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公开(公告)号：US20160118290A1
公开(公告)日：2016-04-28
申请号：US14893752
申请日：2014-06-26
IPC分类号： H01L21/687 , H01L21/67
CPC分类号： H01L21/68728 , H01L21/02057 , H01L21/30604 , H01L21/67023 , H01L21/6719
摘要： A processing chamber includes a base, a cover, and grippers. The base includes a body, a mating surface, an inner zone cavity extending into the body, a divider substantially surrounding the inner zone cavity, and an outer zone cavity extending into the body and substantially surrounding the divider. The cover includes a mating surface that contacts the body mating surface when the processing chamber is closed. The grippers hold the wafer in the inner zone cavity when the processing chamber is closed.
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公开(公告)号：US20140352738A1
公开(公告)日：2014-12-04
申请号：US14289017
申请日：2014-05-28
IPC分类号： H01L21/67
CPC分类号： H01L21/67051
摘要： A liquid dispenser for a wafer processing system includes a supply tube with an inlet at one end and an outlet at the other end. Attached to the supply tube at the outlet end is a liquid reservoir. The liquid reservoir has a dispensing plate that has an outlet for dispensing liquid onto a wafer. There is also a dispensing valve for controlling the dispensing of the liquid.
摘要翻译： 用于晶片处理系统的液体分配器包括在一端具有入口并在另一端具有出口的供给管。 在出口端连接到供应管是液体储存器。 液体储存器具有分配板，该分配板具有用于将液体分配到晶片上的出口。 还有一个用于控制液体分配的分配阀。
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公开(公告)号：US20140352735A1
公开(公告)日：2014-12-04
申请号：US14288991
申请日：2014-05-28
IPC分类号： H01L21/67
CPC分类号： H01L21/67051
摘要： A wafer cleaning method includes dispensing liquid chemicals at two flow rates to start a chemical reaction, with the second flow rate being lower than the first. The method also includes dispensing liquid waters at two flow rates to stop a chemical reaction, with the second flow rate being lower than the first.
摘要翻译： 晶片清洗方法包括以两个流速分配液体化学品以开始化学反应，第二流量低于第一流量。 该方法还包括以两个流速分配液体水以停止化学反应，第二流量低于第一流量。
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公开(公告)号：US4682615A
公开(公告)日：1987-07-28
申请号：US626702
申请日：1984-07-02
IPC分类号： B08B3/02 , C23G3/00 , C30B33/00 , C30B33/10 , H01L21/00 , H01L21/304 , H01L21/306 , B08B3/08
CPC分类号： H01L21/6715 , H01L21/67023 , Y10S134/902
摘要： In a chemical processing system for processing substrates or wafers in the production of electronic devices or integrated circuit chips, a rinsing step of simultaneously thoroughly rinsing the substrate in the processing chamber while the chemical supply lines and chemical spray posts are also being thoroughly rinsed with rinse water directed down a drain and without spraying into the processing chamber by controlling the pressure or rate of flow of rinsing water through the liquid chemical supply lines and chemical spray post passages and orifices so that most of the rinsing water will flow through an open drain valve and down the drain and only a trickle of water is permitted to flow outwardly through the spray orifices of the chemical spray post so that none of the rinsing water with dilute traces of chemical is sprayed onto the substrates in the processing chamber. A separate and dedicated rinsing water spray post or head is provided for directing rinsing water atomized by inert gas such as nitrogen to instantaneously commence rinsing of the wafers in the processing chamber. The liquid chemical spray posts are provided with pipe connections to the chemical supply passages within the spray post to accommodate rinsing water flow through the passages and out through the drain ducts and through an openable drain valve to a drain so that rinsing water may freely flow through the chemical supply lines and chemical supply passages in the chemical spray heads simultaneously with the application of rinsing water from the dedicated rinsing water spray post on the chamber wall.
摘要翻译： 在用于处理生产电子装置或集成电路芯片的基板或晶片的化学处理系统中，冲洗步骤同时彻底冲洗处理室中的基板，同时化学品供应管线和化学喷洒柱也用冲洗完全冲洗 通过控制通过液体化学品供应管线和化学喷雾柱通道和孔口的冲洗水的压力或流量，使得大部分漂洗水流过开放式排水阀 并且在排水口下方，只允许一滴水从外部通过化学喷雾柱的喷孔流出，使得没有一个具有稀释痕量化学物质的漂洗水喷洒到处理室中的基底上。 提供独立和专用的冲洗水喷雾柱或头，用于引导由诸如氮气的惰性气体雾化的漂洗水，以立即开始在处理室中漂洗晶片。 液体化学喷雾柱设置有与喷雾柱内的化学物质供应通道的管道连接，以适应漂洗水流过通道并通过排水管道流出，并通过可打开的排水阀到达排水管，使得冲洗水可以自由地流过 化学喷雾头中的化学品供应管线和化学品供应通道同时从室壁上的专用冲洗水喷雾器施加冲洗水。
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公开(公告)号：US4801335A
公开(公告)日：1989-01-31
申请号：US920516
申请日：1986-12-12
CPC分类号： H01L21/6715 , H01L21/67023
摘要： In a chemical processing system for processing substrates or wafers in the production of electronic devices or integrated circuit chips, a rinsing step of simultaneously thoroughly rinsing the substrate in the processing chamber while the chemical supply lines and chemical spray posts are also being thoroughly rinsed with rinse water directed down a drain and without spraying into the processing chamber by controlling the pressure or rate of flow of rinsing water through the liquid chemical supply lines and chemical spray post passages and orifices so that most of the rinsing water will flow through an open drain valve and down the drain and only a trickle of water is permitted to flow outwardly through the spray orifices of the chemical spray post so that none of the rinsing water with dilute traces of chemical is sprayed onto the substrates in the processing chamber. A separate and dedicated rinsing water spray post or head is provided for directing rinsing water atomized by inert gas such as nitrogen to instantaneously commence rinsing of the wafers in the processing chamber. The liquid chemical spray posts are provided with pipe connections to the chemical supply passages within the spray post to accommodate rinsing water flow through the passage and out through the drain ducts and through an openable drain valve to a drain so that rinsing water may freely flow through the chemical supply lines and chemical supply passages in the chemical spray heads simultaneously with the application of rinsing water from the dedicated rinsing water spray post on the chamber wall.
摘要翻译： 在用于处理生产电子装置或集成电路芯片的基板或晶片的化学处理系统中，冲洗步骤同时彻底冲洗处理室中的基板，同时化学品供应管线和化学喷洒柱也用冲洗完全冲洗 通过控制通过液体化学品供应管线和化学喷雾柱通道和孔口的冲洗水的压力或流量，使得大部分漂洗水流过开放式排水阀 并且在排水口下方，只允许一滴水从外部通过化学喷雾柱的喷孔流出，使得没有一个具有稀释痕量化学物质的漂洗水喷洒到处理室中的基底上。 提供独立和专用的冲洗水喷雾柱或头，用于引导由诸如氮气的惰性气体雾化的漂洗水，以立即开始在处理室中漂洗晶片。 液体化学喷雾柱设置有与喷雾柱内的化学品供应通道的管道连接，以容纳冲洗水流过通道并通过排水管道流出，并通过可打开的排水阀到排水管，使得冲洗水可以自由流过 化学喷雾头中的化学品供应管线和化学品供应通道同时从室壁上的专用冲洗水喷雾器施加冲洗水。
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