公开(公告)号：US07297040B2

公开(公告)日：2007-11-20

申请号：US11517357

申请日：2006-09-08

Applicant: Jung-Fang Chang ,  Chich-Shang Chang ,  Chi-Lin Chen

Inventor： Jung-Fang Chang ,  Chich-Shang Chang ,  Chi-Lin Chen

IPC: H01J9/26

CPC classification number: H01J9/241 ,  G02F1/133305 ,  G02F2001/13613 ,  H01J2217/492

Abstract: A method for manufacturing a flexible panel is disclosed, which has the following steps. First, a first substrate having a plurality of functional switches or conducting lines thereon is provided. Then, a second substrate is bonded on the functional switches or conducting lines, and the first substrate is thinned to a predetermined thickness subsequently. Afterwards, a flexible third substrate is adhered on the first substrate, wherein the first substrate is sandwiched between the second substrate and the third substrate. Finally, the second substrate is removed.

Abstract translation: 公开了一种制造柔性面板的方法，其具有以下步骤。 首先，提供具有多个功能开关或导线的第一基板。 然后，第二基板被接合在功能开关或导线上，并且第一基板随后变薄到预定厚度。 之后，将柔性第三基板粘附在第一基板上，其中第一基板夹在第二基板和第三基板之间。 最后，去除第二衬底。

公开(公告)号：US07147531B2

公开(公告)日：2006-12-12

申请号：US10695810

申请日：2003-10-30

Applicant: Jung-Fang Chang ,  Chich-Shang Chang ,  Chi-Lin Chen

Inventor： Jung-Fang Chang ,  Chich-Shang Chang ,  Chi-Lin Chen

IPC: H01J9/26

CPC classification number: G02F1/133305

Abstract: A method for manufacturing a flexible panel is disclosed, which has the following steps. First, a first substrate having a plurality of functional switches or conducting lines thereon is provided. Then, a second substrate is bonded on the functional switches or conducting lines, and the first substrate is thinned to a predetermined thickness subsequently. Afterwards, a flexible third substrate is adhered on the first substrate, wherein the first substrate is sandwiched between the second substrate and the third substrate. Finally, the second substrate is removed.

Abstract translation: 公开了一种制造柔性面板的方法，其具有以下步骤。 首先，提供具有多个功能开关或导线的第一基板。 然后，第二基板被接合在功能开关或导线上，并且第一基板随后变薄到预定厚度。 之后，将柔性第三基板粘附在第一基板上，其中第一基板夹在第二基板和第三基板之间。 最后，去除第二衬底。

公开(公告)号：US06456482B1

公开(公告)日：2002-09-24

申请号：US09947050

申请日：2001-09-05

Applicant: Wong-Cheng Shih ,  Tai Bor Wu ,  Chich Shang Chang

Inventor： Wong-Cheng Shih ,  Tai Bor Wu ,  Chich Shang Chang

IPC: H01G4008

CPC classification number: H01L28/60 ,  H01L28/55

Abstract: Within both a method for forming a capacitor and a capacitor formed employing the method, there is employed for forming at least part of at least one of a first capacitor plate and a second capacitor plate a tungsten rich tungsten oxide material having a tungsten:oxygen atomic ratio of from about 5:1 to about 1:1. By forming the at least part of the at least one of the first capacitor plate and the second capacitor plate of the foregoing tungsten rich tungsten oxide material, the capacitor is formed with attenuated leakage current density.

Abstract translation: 在形成电容器的方法和使用该方法形成的电容器的两者之中，用于形成具有钨：氧原子的富钨氧化钨材料的第一电容器板和第二电容器板中的至少一个的至少一个 比例为约5:1至约1:1。 通过形成上述富钨氧化钨材料的第一电容器板和第二电容器板的至少一个的至少一部分，形成具有衰减的漏电流密度的电容器。

公开(公告)号：US07045441B2

公开(公告)日：2006-05-16

申请号：US10628893

申请日：2003-07-28

Applicant: Chich Shang Chang ,  Chi-Shen Lee ,  Shun-Fa Huang ,  Jung Fang Chang ,  Wen-Chih Hu ,  Liang-Tang Wang ,  Chai-Yuan Sheu

Inventor： Chich Shang Chang ,  Chi-Shen Lee ,  Shun-Fa Huang ,  Jung Fang Chang ,  Wen-Chih Hu ,  Liang-Tang Wang ,  Chai-Yuan Sheu

IPC: H01L21/762 ,  H01L23/15

CPC classification number: B32B37/00 ,  B32B2310/0825 ,  B32B2311/02 ,  B32B2315/08 ,  C03C27/046 ,  H01L2224/83192 ,  Y10S438/977

Abstract: A method for forming a, single-crystal silicon layer on a transparent substrate. A transparent substrate having an amorphous silicon layer formed thereon and a silicon wafer having a hydrogen ion layer formed therein are provided. The silicon wafer is then reversed and laminated onto the amorphous silicon layer so that a layer of single-crystal silicon is between the hydrogen ion layer and the amorphous silicon layer. The laminated silicon wafer and the amorphous silicon layer are then subjected to laser or infrared light to cause chemical bonding of the single crystal silicon layer and the amorphous silicon layer and inducing a hydro-cracking reaction thereby separating the silicon wafer is and the transparent substrate at the hydrogen ion layer, and leaving the single-crystal silicon layer on the transparent substrate.

