公开(公告)号：US20060180808A1

公开(公告)日：2006-08-17

申请号：US11149158

申请日：2005-06-10

Applicant: Cheng-Chung Hsieh ,  Liang-Ying Huang ,  Tarng-Shiang Hu ,  Cheng-chung Lee

Inventor： Cheng-Chung Hsieh ,  Liang-Ying Huang ,  Tarng-Shiang Hu ,  Cheng-chung Lee

IPC: H01L29/08

CPC classification number: H01L51/107 ,  H01L51/0021 ,  H01L51/0545

Abstract: An organic semiconductor element having multi protection layers and process of making the same are provided. Firstly, forming a first protection layer on the thin film transistor. Next, forming a second protection layer which is thick enough to serve as the photo spacers on said first protection layer. The multi protection layers are then grown on said organic thin film transistor, so as to enable the second protection layer to have the additional function of the photo spacers by the patterning process. Thus the organic thin film transistor can be prevented from being damaged, and achieving the simplification of the manufacturing process and the reduction of the production cost.

Abstract translation: 提供了具有多个保护层的有机半导体元件及其制造方法。 首先，在薄膜晶体管上形成第一保护层。 接下来，形成足够厚以用作所述第一保护层上的光隔离物的第二保护层。 然后在所述有机薄膜晶体管上生长多个保护层，以使得第二保护层能够通过图案化工艺具有光隔离物的附加功能。 因此，可以防止有机薄膜晶体管损坏，实现制造工艺的简化和生产成本的降低。

公开(公告)号：US20080035918A1

公开(公告)日：2008-02-14

申请号：US11878907

申请日：2007-07-27

Applicant: Liang-Ying Huang ,  Jia-Chong Ho ,  Cheng-Chung Lee ,  Tarng-Shiang Hu ,  Wen-Kuei Huang ,  Wei-Ling Lin ,  Cheng-Chung Hsieh

Inventor： Liang-Ying Huang ,  Jia-Chong Ho ,  Cheng-Chung Lee ,  Tarng-Shiang Hu ,  Wen-Kuei Huang ,  Wei-Ling Lin ,  Cheng-Chung Hsieh

IPC: H01L51/10

CPC classification number: H01L51/0022 ,  H01L51/0545 ,  H01L51/055 ,  H01L51/0558

Abstract: An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.

Abstract translation: 对有机薄膜晶体管及其制造方法进行说明。 该方法在衬底上形成栅极层，在衬底上形成绝缘体层，在绝缘体层上形成半导体层，以及在半导体层上限定沟道长度的条带。 在半导体层上丝网印刷电极层，在电极层上涂布钝化层。 通过本发明的方法制造的有机薄膜晶体管具有基板，形成在基板上的栅极层，形成在基板上的绝缘体层，形成在绝缘体层上的半导体层，形成用于限定沟道长度的条带 在半导体层上，丝网印刷在半导体层上的电极层和涂覆在电极层上的钝化层。 由此，得到具有顶接触/底栅结构的有机薄膜晶体管。

公开(公告)号：US20080157070A1

公开(公告)日：2008-07-03

申请号：US12010037

申请日：2008-01-18

Applicant: Cheng-Chung Hsieh ,  Liang-Ying Huang ,  Tarng-Shiang Hu ,  Cheng-Chung Lee

Inventor： Cheng-Chung Hsieh ,  Liang-Ying Huang ,  Tarng-Shiang Hu ,  Cheng-Chung Lee

IPC: H01L51/00

CPC classification number: H01L51/107 ,  H01L51/0021 ,  H01L51/0545

Abstract: An organic semiconductor element having multi protection layers and process of making the same are provided. Firstly, forming a first protection layer on the thin film transistor. Next, forming a second protection layer which is thick enough to serve as the photo spacers on said first protection layer. The multi protection layers are then grown on said organic thin film transistor, so as to enable the second protection layer to have the additional function of the photo spacers by the patterning process. Thus the organic thin film transistor can be prevented from being damaged, and achieving the simplification of the manufacturing process and the reduction of the production cost.

