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    III-V Group Compound Devices with Improved Efficiency and Droop Rate
    2.
    发明申请
    III-V Group Compound Devices with Improved Efficiency and Droop Rate 有权
    具有提高效率和下降率的III-V组复合器件

    公开(公告)号：US20140077152A1

    公开(公告)日：2014-03-20

    申请号：US13616299

    申请日：2012-09-14

    申请人： Zhen-Yu Li ,  Hon-Way Lin ,  Chung-Pao Lin ,  Hsing-Kuo Hsia ,  Hao-Chung Kuo

    发明人： Zhen-Yu Li ,  Hon-Way Lin ,  Chung-Pao Lin ,  Hsing-Kuo Hsia ,  Hao-Chung Kuo

    IPC分类号： H01L33/06

    CPC分类号： H01L33/06 ,  B82Y20/00 ,  F21K9/00 ,  F21S6/00 ,  F21V3/049 ,  F21V7/22 ,  F21V29/74 ,  F21Y2115/10 ,  F21Y2115/30 ,  H01L21/02458 ,  H01L21/02507 ,  H01L33/0025 ,  H01L33/12 ,  H01L33/145 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/3407 ,  H01S5/34333

    摘要： The present disclosure involves an illumination apparatus. The illumination apparatus includes an n-doped semiconductor compound layer, a p-doped semiconductor compound layer spaced apart from the n-doped semiconductor compound layer, and a multiple-quantum-well (MQW) disposed between the first semiconductor compound layer and the second semiconductor compound layer. The MQW includes a plurality of alternating first and second layers. The first layers of the MQW have substantially uniform thicknesses. The second layers have graded thicknesses with respect to distances from the p-doped semiconductor compound layer. A subset of the second layers located most adjacent to the p-doped semiconductor compound layer is doped with a p-type dopant. The doped second layers have graded doping concentration levels that vary with respect to distances from the p-doped semiconductor layer.

    摘要翻译： 本公开涉及一种照明装置。 照明装置包括n掺杂半导体化合物层，与n掺杂半导体化合物层间隔开的p掺杂半导体化合物层和设置在第一半导体化合物层和第二半导体化合物层之间的多量子阱（MQW） 半导体复合层。 MQW包括多个交替的第一和第二层。 MQW的第一层具有基本均匀的厚度。 第二层相对于与p掺杂半导体化合物层的距离具有渐变厚度。 位于与p掺杂半导体化合物层最相邻的第二层的子集中掺杂有p型掺杂剂。 掺杂的第二层具有相对于从p掺杂半导体层的距离而变化的渐变掺杂浓度水平。

    METHOD OF GROWING A HIGH QUALITY III-V COMPOUND LAYER ON A SILICON SUBSTRATE
    4.
    发明申请
    METHOD OF GROWING A HIGH QUALITY III-V COMPOUND LAYER ON A SILICON SUBSTRATE 有权
    在硅基材上生长高品质III-V复合层的方法

    公开(公告)号：US20130214281A1

    公开(公告)日：2013-08-22

    申请号：US13398954

    申请日：2012-02-17

    申请人： Zhen-Yu Li ,  Hsing-Kuo Hsia ,  Hao-Chung Kuo

    发明人： Zhen-Yu Li ,  Hsing-Kuo Hsia ,  Hao-Chung Kuo

    IPC分类号： H01L29/20 ,  H01L21/20

    CPC分类号： H01L21/0254 ,  H01L21/02052 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0262 ,  H01L29/1075 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787 ,  H01L33/007 ,  H01L33/12

    摘要： The present disclosure involves a method of fabricating a semiconductor device. A surface of a silicon wafer is cleaned. A first buffer layer is then epitaxially grown on the silicon wafer. The first buffer layer contains an aluminum nitride (AlN) material. A second buffer layer is then epitaxially grown on the first buffer layer. The second buffer layer includes a plurality of aluminum gallium nitride (AlxGa1−xN) sub-layers. Each of the sub-layers has a respective value for x that is between 0 and 1. A value of x for each sub-layer is a function of its position within the second buffer layer. A first gallium nitride (GaN) layer is epitaxially grown over the second buffer layer. A third buffer layer is then epitaxially grown over the first GaN layer. A second GaN layer is then epitaxially grown over the third buffer layer.

    摘要翻译： 本公开涉及制造半导体器件的方法。 清洁硅晶片的表面。 然后在硅晶片上外延生长第一缓冲层。 第一缓冲层含有氮化铝（AlN）材料。 然后在第一缓冲层上外延生长第二缓冲层。 第二缓冲层包括多个氮化镓铝（Al x Ga 1-x N）子层。 每个子层具有在0和1之间的x的相应值。每个子层的x的值是其在第二缓冲层内的位置的函数。 在第二缓冲层上外延生长第一氮化镓（GaN）层。 然后在第一GaN层上外延生长第三缓冲层。 然后在第三缓冲层上外延生长第二GaN层。

    Method for making solar cells with sensitized quantum dots in the form of nanometer metal particles
    5.
    发明授权
    Method for making solar cells with sensitized quantum dots in the form of nanometer metal particles 有权
    用纳米金属颗粒形式制造具有敏化量子点的太阳能电池的方法

    公开(公告)号：US07915068B2

    公开(公告)日：2011-03-29

    申请号：US12076244

    申请日：2008-03-14

    申请人： Meng-Chu Chen ,  Shan-Ming Lan ,  Tsun-Neng Yang ,  Zhen-Yu Li ,  Yu-Han Su ,  Chien-Te Ku ,  Yu-Hsiang Huang

