公开(公告)号：US08703595B2

公开(公告)日：2014-04-22

申请号：US13299152

申请日：2011-11-17

申请人： Hak-Lay Chuang ,  Cheng-Cheng Kuo ,  Ching-Che Tsai ,  Ming Zhu ,  Bao-Ru Young

发明人： Hak-Lay Chuang ,  Cheng-Cheng Kuo ,  Ching-Che Tsai ,  Ming Zhu ,  Bao-Ru Young

IPC分类号： H01L21/336

CPC分类号： H01L27/0207 ,  H01L21/0274 ,  H01L21/28123 ,  H01L21/32139 ,  H01L21/823456 ,  H01L27/092 ,  H01L29/41775 ,  H01L29/42356 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

摘要： The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a plurality of dummy gates over a substrate. The dummy gates extend along a first axis. The method includes forming a masking layer over the dummy gates. The masking layer defines an elongate opening extending along a second axis different from the first axis. The opening exposes first portions of the dummy gates and protects second portions of the dummy gates. A tip portion of the opening has a width greater than a width of a non-tip portion of the opening. The masking layer is formed using an optical proximity correction (OPC) process. The method includes replacing the first portions of the dummy gates with a plurality of first metal gates. The method includes replacing the second portions of the dummy gates with a plurality of second metal gates different from the first metal gates.

摘要翻译： 本公开提供了制造半导体器件的方法。 该方法包括在衬底上形成多个虚拟栅极。 虚拟门沿着第一轴延伸。 该方法包括在伪栅极上形成掩模层。 掩蔽层限定沿着不同于第一轴线的第二轴线延伸的细长开口。 开口暴露虚拟门的第一部分并保护虚拟门的第二部分。 开口的尖端部分的宽度大于开口的非尖端部分的宽度。 使用光学邻近校正（OPC）工艺形成掩模层。 该方法包括用多个第一金属栅极替换伪栅极的第一部分。 该方法包括用与第一金属栅极不同的多个第二金属栅极替换伪栅极的第二部分。

公开(公告)号：US08656319B2

公开(公告)日：2014-02-18

申请号：US13368919

申请日：2012-02-08

申请人： Cheng-Cheng Kuo ,  Ching-Che Tsai ,  Tzu-Chun Lo ,  Chih-Wei Hsu ,  Hua-Tai Lin ,  Tsai-Sheng Gau ,  Wen-Chun Huang ,  Chih-Shiang Chou ,  Hsin-Chang Lee ,  Kuei Shun Chen

发明人： Cheng-Cheng Kuo ,  Ching-Che Tsai ,  Tzu-Chun Lo ,  Chih-Wei Hsu ,  Hua-Tai Lin ,  Tsai-Sheng Gau ,  Wen-Chun Huang ,  Chih-Shiang Chou ,  Hsin-Chang Lee ,  Kuei Shun Chen

IPC分类号： G06F17/50

CPC分类号： G03F7/70441 ,  G03F7/70125

摘要： A method of optical proximity correction (OPC) convergence control that includes providing a lithography system having a photomask and an illuminator. The method further includes performing an exposure by the illuminator on the photomask. Also, the method includes optimizing an optical illuminator setting for the lithography system with a defined gate pitch in a first direction in a first template. Additionally, the method includes determining OPC correctors to converge the OPC results with a target edge placement error (EPE) to produce a first OPC setting for the first template. The first OPC setting targets a relatively small EPE and mask error enhancement factor (MEEF)of the defined gate pitch in the first template. In addition, the method includes checking the first OPC setting for a relatively small EPE, MEEF and DOM consistency with the first template of the defined gate pitch in a second, adjacent template.

