469A1

公开(公告)日：2012-08-30

申请号：US13067822

申请日：2011-06-29

申请人： Chao-Hsun Wang ,  Zhen-Yu Ll ,  Hao-Chung Kuo

发明人： Chao-Hsun Wang ,  Zhen-Yu Ll ,  Hao-Chung Kuo

IPC分类号： H01L33/04

CPC分类号： H01L33/42 ,  H01L33/04 ,  H01L33/32

摘要： A semiconductor light emitting device is disclosed, which comprises: a substrate having a first surface and a second surface; a first semiconductor conductive layer is disposed on the first surface of the substrate; an insert layer is disposed on the first semiconductor conductive layer; an active layer is disposed on the insert layer; a second semiconductor conductive layer is disposed on the active layer; a first electrode is disposed on the second semiconductor conductive layer; and a second electrode is disposed on the second surface of the substrate, in which the electric of the second electrode is opposite to that of the first electrode.

摘要翻译： 公开了一种半导体发光器件，其包括：具有第一表面和第二表面的衬底; 第一半导体导电层设置在基板的第一表面上; 插入层设置在第一半导体导电层上; 活性层设置在插入层上; 第二半导体导电层设置在有源层上; 第一电极设置在第二半导体导电层上; 并且第二电极设置在基板的第二表面上，其中第二电极的电极与第一电极的电极相反。