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1.发明申请Reduction of Copper or Trace Metal Contaminants in Plasma Electrolytic Oxidation Coatings 有权减少等离子体电解氧化涂层中的铜或微量金属污染物公开(公告)号：US20110297319A1
公开(公告)日：2011-12-08
申请号：US12794470
申请日：2010-06-04
Applicant: Xing Chen , Chengxiang Ji , Chiu-Ying Tai
Inventor： Xing Chen , Chengxiang Ji , Chiu-Ying Tai
IPC: H01L21/306 , C25D11/24 , C25D11/16 , C25D11/04 , C25D11/18
CPC classification number: C25D11/04 , C23C28/321 , C25D5/48 , C25D11/026 , C25D11/16 , H01J37/16 , H01J37/32357 , H01J37/32431 , H01J37/32467
Abstract: A method for creating an oxide layer having a reduced copper concentration over a surface of an object comprising aluminum and copper for use in a semiconductor processing system. The oxide layer produced using a plasma electrolytic oxidation process has a reduced copper peak concentration, which decreases a risk of copper contamination, and includes magnesium oxides that can be converted to magnesium halide upon exposure to an excited halogen-comprising gas or halogen-comprising plasma to increase the erosion/corrosion resistance of the oxide layer.
Abstract translation: 一种在半导体处理系统中用于产生包含铝和铜的物体表面上的铜浓度降低的氧化物层的方法。 使用等离子体电解氧化法生产的氧化物层具有降低的铜峰浓度，这降低了铜污染的风险，并且包括在暴露于含激发的含卤素气体或含卤素的等离子体时可转化为卤化镁的氧化镁 以增加氧化物层的侵蚀/耐腐蚀性。
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2.发明授权Reduction of copper or trace metal contaminants in plasma electrolytic oxidation coatings 有权减少等离子体电解氧化涂层中的铜或痕量金属污染物公开(公告)号：US08888982B2
公开(公告)日：2014-11-18
申请号：US12794470
申请日：2010-06-04
Applicant: Xing Chen , Chengxiang Ji , Chiu-Ying Tai
Inventor： Xing Chen , Chengxiang Ji , Chiu-Ying Tai
CPC classification number: C25D11/04 , C23C28/321 , C25D5/48 , C25D11/026 , C25D11/16 , H01J37/16 , H01J37/32357 , H01J37/32431 , H01J37/32467
Abstract: A method for creating an oxide layer having a reduced copper concentration over a surface of an object comprising aluminum and copper for use in a semiconductor processing system. The oxide layer produced using a plasma electrolytic oxidation process has a reduced copper peak concentration, which decreases a risk of copper contamination, and includes magnesium oxides that can be converted to magnesium halide upon exposure to an excited halogen-comprising gas or halogen-comprising plasma to increase the erosion/corrosion resistance of the oxide layer.
Abstract translation: 一种在半导体处理系统中用于产生包含铝和铜的物体表面上的铜浓度降低的氧化物层的方法。 使用等离子体电解氧化法生产的氧化物层具有降低的铜峰浓度，这降低了铜污染的风险，并且包括在暴露于含激发的含卤素气体或含卤素的等离子体时可转化为卤化镁的氧化镁 以增加氧化物层的侵蚀/耐腐蚀性。
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公开(公告)号：US20130146225A1
公开(公告)日：2013-06-13
申请号：US13314347
申请日：2011-12-08
Applicant: Xing Chen , Youfan Gu , Chengxiang Ji , Paul Ashby Loomis , Ilya Pokidov , Kevin Wayne Wenzel
Inventor： Xing Chen , Youfan Gu , Chengxiang Ji , Paul Ashby Loomis , Ilya Pokidov , Kevin Wayne Wenzel
CPC classification number: H01J37/32449 , C23C16/452 , H01J37/32495
Abstract: A plasma chamber for use with a reactive gas source that includes a first conduit comprising a wall, an inlet, an outlet, an inner and outer surface, and a plurality of openings through the wall, the inlet receives a first gas for generating a reactive gas in the first conduit with a plasma formed in the first conduit. The plasma chamber also includes a second conduit that includes a wall, an inlet, and an inner surface. The first conduit is disposed in the second conduit defining a channel between the outer surface of the first conduit and the inner surface of the second conduit. A second gas provided to the inlet of the second conduit flows along the channel and through the plurality of openings of the wall of the first conduit into the first conduit to surround the reactive gas and plasma in the first conduit.
Abstract translation: 一种与反应性气体源一起使用的等离子体室，其包括第一导管，其包括壁，入口，出口，内部和外部表面以及穿过壁的多个开口，所述入口容纳用于产生反应性的第一气体 第一导管中的气体在第一导管中形成等离子体。 等离子体室还包括第二导管，其包括壁，入口和内表面。 第一导管设置在第二导管中，限定在第一导管的外表面和第二导管的内表面之间的通道。 设置到第二导管入口的第二气体沿着通道流动并且穿过第一导管的壁的多个开口进入第一导管，以围绕第一导管中的反应气体和等离子体。
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