Abstract:
A modular game field bunker system comprises a plurality of interlocking frame pieces and a cover having an aesthetic feature disposed on at least an outer surface thereof. The interlocking frame pieces may be coupled together to form a structure having at least one wall. The structure preferably is fully enclosed by its walls and has an interior region defined therein for receiving a human player. The cover receives and fully covers the structure, and may partially define a doorway for entering and exiting the structure. The aesthetic feature of the cover may make the bunker appear in any of a variety of desired ways so as to customizably match a desired design scenario of the game field.
Abstract:
An exemplary embodiment of the present disclosure illustrates an automated mass production method, adapted for an automated mass production system in manufacturing at least an electronic device having a storage unit, the method includes steps of: determining a protocol type of the Auto Handler to select one of the agents; establishing a first communication protocol communication between the MP tool module and the selected agent; establishing a second communication protocol communication between the selected agent and the Auto Handler; the Auto Handler outputting a processing command to the selected agent; the selected agent converting the processing command into a MP tool module executable MP tool instruction; and the selected agent outputting the corresponding MP tool instruction to the MP tool module so as to have the MP tool module executed the MP tool instruction to automatically perform a corresponding mass production process to the electronic device.
Abstract:
This application discloses a novel process for the preparation of himbacine analogs useful as thrombin receptor antagonists. The process is based in part on the use of a base-promoted dynamic epimerization of a chiral nitro center. The chemistry taught herein can be exemplified by the following:
Abstract:
A method and apparatus for processing metal bearing gases involves generating a toroidal plasma in a plasma chamber. A metal bearing gas is introduced into the plasma chamber to react with the toroidal plasma. The interaction between the toroidal plasma and the metal bearing gas produces at least one of a metallic material, a metal oxide material or a metal nitride material.
Abstract:
A method for creating an oxide layer having a reduced copper concentration over a surface of an object comprising aluminum and copper for use in a semiconductor processing system. The oxide layer produced using a plasma electrolytic oxidation process has a reduced copper peak concentration, which decreases a risk of copper contamination, and includes magnesium oxides that can be converted to magnesium halide upon exposure to an excited halogen-comprising gas or halogen-comprising plasma to increase the erosion/corrosion resistance of the oxide layer.
Abstract:
A method for creating a protective layer over a surface of an object comprising aluminum and magnesium for use in a semiconductor processing system, which includes oxidizing the surface of the object using a plasma electrolytic oxidation process. The method also includes generating a halogen-comprising plasma by exciting a gas comprising a halogen. The method also includes exposing the oxidized surface to the halogen-comprising plasma or excited gas.
Abstract:
A plasma chamber for activating a process gas, including at least four legs forming a toroidal plasma channel, each leg having a cross-sectional area, and an outlet formed on one leg, the outlet having a greater cross-sectional area than the cross-sectional area of the other legs. The plasma chamber further includes an inlet for receiving the process gas and a plenum for introducing the process gas over a broad area of the leg opposing the outlet to reduce localized high plasma impedance and gas flow instability, wherein the leg opposing the outlet defines a plurality of holes for providing a helical gas rotation in the plasma channel.
Abstract:
A system and methods are described for generating reagent ions and product ions for use in a quadrupole mass spectrometry system. A microwave or high-frequency RF energy source ionizes particles of a reagent vapor to form reagent ions. The reagent ions enter a chamber, such as a drift chamber, to interact with a fluid sample. An electric field directs the reagent ions and facilitates an interaction with the fluid sample to form product ions. The reagent ions and product ions then exit the chamber under the influence of an electric field for detection by a quadrupole mass spectrometer module. The system includes various control modules for setting values of system parameters and analysis modules for detection of mass values for ion species during spectrometry and faults within the system.
Abstract:
The present invention relates to a screen of a laptop computer and a laptop computer having the same. And the laptop computer comprises: a back cover; a fixing body mounted on the back cover; a liquid crystal screen mounted on the fixing body; and a cover plate received on the fixing body, wherein the cover plate covers the liquid crystal screen and the fixing unit, and the area of the cover plate corresponding to the liquid crystal screen is transparent. The fixing body comprises a fixing frame and/or supporting member. Each supporting member is connected to a side of the liquid crystal screen. The screen for a laptop computer having a configuration described above has an integral appearance, which not only protects the screen but also makes the screen appear more neat enhancing visual effect of the screen. The present invention also proposes a laptop computer having the above screen so that the computer has an excellent visual appearance in usage, which is more adapted to practical use.
Abstract:
A system for producing excited gases for introduction to a semiconductor processing chamber. The system includes a plasma source for generating a plasma. The plasma source includes a plasma chamber and a gas inlet for receiving process gases from a gas source. A gas flow rate controller is coupled to the gas inlet for controlling an inlet flow rate of the process gases from the gas source to the plasma chamber via the gas inlet. The system includes a control loop for detecting a transition from a first process gas to a second process gas and for adjusting the inlet flow rate of the second process gas from about 0 sccm to about 10,000 sccm over a period of time greater than about 300 milliseconds to maintain transient heat flux loads applied by the plasma to an inner surface of the plasma chamber below a vaporization temperature of the plasma chamber.