    发明人： Meng-Chu Chen ,  Shan-Ming Lan ,  Tsun-Neng Yang ,  Zhen-Yu Li ,  Yu-Han Su ,  Chien-Te Ku ,  Yu-Hsiang Huang

    IPC分类号： H01L21/00 ,  H01L27/14 ,  H01L31/0232

    CPC分类号： H01G9/20 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/775 ,  Y10S977/776 ,  Y10S977/777 ,  Y10S977/81 ,  Y10S977/948

    摘要： There is disclosed a method for making solar cells with sensitized quantum dots in the form of nanometer metal crystals. Firstly, a first substrate is provided. Then, a silicon-based film is grown on a side of the first substrate. A pattern mask process is executed to etch areas of the silicon-based film. Nanometer metal particles are provided on areas of the first substrate exposed from the silicon-based film. A metal electrode is attached to an opposite side of the first substrate. A second substrate is provided. A transparent conductive film is grown on the second substrate. A metal catalytic film is grown on the transparent conductive film. The second substrate, the transparent conductive film and the metal catalytic film together form a laminate. The laminate is inverted and provided on the first substrate. Finally, electrolyte is provided between the first substrate and the metal catalytic film.

    摘要翻译： 公开了以纳米金属晶体的形式制造具有致敏量子点的太阳能电池的方法。 首先，提供第一基板。 然后，在第一基板的一侧上生长硅基膜。 执行图案掩模处理以蚀刻硅基膜的区域。 在从硅基膜暴露的第一基板的区域上设置纳米金属颗粒。 金属电极附接到第一基板的相对侧。 提供第二基板。 在第二基板上生长透明导电膜。 在透明导电膜上生长金属催化膜。 第二基板，透明导电膜和金属催化膜一起形成层压体。 将层压体倒置并设置在第一基板上。 最后，在第一基板和金属催化膜之间提供电解质。

    NANO-PATTERNED SUBSTRATE AND EPITAXIAL STRUCTURE
    6.
    发明申请
    NANO-PATTERNED SUBSTRATE AND EPITAXIAL STRUCTURE 审中-公开
    纳米图案和外延结构

    公开(公告)号：US20110024880A1

    公开(公告)日：2011-02-03

    申请号：US12846364

    申请日：2010-07-29

    申请人： Zhen-Yu Li ,  Ching-Hua Chiu ,  Hao-Chung Kuo ,  Tien-Chang Lu

    发明人： Zhen-Yu Li ,  Ching-Hua Chiu ,  Hao-Chung Kuo ,  Tien-Chang Lu

    IPC分类号： H01L29/06 ,  H01L21/20

    CPC分类号： H01L33/24 ,  H01L21/02439 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/22

    摘要： A nano-patterned substrate includes a plurality of nano-particles or nanopillars on an upper surface thereof. A ratio of height to diameter of each of the nano-particles or each of the nanopillars is either greater than or equal to 1. Particularly, a ratio of height to diameter of the nanopillars is greater than or equal to 5. Each of the nano-particles or each of the nanopillars has an arc-shaped top surface. When an epitaxial growth process is applied onto the nano-patterned substrate to form an epitaxial layer, the epitaxial layer has very low defect density. Thus, a production yield of fabricating the subsequent device can be improved.

    摘要翻译： 纳米图案基板在其上表面上包括多个纳米颗粒或纳米柱。 每个纳米颗粒或每个纳米颗粒的高度与直径的比率大于或等于1.特别地，纳米柱的高度与直径之比大于或等于5.每个纳米颗粒 颗粒或每个纳米柱具有弧形顶表面。 当将外延生长工艺施加到纳米图案化衬底上以形成外延层时，外延层具有非常低的缺陷密度。 因此，可以提高制造后续装置的产量。

    Light emitting semiconductor device
    8.
    发明授权
    Light emitting semiconductor device 有权
    发光半导体器件

    公开(公告)号：US08563964B2

    公开(公告)日：2013-10-22

    申请号：US13067822

    申请日：2011-06-29

    申请人： Chao-Hsun Wang ,  Zhen-Yu Li ,  Hao-Chung Kuo

    发明人： Chao-Hsun Wang ,  Zhen-Yu Li ,  Hao-Chung Kuo

    IPC分类号： H01L29/06

    CPC分类号： H01L33/42 ,  H01L33/04 ,  H01L33/32

    摘要： A semiconductor light emitting device is disclosed, which comprises: a substrate having a first surface and a second surface; a first semiconductor conductive layer is disposed on the first surface of the substrate; an insert layer is disposed on the first semiconductor conductive layer; an active layer is disposed on the insert layer; a second semiconductor conductive layer is disposed on the active layer; a first electrode is disposed on the second semiconductor conductive layer; and a second electrode is disposed on the second surface of the substrate, in which the electric of the second electrode is opposite to that of the first electrode.

    摘要翻译： 公开了一种半导体发光器件，其包括：具有第一表面和第二表面的衬底; 第一半导体导电层设置在基板的第一表面上; 插入层设置在第一半导体导电层上; 活性层设置在插入层上; 第二半导体导电层设置在有源层上; 第一电极设置在第二半导体导电层上; 并且第二电极设置在基板的第二表面上，其中第二电极的电极与第一电极的电极相反。