公开(公告)号：US20120138930A1

公开(公告)日：2012-06-07

申请号：US13076507

申请日：2011-03-31

Applicant: Ching-Lin Fan ,  Yu-Zuo Lin ,  Chao-Hung Huang

Inventor： Ching-Lin Fan ,  Yu-Zuo Lin ,  Chao-Hung Huang

IPC: H01L51/10 ,  H01L51/40

CPC classification number: H01L51/0529 ,  H01L51/0541 ,  H01L51/102

Abstract: An organic thin field transistor is disclosed. The organic thin field transistor includes a first and a second insulting layers, a metal structure and an organic layer serving as an active layer. Materials of the first and the second insulting layers are different, and by performing an etching process, a surface of the metal structure and a surface of the second insulting layer are effectively aligned. Because of the high flatness of the surface of the metal structure and the second insulting layer, a continuous film-forming property and crystallinity of the active layer of the organic thin field transistor are improved, so as to achieve a better the electrical characteristic.

Abstract translation: 公开了一种有机薄场晶体管。 有机薄场晶体管包括第一和第二绝缘层，金属结构和用作有源层的有机层。 第一和第二绝缘层的材料是不同的，并且通过进行蚀刻工艺，金属结构的表面和第二绝缘层的表面被有效地对准。 由于金属结构和第二绝缘层的表面的平坦度高，有机薄膜晶体管的有源层的连续成膜性和结晶度得到改善，从而获得更好的电特性。

公开(公告)号：US08405081B2

公开(公告)日：2013-03-26

申请号：US13076507

申请日：2011-03-31

Applicant: Ching-Lin Fan ,  Yu-Zuo Lin ,  Chao-Hung Huang

Inventor： Ching-Lin Fan ,  Yu-Zuo Lin ,  Chao-Hung Huang

IPC: H01L29/04 ,  H01L29/10 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L29/76 ,  H01L31/112 ,  H01L29/15 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L51/0529 ,  H01L51/0541 ,  H01L51/102

Abstract: An organic thin field transistor is disclosed. The organic thin field transistor includes a first and a second insulting layers, a metal structure and an organic layer serving as an active layer. Materials of the first and the second insulting layers are different, and by performing an etching process, a surface of the metal structure and a surface of the second insulting layer are effectively aligned. Because of the high flatness of the surface of the metal structure and the second insulting layer, a continuous film-forming property and crystallinity of the active layer of the organic thin field transistor are improved, so as to achieve a better the electrical characteristic.

Abstract translation: 公开了一种有机薄场晶体管。 有机薄场晶体管包括第一和第二绝缘层，金属结构和用作有源层的有机层。 第一和第二绝缘层的材料是不同的，并且通过进行蚀刻工艺，金属结构的表面和第二绝缘层的表面被有效地对准。 由于金属结构和第二绝缘层的表面的平坦度高，有机薄膜晶体管的有源层的连续成膜性和结晶度得到改善，从而获得更好的电特性。