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公开(公告)号：US4816081A
公开(公告)日：1989-03-28
申请号：US15247
申请日：1987-02-17
申请人： Jitesh R. Mehta , Don C. Burkman , Cooky Mezaki
发明人： Jitesh R. Mehta , Don C. Burkman , Cooky Mezaki
CPC分类号： H01L21/67034 , F26B7/00 , Y10S134/902
摘要： A process for drying semiconductor wafers or similar substrates maintains the substrates in a static position to avoid the generation of undesired particulate. The substrates are maintained within the apparatus at an angle of approximately 30.degree. from the vertical to facilitate complete drainage of the processing fluid. According to this invention, the substrates are positioned in the chamber of the apparatus at the appropriate angle, the chamber is closed in a fluid tight seal and filled with the processing fluid, until the fluid overflows through a vacuum valve. While maintaining the chamber completely filled, vacuum aspiration is continued to degas the chamber. While continuing vacuum aspiration of the chamber, a vacuum assisted drain valve is opened, and clean dry inert gas is introduced above the draining fluid. The draining step assures that any droplets remain with the draining fluid so that the substrates emerge dry as the fluid drains away. The inert gas flow is discontinued and vacuum aspiration is maintained briefly after the chamber has drained. The vacuum aspiration is discontinued and the chamber is repressurized to essentially ambient pressure prior to opening the chamber to remove the dry substrates.
摘要翻译： 用于干燥半导体晶片或类似基板的方法将基板保持在静止位置，以避免不期望的颗粒的产生。 基板以垂直方向约30°的角度保持在设备内，以便于处理流体的完全排水。 根据本发明，基板以适当的角度定位在设备的腔室中，该腔室以流体密封的方式封闭并且填充有处理流体，直到流体通过真空阀溢出。 在保持腔室完全充满的同时，继续抽真空，使腔室脱气。 在继续真空抽吸室的同时，打开真空辅助排水阀，并且在排出流体上方引入干净的干燥惰性气体。 排水步骤确保任何液滴与排放液体保持一致，使得当液体排出时，基材出现干燥。 惰性气体流动停止，腔室排出后，短时间内保持吸气。 真空抽吸停止，并且在打开腔室之前将腔室再加压至基本环境压力以除去干燥的基底。
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公开(公告)号：US4801335A
公开(公告)日：1989-01-31
申请号：US920516
申请日：1986-12-12
CPC分类号： H01L21/6715 , H01L21/67023
摘要： In a chemical processing system for processing substrates or wafers in the production of electronic devices or integrated circuit chips, a rinsing step of simultaneously thoroughly rinsing the substrate in the processing chamber while the chemical supply lines and chemical spray posts are also being thoroughly rinsed with rinse water directed down a drain and without spraying into the processing chamber by controlling the pressure or rate of flow of rinsing water through the liquid chemical supply lines and chemical spray post passages and orifices so that most of the rinsing water will flow through an open drain valve and down the drain and only a trickle of water is permitted to flow outwardly through the spray orifices of the chemical spray post so that none of the rinsing water with dilute traces of chemical is sprayed onto the substrates in the processing chamber. A separate and dedicated rinsing water spray post or head is provided for directing rinsing water atomized by inert gas such as nitrogen to instantaneously commence rinsing of the wafers in the processing chamber. The liquid chemical spray posts are provided with pipe connections to the chemical supply passages within the spray post to accommodate rinsing water flow through the passage and out through the drain ducts and through an openable drain valve to a drain so that rinsing water may freely flow through the chemical supply lines and chemical supply passages in the chemical spray heads simultaneously with the application of rinsing water from the dedicated rinsing water spray post on the chamber wall.