Abstract translation: 在透明基板上形成单晶硅层的方法。 提供其上形成有非晶硅层的透明基板和其中形成有氢离子层的硅晶片。 然后将硅晶片反转并层压到非晶硅层上，使得单晶硅层位于氢离子层和非晶硅层之间。 然后对层压硅晶片和非晶硅层进行激光或红外光以使单晶硅层和非晶硅层发生化学键合，并引起加氢裂化反应，从而将硅晶片和透明基板分离 氢离子层，并在透明基板上留下单晶硅层。

公开(公告)号：US20050095945A1

公开(公告)日：2005-05-05

申请号：US10695810

申请日：2003-10-30

Applicant: Jung-Fang Chang ,  Chich-Shang Chang ,  Chi-Lin Chen

Inventor： Jung-Fang Chang ,  Chich-Shang Chang ,  Chi-Lin Chen

IPC: B32B37/16 ,  G02F1/1333 ,  G09F9/30 ,  H01J9/24 ,  H01J9/00

CPC classification number: G02F1/133305

Abstract: A method for manufacturing a flexible panel is disclosed, which has the following steps. First, a first substrate having a plurality of functional switches or conducting lines thereon is provided. Then, a second substrate is bonded on the functional switches or conducting lines, and the first substrate is thinned to a predetermined thickness subsequently. Afterwards, a flexible third substrate is adhered on the first substrate, wherein the first substrate is sandwiched between the second substrate and the third substrate. Finally, the second substrate is removed.

Abstract translation: 公开了一种制造柔性面板的方法，其具有以下步骤。 首先，提供具有多个功能开关或导线的第一基板。 然后，第二基板被接合在功能开关或导线上，并且第一基板随后变薄到预定厚度。 之后，将柔性第三基板粘附在第一基板上，其中第一基板夹在第二基板和第三基板之间。 最后，去除第二衬底。

公开(公告)号：US06640403B2

公开(公告)日：2003-11-04

申请号：US09866468

申请日：2001-05-29

Applicant: Wong-Cheng Shih ,  Lan Lin Chao ,  Tai-Bor Wu ,  Chich-Shang Chang

Inventor： Wong-Cheng Shih ,  Lan Lin Chao ,  Tai-Bor Wu ,  Chich-Shang Chang

IPC: H01G700

CPC classification number: H01L28/40 ,  H01L21/3143 ,  H01L21/31604 ,  Y10T29/43 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/49155

Abstract: A method for forming a dielectric-constant-enhanced capacitor is provided. A wafer in a reaction chamber is provided, wherein said wafer comprises a first conductive layer. Then, a first dielectric layer is formed above said first conductive layer to prevent said first conductive layer from growing silicon oxide and to diminish leakage current. Next a precursor is transmitted to a vaporizer. Then said precursor is transformed to a gas and said gas is transmitted to said reaction chamber. Next, a second dielectric layer is deposited above said first dielectric layer. Then a heat treatment is proceeded and a second conductive layer is formed on said second dielectric layer.

Abstract translation: 提供一种形成介电常数增强电容器的方法。 提供反应室中的晶片，其中所述晶片包括第一导电层。 然后，在所述第一导电层之上形成第一电介质层，以防止所述第一导电层生长氧化硅并且减小漏电流。 接下来，将前体传送到蒸发器。 然后将所述前体转化为气体，所述气体被传递到所述反应室。 接下来，在所述第一介电层上沉积第二电介质层。 然后进行热处理，在所述第二电介质层上形成第二导电层。

公开(公告)号：US06559497B2

公开(公告)日：2003-05-06

申请号：US09947786

申请日：2001-09-06

Applicant: Wong-Cheng Shih ,  Tai Bor Wu ,  Chich Shang Chang

Inventor： Wong-Cheng Shih ,  Tai Bor Wu ,  Chich Shang Chang

IPC: H01L31119

CPC classification number: H01L28/75

Abstract: Within a method for fabricating a capacitor structure and a capacitor structure fabricated employing the method, there is provided a conductor barrier layer formed upon an upper capacitor plate formed within the capacitor structure. There is also provided a silicon layer formed upon the conductor barrier layer. The conductor barrier layer and the silicon layer provide for enhanced interdiffusion stability and enhanced delamination stability with respect to the upper capacitor plate, and thus enhanced reliability and performance of the capacitor structure.

Abstract translation: 在使用该方法制造电容器结构和电容器结构的方法中，提供了形成在电容器结构内形成的上电容器板上的导体势垒层。 还提供了形成在导体阻挡层上的硅层。 导体阻挡层和硅层提供相对于上电容器板的增强的相互扩散稳定性和增强的分层稳定性，从而提高电容器结构的可靠性和性能。

公开(公告)号：US20070004308A1

公开(公告)日：2007-01-04

申请号：US11517357

申请日：2006-09-08

Applicant: Jung-Fang Chang ,  Chich-Shang Chang ,  Chi-Lin Chen

Inventor： Jung-Fang Chang ,  Chich-Shang Chang ,  Chi-Lin Chen

IPC: H01J9/24 ,  H01J9/32

CPC classification number: H01J9/241 ,  G02F1/133305 ,  G02F2001/13613 ,  H01J2217/492

Abstract: A method for manufacturing a flexible panel is disclosed, which has the following steps. First, a first substrate having a plurality of functional switches or conducting lines thereon is provided. Then, a second substrate is bonded on the functional switches or conducting lines, and the first substrate is thinned to a predetermined thickness subsequently. Afterwards, a flexible third substrate is adhered on the first substrate, wherein the first substrate is sandwiched between the second substrate and the third substrate. Finally, the second substrate is removed.