公开(公告)号：US20060186398A1

公开(公告)日：2006-08-24

申请号：US11165346

申请日：2005-06-24

Applicant: Cheng-Chung Hsieh ,  Tarng-Shiang Hu ,  Jia-Chong Ho ,  Cheng-Chung Lee

Inventor： Cheng-Chung Hsieh ,  Tarng-Shiang Hu ,  Jia-Chong Ho ,  Cheng-Chung Lee

IPC: H01L29/08

CPC classification number: H01L51/10 ,  H01L51/0545 ,  H01L51/107

Abstract: An organic semiconductor device with multiple protective layers and the method of making the same are described. A first protective layer is formed by vapor phase deposition on an organic thin-film transistor. A second protective layer is then formed on the first protective layer. Therefore, the organic thin-film transistor is formed with multiple protective layers. Not only do these protective layers have good homogeneity, they can protect the organic thin-film transistor from damages, ensuring good quality.

Abstract translation: 描述了具有多个保护层的有机半导体器件及其制造方法。 通过气相沉积在有机薄膜晶体管上形成第一保护层。 然后在第一保护层上形成第二保护层。 因此，有机薄膜晶体管形成有多个保护层。 这些保护层不仅具有良好的均匀性，它们可以保护有机薄膜晶体管免受损坏，保证质量。

公开(公告)号：US07264989B2

公开(公告)日：2007-09-04

申请号：US10840637

申请日：2004-05-07

Applicant: Liang-Ying Huang ,  Jia-Chong Ho ,  Cheng-Chung Lee ,  Tarng-Shiang Hu ,  Wen-Kuei Huang ,  Wei-Ling Lin ,  Cheng-Chung Hsieh

Inventor： Liang-Ying Huang ,  Jia-Chong Ho ,  Cheng-Chung Lee ,  Tarng-Shiang Hu ,  Wen-Kuei Huang ,  Wei-Ling Lin ,  Cheng-Chung Hsieh

IPC: H01L51/40 ,  H01L21/84

CPC classification number: H01L51/0022 ,  H01L51/0545 ,  H01L51/055 ,  H01L51/0558

Abstract: An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.

Abstract translation: 对有机薄膜晶体管及其制造方法进行说明。 该方法在衬底上形成栅极层，在衬底上形成绝缘体层，在绝缘体层上形成半导体层，以及在半导体层上限定沟道长度的条带。 在半导体层上丝网印刷电极层，在电极层上涂布钝化层。 通过本发明的方法制造的有机薄膜晶体管具有基板，形成在基板上的栅极层，形成在基板上的绝缘体层，形成在绝缘体层上的半导体层，形成用于限定沟道长度的条带 在半导体层上，丝网印刷在半导体层上的电极层和涂覆在电极层上的钝化层。 由此，得到具有顶接触/底栅结构的有机薄膜晶体管。

公开(公告)号：US07125742B2

公开(公告)日：2006-10-24

申请号：US10863212

申请日：2004-06-09

Applicant: Cheng-Chung Hsieh ,  Jia-Chong Ho ,  Tarng-Shiang Hu ,  Cheng-Chung Lee ,  Liang-Ying Huang ,  Wei-Ling Lin ,  Wen-Kuei Huang

Inventor： Cheng-Chung Hsieh ,  Jia-Chong Ho ,  Tarng-Shiang Hu ,  Cheng-Chung Lee ,  Liang-Ying Huang ,  Wei-Ling Lin ,  Wen-Kuei Huang

IPC: H01L51/40 ,  H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L31/062

CPC classification number: H01L51/107 ,  H01L51/0545 ,  H01L51/5237

Abstract: The present invention discloses a multi-passivation layer structure for organic thin-film transistors and a method for fabricating the same by spin coating, inject printing, screen printing and micro-contact on organic thin-film transistors. The multi-passivation layer structure for organic thin-film transistors, comprising: a substrate; a gate layer formed on the substrate; an insulator layer formed on the substrate and the gate layer; an electrode layer formed on the insulator layer; a semiconductor layer formed on the insulator layer and the electrode layer; and a passivation layer formed on the semiconductor layer and the electrode layer, thereby forming a multi-passivation layer structure for organic thin-film transistors.