摘要翻译： 在用于处理生产电子装置或集成电路芯片的基板或晶片的化学处理系统中，冲洗步骤同时彻底冲洗处理室中的基板，同时化学品供应管线和化学喷洒柱也用冲洗完全冲洗 通过控制通过液体化学品供应管线和化学喷雾柱通道和孔口的冲洗水的压力或流量，使得大部分漂洗水流过开放式排水阀 并且在排水口下方，只允许一滴水从外部通过化学喷雾柱的喷孔流出，使得没有一个具有稀释痕量化学物质的漂洗水喷洒到处理室中的基底上。 提供独立和专用的冲洗水喷雾柱或头，用于引导由诸如氮气的惰性气体雾化的漂洗水，以立即开始在处理室中漂洗晶片。 液体化学喷雾柱设置有与喷雾柱内的化学品供应通道的管道连接，以容纳冲洗水流过通道并通过排水管道流出，并通过可打开的排水阀到排水管，使得冲洗水可以自由流过 化学喷雾头中的化学品供应管线和化学品供应通道同时从室壁上的专用冲洗水喷雾器施加冲洗水。
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公开(公告)号：US20160118290A1
公开(公告)日：2016-04-28
申请号：US14893752
申请日：2014-06-26
IPC分类号： H01L21/687 , H01L21/67
CPC分类号： H01L21/68728 , H01L21/02057 , H01L21/30604 , H01L21/67023 , H01L21/6719
摘要： A processing chamber includes a base, a cover, and grippers. The base includes a body, a mating surface, an inner zone cavity extending into the body, a divider substantially surrounding the inner zone cavity, and an outer zone cavity extending into the body and substantially surrounding the divider. The cover includes a mating surface that contacts the body mating surface when the processing chamber is closed. The grippers hold the wafer in the inner zone cavity when the processing chamber is closed.
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公开(公告)号：US20140352738A1
公开(公告)日：2014-12-04
申请号：US14289017
申请日：2014-05-28
IPC分类号： H01L21/67
CPC分类号： H01L21/67051
摘要： A liquid dispenser for a wafer processing system includes a supply tube with an inlet at one end and an outlet at the other end. Attached to the supply tube at the outlet end is a liquid reservoir. The liquid reservoir has a dispensing plate that has an outlet for dispensing liquid onto a wafer. There is also a dispensing valve for controlling the dispensing of the liquid.
摘要翻译： 用于晶片处理系统的液体分配器包括在一端具有入口并在另一端具有出口的供给管。 在出口端连接到供应管是液体储存器。 液体储存器具有分配板，该分配板具有用于将液体分配到晶片上的出口。 还有一个用于控制液体分配的分配阀。
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公开(公告)号：US20140352735A1
公开(公告)日：2014-12-04
申请号：US14288991
申请日：2014-05-28
IPC分类号： H01L21/67
CPC分类号： H01L21/67051
摘要： A wafer cleaning method includes dispensing liquid chemicals at two flow rates to start a chemical reaction, with the second flow rate being lower than the first. The method also includes dispensing liquid waters at two flow rates to stop a chemical reaction, with the second flow rate being lower than the first.
摘要翻译： 晶片清洗方法包括以两个流速分配液体化学品以开始化学反应，第二流量低于第一流量。 该方法还包括以两个流速分配液体水以停止化学反应，第二流量低于第一流量。
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公开(公告)号：US4682615A
公开(公告)日：1987-07-28
申请号：US626702
申请日：1984-07-02
IPC分类号： B08B3/02 , C23G3/00 , C30B33/00 , C30B33/10 , H01L21/00 , H01L21/304 , H01L21/306 , B08B3/08
CPC分类号： H01L21/6715 , H01L21/67023 , Y10S134/902
摘要： In a chemical processing system for processing substrates or wafers in the production of electronic devices or integrated circuit chips, a rinsing step of simultaneously thoroughly rinsing the substrate in the processing chamber while the chemical supply lines and chemical spray posts are also being thoroughly rinsed with rinse water directed down a drain and without spraying into the processing chamber by controlling the pressure or rate of flow of rinsing water through the liquid chemical supply lines and chemical spray post passages and orifices so that most of the rinsing water will flow through an open drain valve and down the drain and only a trickle of water is permitted to flow outwardly through the spray orifices of the chemical spray post so that none of the rinsing water with dilute traces of chemical is sprayed onto the substrates in the processing chamber. A separate and dedicated rinsing water spray post or head is provided for directing rinsing water atomized by inert gas such as nitrogen to instantaneously commence rinsing of the wafers in the processing chamber. The liquid chemical spray posts are provided with pipe connections to the chemical supply passages within the spray post to accommodate rinsing water flow through the passages and out through the drain ducts and through an openable drain valve to a drain so that rinsing water may freely flow through the chemical supply lines and chemical supply passages in the chemical spray heads simultaneously with the application of rinsing water from the dedicated rinsing water spray post on the chamber wall.
