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1.发明申请公开(公告)号：US20070248786A1
公开(公告)日：2007-10-25
申请号：US11456090
申请日：2006-07-07
申请人： Chih-Ping Kuo
发明人： Chih-Ping Kuo
IPC分类号： B32B3/02
CPC分类号： H01L21/02021 , H01L23/544 , H01L29/0657 , H01L2223/54493 , H01L2924/0002 , Y10T428/219 , H01L2924/00
摘要： A wafer having an asymmetric edge profile is provided. The wafer has a disk-like body. The disc-like body has a first main surface, a second main surface parallel to the first main surface, and an edge region. The disk-like body has a central line defined between the first main surface and the second main surface, the edge region has an edge profile, and the edge profile is asymmetric with respect to the central line of the first main surface and the second main surface.
摘要翻译： 提供具有不对称边缘轮廓的晶片。 晶片具有盘状体。 盘状体具有第一主表面，平行于第一主表面的第二主表面和边缘区域。 盘状体具有限定在第一主表面和第二主表面之间的中心线，边缘区域具有边缘轮廓，并且边缘轮廓相对于第一主表面和第二主表面的中心线是不对称的 表面。
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公开(公告)号：US20060030120A1
公开(公告)日：2006-02-09
申请号：US10904741
申请日：2004-11-24
申请人： Shih-Feng Shao , Chih-Ping Kuo
发明人： Shih-Feng Shao , Chih-Ping Kuo
IPC分类号： H01L21/30
CPC分类号： H01L21/304 , B81C1/00603 , B81C1/00833 , B81C2201/053 , H01L21/67132
摘要： First, a wafer having a first surface and a second surface is provided. Then, a first heat sensitive tape is utilized to bond the second surface of the wafer to a first carrier, and at least a first semiconductor process is performed upon the first surface of the wafer. Subsequently, a second heat sensitive tape is utilized to bond the first surface of the wafer to a second carrier, and the first heat sensitive tape is separated from the second surface of the wafer by heating. Following that, at least a second semiconductor process is performed upon the second surface of the wafer, and the second heat sensitive tape is separated from the first surface of the wafer by heating.
摘要翻译： 首先，提供具有第一表面和第二表面的晶片。 然后，利用第一热敏胶带将晶片的第二表面接合到第一载体上，并且至少第一半导体工艺在晶片的第一表面上进行。 随后，使用第二热敏胶带将晶片的第一表面粘合到第二载体上，并且通过加热将第一热敏胶带与晶片的第二表面分离。 接着，在晶片的第二表面上执行至少第二半导体工艺，并且通过加热将第二热敏带与晶片的第一表面分离。
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公开(公告)号：US20090023364A1
公开(公告)日：2009-01-22
申请号：US12212653
申请日：2008-09-18
申请人： Chih-Ping Kuo
发明人： Chih-Ping Kuo
CPC分类号： H01L21/02021 , H01L23/544 , H01L29/0657 , H01L2223/54493 , H01L2924/0002 , Y10T428/219 , H01L2924/00
摘要： A wafer having an asymmetric edge profile is provided. The wafer has a disk-like body. The disc-like body has a first main surface, a second main surface parallel to the first main surface, and an edge region. The disk-like body has a central line defined between the first main surface and the second main surface, the edge region has an edge profile, and the edge profile is asymmetric with respect to the central line of the first main surface and the second main surface.
摘要翻译： 提供具有不对称边缘轮廓的晶片。 晶片具有盘状体。 盘状体具有第一主表面，平行于第一主表面的第二主表面和边缘区域。 盘状体具有限定在第一主表面和第二主表面之间的中心线，边缘区域具有边缘轮廓，并且边缘轮廓相对于第一主表面和第二主表面的中心线是不对称的 表面。
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公开(公告)号：US5204284A
公开(公告)日：1993-04-20
申请号：US744569
申请日：1991-08-13
CPC分类号： H01L33/04 , B82Y20/00 , H01L33/02 , H01L33/30 , H01S5/3201 , H01S5/3213 , H01S5/3215 , H01S5/32325 , H01S5/34326 , Y10S438/936
摘要： A high band-gap opto-electronic device is formed by epitaxially growing the device section in a lattice-matched (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P-GaAs system. The band-gap of the epitaxial layer increases with x. Instead of growing the device section directly on the GaAs substrate, a layer of (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P, graded in x and in temperature while maintaining substantially y=0.5, is grown as a transitional layer. The high band-gap device structures include homojunctions, heterojunctions and particularly a separate confinement quantum well heterostructures. Various embodiments of the invention include devices on absorbing substrates and on transparent substrates, and devices incorporating strained-layer superlattices.
