公开(公告)号：US07678616B2

公开(公告)日：2010-03-16

申请号：US12143038

申请日：2008-06-20

申请人： Jiun Hann Sir ,  Chee Koang Chen

发明人： Jiun Hann Sir ,  Chee Koang Chen

IPC分类号： H01L21/44 ,  H01L21/48

CPC分类号： H01L23/36 ,  H01L21/563 ,  H01L23/04 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/16152 ,  H01L2924/16195 ,  H01L2924/00 ,  H01L2224/0401

摘要： An apparatus, method, and system for providing thermal management for an integrated circuit includes a first metallic layer directly placed on a back surface of the integrated circuit. An integrated heat spreader with a substantially cap-like shape is placed over the integrated circuit, with an aperture of a ceiling wall of the integrated heat spreader exposing a back surface of the integrated circuit at least in part. The first metallic layer is directly placed on top of an exterior surface of the ceiling wall of the integrated heat spreader as well as the back surface of the integrated circuit.

摘要翻译： 用于为集成电路提供热管理的装置，方法和系统包括直接放置在集成电路的后表面上的第一金属层。 具有基本上帽状形状的集成散热器放置在集成电路上，集成散热器的顶壁的孔至少部分地暴露集成电路的后表面。 第一金属层直接放置在集成散热器的顶壁的外表面的顶部以及集成电路的背面。

公开(公告)号：US07439618B2

公开(公告)日：2008-10-21

申请号：US11090396

申请日：2005-03-25

申请人： Jiun Hann Sir ,  Chee Koang Chen

发明人： Jiun Hann Sir ,  Chee Koang Chen

IPC分类号： H01L23/34

CPC分类号： H01L23/36 ,  H01L21/563 ,  H01L23/04 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/16152 ,  H01L2924/16195 ,  H01L2924/00 ,  H01L2224/0401

摘要： An apparatus, method, and system for providing thermal management for an integrated circuit includes a first metallic layer directly placed on a back surface of the integrated circuit. An integrated heat spreader with a substantially cap-like shape is placed over the integrated circuit, with an aperture of a ceiling wall of the integrated heat spreader exposing a back surface of the integrated circuit at least in part. The first metallic layer is directly placed on top of an exterior surface of the ceiling wall of the integrated heat spreader as well as the back surface of the integrated circuit.

摘要翻译： 用于为集成电路提供热管理的装置，方法和系统包括直接放置在集成电路的后表面上的第一金属层。 具有基本上帽状形状的集成散热器放置在集成电路上，集成散热器的顶壁的孔至少部分地暴露集成电路的后表面。 第一金属层直接放置在集成散热器的顶壁的外表面的顶部以及集成电路的背面。

公开(公告)号：US20080254573A1

公开(公告)日：2008-10-16

申请号：US12143038

申请日：2008-06-20

申请人： Jiun Hann Sir ,  Chee Koang Chen

发明人： Jiun Hann Sir ,  Chee Koang Chen

IPC分类号： H01L21/00

CPC分类号： H01L23/36 ,  H01L21/563 ,  H01L23/04 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/16152 ,  H01L2924/16195 ,  H01L2924/00 ,  H01L2224/0401

摘要： An apparatus, method, and system for providing thermal management for an integrated circuit includes a first metallic layer directly placed on a back surface of the integrated circuit. An integrated heat spreader with a substantially cap-like shape is placed over the integrated circuit, with an aperture of a ceiling wall of the integrated heat spreader exposing a back surface of the integrated circuit at least in part. The first metallic layer is directly placed on top of an exterior surface of the ceiling wall of the integrated heat spreader as well as the back surface of the integrated circuit.

摘要翻译： 用于为集成电路提供热管理的装置，方法和系统包括直接放置在集成电路的后表面上的第一金属层。 具有基本上帽状形状的集成散热器放置在集成电路上，集成散热器的顶壁的孔至少部分地暴露集成电路的后表面。 第一金属层直接放置在集成散热器的顶壁的外表面的顶部以及集成电路的背面。

公开(公告)号：US07332823B2

公开(公告)日：2008-02-19

申请号：US11300720

申请日：2005-12-15

申请人： Lee Peng Khaw ,  Chee Koang Chen ,  Wooi Aun Tan ,  Tze Yang Hin

发明人： Lee Peng Khaw ,  Chee Koang Chen ,  Wooi Aun Tan ,  Tze Yang Hin

IPC分类号： H01L23/28

CPC分类号： H01L23/3121 ,  H01L23/4334 ,  H01L2924/0002 ,  H01L2924/00

摘要： In one embodiment, the present invention includes a semiconductor package having a substrate, a semiconductor die with a first surface opposing the substrate and a second surface, a metal layer formed on the second surface of the semiconductor die, and a mold layer formed on the substrate. In some embodiments, the mold layer is substantially coplanar with the metal layer to improve package performance. Other embodiments are described and claimed.

摘要翻译： 在一个实施例中，本发明包括具有基板的半导体封装，具有与基板相对的第一表面的半导体管芯和第二表面，形成在半导体管芯的第二表面上的金属层， 基质。 在一些实施例中，模具层与金属层基本共面以提高包装性能。 描述和要求保护其他实施例。