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公开(公告)号:US20120138930A1
公开(公告)日:2012-06-07
申请号:US13076507
申请日:2011-03-31
申请人: Ching-Lin Fan , Yu-Zuo Lin , Chao-Hung Huang
发明人: Ching-Lin Fan , Yu-Zuo Lin , Chao-Hung Huang
CPC分类号: H01L51/0529 , H01L51/0541 , H01L51/102
摘要: An organic thin field transistor is disclosed. The organic thin field transistor includes a first and a second insulting layers, a metal structure and an organic layer serving as an active layer. Materials of the first and the second insulting layers are different, and by performing an etching process, a surface of the metal structure and a surface of the second insulting layer are effectively aligned. Because of the high flatness of the surface of the metal structure and the second insulting layer, a continuous film-forming property and crystallinity of the active layer of the organic thin field transistor are improved, so as to achieve a better the electrical characteristic.
摘要翻译: 公开了一种有机薄场晶体管。 有机薄场晶体管包括第一和第二绝缘层,金属结构和用作有源层的有机层。 第一和第二绝缘层的材料是不同的,并且通过进行蚀刻工艺,金属结构的表面和第二绝缘层的表面被有效地对准。 由于金属结构和第二绝缘层的表面的平坦度高,有机薄膜晶体管的有源层的连续成膜性和结晶度得到改善,从而获得更好的电特性。
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公开(公告)号:US08405081B2
公开(公告)日:2013-03-26
申请号:US13076507
申请日:2011-03-31
申请人: Ching-Lin Fan , Yu-Zuo Lin , Chao-Hung Huang
发明人: Ching-Lin Fan , Yu-Zuo Lin , Chao-Hung Huang
IPC分类号: H01L29/04 , H01L29/10 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L29/08 , H01L35/24 , H01L51/00 , H01L29/76 , H01L31/112 , H01L29/15 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号: H01L51/0529 , H01L51/0541 , H01L51/102
摘要: An organic thin field transistor is disclosed. The organic thin field transistor includes a first and a second insulting layers, a metal structure and an organic layer serving as an active layer. Materials of the first and the second insulting layers are different, and by performing an etching process, a surface of the metal structure and a surface of the second insulting layer are effectively aligned. Because of the high flatness of the surface of the metal structure and the second insulting layer, a continuous film-forming property and crystallinity of the active layer of the organic thin field transistor are improved, so as to achieve a better the electrical characteristic.
摘要翻译: 公开了一种有机薄场晶体管。 有机薄场晶体管包括第一和第二绝缘层,金属结构和用作有源层的有机层。 第一和第二绝缘层的材料是不同的,并且通过进行蚀刻工艺,金属结构的表面和第二绝缘层的表面被有效地对准。 由于金属结构和第二绝缘层的表面的平坦度高,有机薄膜晶体管的有源层的连续成膜性和结晶度得到改善,从而获得更好的电特性。
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