Abstract translation: 本发明公开了一种有机薄膜晶体管的多钝化层结构及其制造方法，其特征在于，在有机薄膜晶体管上进行旋涂，注入印刷，丝网印刷和微接触。 一种有机薄膜晶体管的多钝化层结构，包括：基板; 形成在所述基板上的栅极层; 形成在所述基板和所述栅极层上的绝缘体层; 形成在所述绝缘体层上的电极层; 形成在绝缘体层和电极层上的半导体层; 以及形成在半导体层和电极层上的钝化层，从而形成有机薄膜晶体管的多钝化层结构。

公开(公告)号：US07495253B2

公开(公告)日：2009-02-24

申请号：US11878907

申请日：2007-07-27

Applicant: Liang-Ying Huang ,  Jia-Chong Ho ,  Cheng-Chung Lee ,  Tarng-Shiang Hu ,  Wen-Kuei Huang ,  Wei-Ling Lin ,  Cheng-Chung Hsieh

Inventor： Liang-Ying Huang ,  Jia-Chong Ho ,  Cheng-Chung Lee ,  Tarng-Shiang Hu ,  Wen-Kuei Huang ,  Wei-Ling Lin ,  Cheng-Chung Hsieh

IPC: H01L51/10

CPC classification number: H01L51/0022 ,  H01L51/0545 ,  H01L51/055 ,  H01L51/0558

Abstract: An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.

Abstract translation: 对有机薄膜晶体管及其制造方法进行说明。 该方法在衬底上形成栅极层，在衬底上形成绝缘体层，在绝缘体层上形成半导体层，以及在半导体层上限定沟道长度的条带。 在半导体层上丝网印刷电极层，在电极层上涂布钝化层。 通过本发明的方法制造的有机薄膜晶体管具有基板，形成在基板上的栅极层，形成在基板上的绝缘体层，形成在绝缘体层上的半导体层，形成用于限定沟道长度的条带 在半导体层上，丝网印刷在半导体层上的电极层和涂覆在电极层上的钝化层。 由此，得到具有顶接触/底栅结构的有机薄膜晶体管。

公开(公告)号：US07344914B2

公开(公告)日：2008-03-18

申请号：US11149158

申请日：2005-06-10

Applicant: Cheng-Chung Hsieh ,  Liang-Ying Huang ,  Tarng-Shiang Hu ,  Cheng-chung Lee

Inventor： Cheng-Chung Hsieh ,  Liang-Ying Huang ,  Tarng-Shiang Hu ,  Cheng-chung Lee

IPC: H01L21/00

CPC classification number: H01L51/107 ,  H01L51/0021 ,  H01L51/0545

Abstract: An organic semiconductor element having multi protection layers and process of making the same are provided. Firstly, forming a first protection layer on the thin film transistor. Next, forming a second protection layer which is thick enough to serve as the photo spacers on said first protection layer. The multi protection layers are then grown on said organic thin film transistor, so as to enable the second protection layer to have the additional function of the photo spacers by the patterning process. Thus the organic thin film transistor can be prevented from being damaged, and achieving the simplification of the manufacturing process and the reduction of the production cost.