摘要翻译： 通过在晶格匹配（Al x Ga 1-x）y In 1-y -P-GaAs系统中外延生长器件部分来形成高带隙光电器件。 外延层的带隙随x增加。 不是直接在GaAs衬底上生长器件部分，而是在保持基本上为y = 0.5的同时以x和温度分级的（Al x Ga 1-x）y In 1-y P层被生长为过渡层。 高带隙器件结构包括同功能，异质结，特别是单独的约束量子阱异质结构。 本发明的各种实施例包括吸收衬底和透明衬底上的器件以及包含应变层超晶格的器件。
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公开(公告)号：US5060028A
公开(公告)日：1991-10-22
申请号：US300003
申请日：1989-01-19
IPC分类号： H01L21/205 , H01L31/10 , H01L33/02 , H01L33/30 , H01S5/00 , H01S5/02 , H01S5/32 , H01S5/323 , H01S5/34 , H01S5/343
CPC分类号： H01L33/02 , B82Y20/00 , H01L33/30 , H01S5/3201 , H01S5/3216 , H01S5/32325 , H01S5/34326
摘要： A high band-gap opto-electronic device is formed by epitaxially growing the device section in a lattice-matched (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P-GaAs system. The band-gap of the epitaxial layer increases with x. Instead of growing the device section directly on the GaAs substrate, a layer of (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-7 P, graded in x and in temperature while maintaining substantially y=0.5, is grown as a transitional layer. The high band-gap device structures include homojunctions, heterojunctions and particularly a separate confinement quantum well heterostructures. Various embodiments of the invention include devices on absorbing substrates and on transparent substrates, and devices incorporating strained-layer superlattices.
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公开(公告)号：US20070259509A1
公开(公告)日：2007-11-08
申请号：US11425130
申请日：2006-06-19
申请人： Chih-Ping Kuo
发明人： Chih-Ping Kuo
IPC分类号： H01L21/30
CPC分类号： H01L21/78
摘要： A method of thinning a wafer. A wafer is provided, and the front surface of the wafer is bonded to a carrier wafer with a bonding layer. The bonding layer is a thermal release tape or a UV tape. Subsequently, a wafer thinning process is performed to thin the wafer from the back surface.
摘要翻译： 一种使晶片变薄的方法。 提供晶片，并且晶片的前表面用粘结层粘合到载体晶片上。 接合层是热释放带或UV胶带。 随后，进行晶片薄化处理以从背面薄化晶片。
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公开(公告)号：US20070079953A1
公开(公告)日：2007-04-12
申请号：US11526468
申请日：2006-09-25
申请人： Hung-Jiun Liao , Chih-Ping Kuo , Cheng Chen
发明人： Hung-Jiun Liao , Chih-Ping Kuo , Cheng Chen
IPC分类号： F24J3/08
CPC分类号： F28D15/00 , F24T10/20 , F28D7/1607 , Y02E10/14
摘要： A recurring natural water cooling device is provided. The recurring natural water cooling device includes a flow channel through which a natural water flow from a natural water source is circulated, a thermal exchanging device through which a thermal fluid flows and being placed in the flow channel so as to transfer a heat of the thermal fluid to the natural water flow, a power device speeding up the circulated natural water, and a plurality of diversion devices communicatively connecting the natural water source and the flow channel.
摘要翻译： 提供经常性的天然水冷却装置。 重复的天然水冷却装置包括流过天然水源的天然水流通过的流动通道，热交换装置，热流体通过该热交换装置流动并被放置在流动通道中，以便传递热量 流体到天然水流，功率装置加速循环的自然水，以及多个分流装置，其通信地连接天然水源和流动通道。
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