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公开(公告)号：US08492231B2
公开(公告)日：2013-07-23
申请号：US12666090
申请日：2008-06-25
IPC分类号： H01L21/336
CPC分类号： H01L29/775 , B82Y99/00 , H01L29/0665 , H01L29/068 , H01L49/006 , H03K17/687
摘要： A nanoscale variable resistor including a metal nanowire as an active element, a dielectric, and a gate. By selective application of a gate voltage, stochastic transitions between different conducting states, and even length, of the nanowire can be induced and with a switching time as fast as picoseconds. With an appropriate choice of dielectric, the transconductance of the device, which may also be considered an “electromechanical transistor,” is shown to significantly exceed the conductance quantum G0=2e2/h.
摘要翻译： 包括金属纳米线作为有源元件的纳米级可变电阻器，电介质和栅极。 通过选择性地施加栅极电压，可以诱导纳米线的不同导通状态和均匀长度之间的随机跃迁，并且具有如皮秒那样快的切换时间。 通过适当的介电选择，器件的跨导（也可以被认为是“机电晶体管”）显示超过电导量G0 = 2e2 / h。
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公开(公告)号：US07786472B2
公开(公告)日：2010-08-31
申请号：US11688769
申请日：2007-03-20
IPC分类号： H01L51/00
CPC分类号： H01L51/0504 , B82Y10/00 , H01L51/0595 , Y10S977/709
摘要： A molecular-based switching device and method for controlling charge transport across a molecule. The molecular-based switching device includes a molecule having first and second nodes in between which destructive quantum interference restricts electrical conduction from the first node to the second node in an off-state, a first electrode connected to the first node and configured to supply charge carriers to the first node, a second electrode connected to the second node and configured to remove the charge carriers from the second node, and a control element configured to reduce coherence in or alter charge transport paths between the first and second nodes so as to reduce existing destructive quantum interference and permit flow of the charge carriers from the first node to the second node. The method applies an electric potential between the first and second electrodes, controls coherence in charge transport paths between the first and second nodes so as to maintain or reduce destructive interference between the first and second nodes of the molecule, and injects charge carriers from the first electrode into the first node and collects the charge carriers from the second node at the second electrode when the coherence is controlled to reduce destructive interference.
摘要翻译： 用于控制跨分子的电荷转运的基于分子的开关装置和方法。 基于分子的开关装置包括具有第一和第二节点的分子，其间的破坏性量子干涉在关闭状态下限制从第一节点到第二节点的电传导，第一电极连接到第一节点并且被配置为提供电荷 载体到第一节点，连接到第二节点并被配置为从第二节点去除电荷载流子的第二电极以及被配置为减少第一和第二节点之间的电荷传输路径中的相干性或改变电荷传输路径的控制元件，以便减少 现有的破坏性量子干扰并且允许电荷载体从第一节点到第二节点的流动。 该方法在第一和第二电极之间施加电位，控制第一和第二节点之间的电荷传输路径中的相干性，以便维持或减少分子的第一和第二节点之间的破坏性干扰，并从第一和第二节点注入电荷载流子 电极进入第一节点，并且当相关性被控制以减少破坏性干扰时，从第二电极处的第二节点收集电荷载体。
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公开(公告)号：US20110260775A1
公开(公告)日：2011-10-27
申请号：US12666090
申请日：2008-06-25
IPC分类号： H01L29/775 , H03K17/687 , B82Y99/00
CPC分类号： H01L29/775 , B82Y99/00 , H01L29/0665 , H01L29/068 , H01L49/006 , H03K17/687
摘要： A nanoscale variable resistor including a metal nanowire as an active element, a dielectric, and a gate. By selective application of a gate voltage, stochastic transitions between different conducting states, and even length, of the nanowire can be induced and with a switching time as fast as picoseconds. With an appropriate choice of dielectric, the transconductance of the device, which may also be considered an “electromechanical transistor,” is shown to significantly exceed the conductance quantum G0=2e2/h.
摘要翻译： 包括金属纳米线作为有源元件的纳米级可变电阻器，电介质和栅极。 通过选择性地施加栅极电压，可以诱导纳米线的不同导通状态和均匀长度之间的随机跃迁，并且具有如皮秒那样快的切换时间。 通过适当的介电选择，器件的跨导（也可以被认为是“机电晶体管”）显示超过电导量G0 = 2e2 / h。
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