Abstract translation: 提供了具有多个保护层的有机半导体元件及其制造方法。 首先，在薄膜晶体管上形成第一保护层。 接下来，形成足够厚以用作所述第一保护层上的光隔离物的第二保护层。 然后在所述有机薄膜晶体管上生长多个保护层，以使得第二保护层能够通过图案化工艺具有光隔离物的附加功能。 因此，可以防止有机薄膜晶体管损坏，实现制造工艺的简化和生产成本的降低。

公开(公告)号：US20050227407A1

公开(公告)日：2005-10-13

申请号：US10863212

申请日：2004-06-09

Applicant: Cheng-Chung Hsieh ,  Jia-Chong Ho ,  Tarng-Shiang Hu ,  Cheng-Chung Lee ,  Liang-Ying Huang ,  Wei-Ling Lin ,  Wen-Kuei Huang

Inventor： Cheng-Chung Hsieh ,  Jia-Chong Ho ,  Tarng-Shiang Hu ,  Cheng-Chung Lee ,  Liang-Ying Huang ,  Wei-Ling Lin ,  Wen-Kuei Huang

IPC: H01L29/786 ,  H01L21/312 ,  H01L21/336 ,  H01L51/05 ,  H01L51/10 ,  H01L51/40 ,  H01L51/52

CPC classification number: H01L51/107 ,  H01L51/0545 ,  H01L51/5237

Abstract: The present invention discloses a multi-passivation layer structure for organic thin-film transistors and a method for fabricating the same by spin coating, inject printing, screen printing and micro-contact on organic thin-film transistors. The multi-passivation layer structure for organic thin-film transistors, comprising: a substrate; a gate layer formed on the substrate; an insulator layer formed on the substrate and the gate layer; an electrode layer formed on the insulator layer; a semiconductor layer formed on the insulator layer and the electrode layer; and a passivation layer formed on the semiconductor layer and the electrode layer, thereby forming a multi-passivation layer structure for organic thin-film transistors.

Abstract translation: 本发明公开了一种有机薄膜晶体管的多钝化层结构及其制造方法，其特征在于，在有机薄膜晶体管上进行旋涂，注入印刷，丝网印刷和微接触。 一种有机薄膜晶体管的多钝化层结构，包括：基板; 形成在所述基板上的栅极层; 形成在所述基板和所述栅极层上的绝缘体层; 形成在所述绝缘体层上的电极层; 形成在绝缘体层和电极层上的半导体层; 以及形成在半导体层和电极层上的钝化层，从而形成有机薄膜晶体管的多钝化层结构。

公开(公告)号：US20050194615A1

公开(公告)日：2005-09-08

申请号：US10840637

申请日：2004-05-07

Applicant: Liang-Ying Huang ,  Jia-Chong Ho ,  Cheng-Chung Lee ,  Tarng-Shiang Hu ,  Wen-Kuei Huang ,  Wei-Ling Lin ,  Cheng-Chung Hsieh

Inventor： Liang-Ying Huang ,  Jia-Chong Ho ,  Cheng-Chung Lee ,  Tarng-Shiang Hu ,  Wen-Kuei Huang ,  Wei-Ling Lin ,  Cheng-Chung Hsieh

IPC: H01L29/417 ,  H01L21/336 ,  H01L29/745 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05 ,  H01L51/40

CPC classification number: H01L51/0022 ,  H01L51/0545 ,  H01L51/055 ,  H01L51/0558

Abstract: An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.

Abstract translation: 对有机薄膜晶体管及其制造方法进行说明。 该方法在衬底上形成栅极层，在衬底上形成绝缘体层，在绝缘体层上形成半导体层，以及在半导体层上限定沟道长度的条带。 在半导体层上丝网印刷电极层，在电极层上涂布钝化层。 通过本发明的方法制造的有机薄膜晶体管具有基板，形成在基板上的栅极层，形成在基板上的绝缘体层，形成在绝缘体层上的半导体层，形成用于限定沟道长度的条带 在半导体层上，丝网印刷在半导体层上的电极层和涂覆在电极层上的钝化层。 由此，得到具有顶接触/底栅结构的有机薄膜晶体管。