摘要翻译： 在用于处理生产电子装置或集成电路芯片的基板或晶片的化学处理系统中，冲洗步骤同时彻底冲洗处理室中的基板，同时化学品供应管线和化学喷洒柱也用冲洗完全冲洗 通过控制通过液体化学品供应管线和化学喷雾柱通道和孔口的冲洗水的压力或流量，使得大部分漂洗水流过开放式排水阀 并且在排水口下方，只允许一滴水从外部通过化学喷雾柱的喷孔流出，使得没有一个具有稀释痕量化学物质的漂洗水喷洒到处理室中的基底上。 提供独立和专用的冲洗水喷雾柱或头，用于引导由诸如氮气的惰性气体雾化的漂洗水，以立即开始在处理室中漂洗晶片。 液体化学喷雾柱设置有与喷雾柱内的化学物质供应通道的管道连接，以适应漂洗水流过通道并通过排水管道流出，并通过可打开的排水阀到达排水管，使得冲洗水可以自由地流过 化学喷雾头中的化学品供应管线和化学品供应通道同时从室壁上的专用冲洗水喷雾器施加冲洗水。
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7.发明授权Method of apparatus for applying chemicals to substrates in an acid processing system 失效在酸处理系统中将化学品施用于基底的设备的方法
公开(公告)号：US4609575A
公开(公告)日：1986-09-02
申请号：US626640
申请日：1984-07-02
申请人： Don C. Burkman
发明人： Don C. Burkman
IPC分类号： C23G3/00 , B01F5/02 , B05B7/08 , C23F1/16 , C23G1/00 , C30B33/00 , C30B33/10 , H01L21/00 , H01L21/306 , B05B13/02 , B05B15/06
CPC分类号： H01L21/6715 , B01F5/0256 , B05B7/0846 , C23F1/16
摘要： In acid processing of substrates, such as silicon wafers in the manufacture of electronic devices, such as integrated circuit chips, the method of mixing separate chemicals together in the processing chambers and as the separate chemicals are sprayed in atomized and directional spray patterns toward and across the surfaces of the substrates, the directional spray patterns emanating from different sources and having oblique directions with respect to each other to traverse each other at the surfaces of the substrates for thorough mixing and immediate application to the wafer faces to accomplish the processing. A vented housing defines the processing chamber with spray posts spaced from each other around the periphery of the housing and mounted on the sidewall and directing atomized liquid chemical sprays toward the center at which the substrates are mounted as to cause the spray patterns to traverse each other as they sweep across the wafers.
摘要翻译： 在诸如集成电路芯片的电子器件的制造中的诸如硅晶片的基底的酸处理中，在处理室中将单独的化学品混合在一起并作为单独的化学品的方法被喷射到朝向和跨过的雾化和定向喷射图案 基板的表面，从不同的源发出并且相对于彼此具有倾斜方向的定向喷射图案在基板的表面上彼此横穿，以充分混合并立即施加到晶片表面以完成处理。 通风的壳体限定处理室，其具有围绕壳体的周边彼此间隔开的喷洒柱，并且安装在侧壁上并将雾化的液体化学喷雾引导到安装基板的中心，以使喷射图案彼此横越 当他们扫过晶圆时。
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