摘要翻译： 一种光学邻近校正（OPC）会聚控制的方法，包括提供具有光掩模和照明器的光刻系统。 该方法还包括执行照明器在光掩模上的曝光。 此外，该方法包括在第一模板中以第一方向限定的门间距优化光刻系统的光照射器设置。 此外，该方法包括确定OPC校正器以使目标边缘放置误差（EPE）收敛OPC结果，以产生第一模板的第一OPC设置。 第一个OPC设置针对第一个模板中定义的门间距的相对较小的EPE和掩模误差增强因子（MEEF）。 此外，该方法包括在第二相邻模板中检查第一OPC设置以获得相对较小的EPE，MEEF和DOM与限定的门间距的第一模板的一致性。

公开(公告)号：US20130205265A1

公开(公告)日：2013-08-08

申请号：US13368919

申请日：2012-02-08

申请人： Cheng-Cheng Kuo ,  Ching-Che Tsai ,  Tzu-Chun Lo ,  Chih-Wei Hsu ,  Hua-Tai Lin ,  Tsai-Sheng Gau ,  Wen-Chun Huang ,  Chih-Shiang Chou ,  Hsin-Chang Lee ,  Kuei Shun Chen

发明人： Cheng-Cheng Kuo ,  Ching-Che Tsai ,  Tzu-Chun Lo ,  Chih-Wei Hsu ,  Hua-Tai Lin ,  Tsai-Sheng Gau ,  Wen-Chun Huang ,  Chih-Shiang Chou ,  Hsin-Chang Lee ,  Kuei Shun Chen

IPC分类号： G06F17/50

CPC分类号： G03F7/70441 ,  G03F7/70125

摘要： A method of optical proximity correction (OPC) convergence control that includes providing a lithography system having a photomask and an illuminator. The method further includes performing an exposure by the illuminator on the photomask. Also, the method includes optimizing an optical illuminator setting for the lithography system with a defined gate pitch in a first direction in a first template. Additionally, the method includes determining OPC correctors to converge the OPC results with a target edge placement error (EPE) to produce a first OPC setting for the first template. The first OPC setting targets a relatively small EPE and mask error enhancement factor (MEEF)of the defined gate pitch in the first template. In addition, the method includes checking the first OPC setting for a relatively small EPE, MEEF and DOM consistency with the first template of the defined gate pitch in a second, adjacent template.

摘要翻译： 一种光学邻近校正（OPC）会聚控制的方法，包括提供具有光掩模和照明器的光刻系统。 该方法还包括执行照明器在光掩模上的曝光。 此外，该方法包括在第一模板中以第一方向限定的门间距优化光刻系统的光照射器设置。 此外，该方法包括确定OPC校正器以使目标边缘放置误差（EPE）收敛OPC结果，以产生第一模板的第一OPC设置。 第一个OPC设置针对第一个模板中定义的门间距的相对较小的EPE和掩模误差增强因子（MEEF）。 此外，该方法包括在第二相邻模板中检查与相对小的EPE，MEEF和DOM一致性的第一OPC设置与限定的门间距的第一模板。

公开(公告)号：US20130126977A1

公开(公告)日：2013-05-23

申请号：US13299152

申请日：2011-11-17

申请人： Hak-Lay Chuang ,  Cheng-Cheng Kuo ,  Ching-Che Tsai ,  Ming Zhu ,  Bao-Ru Young

发明人： Hak-Lay Chuang ,  Cheng-Cheng Kuo ,  Ching-Che Tsai ,  Ming Zhu ,  Bao-Ru Young

IPC分类号： H01L27/092 ,  H01L21/28

CPC分类号： H01L27/0207 ,  H01L21/0274 ,  H01L21/28123 ,  H01L21/32139 ,  H01L21/823456 ,  H01L27/092 ,  H01L29/41775 ,  H01L29/42356 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

摘要： The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a plurality of dummy gates over a substrate. The dummy gates extend along a first axis. The method includes forming a masking layer over the dummy gates. The masking layer defines an elongate opening extending along a second axis different from the first axis. The opening exposes first portions of the dummy gates and protects second portions of the dummy gates. A tip portion of the opening has a width greater than a width of a non-tip portion of the opening. The masking layer is formed using an optical proximity correction (OPC) process. The method includes replacing the first portions of the dummy gates with a plurality of first metal gates. The method includes replacing the second portions of the dummy gates with a plurality of second metal gates different from the first metal gates.

摘要翻译： 本公开提供了制造半导体器件的方法。 该方法包括在衬底上形成多个虚拟栅极。 虚拟门沿着第一轴延伸。 该方法包括在伪栅极上形成掩模层。 掩蔽层限定沿着不同于第一轴线的第二轴线延伸的细长开口。 开口暴露虚拟门的第一部分并保护虚拟门的第二部分。 开口的尖端部分的宽度大于开口的非尖端部分的宽度。 使用光学邻近校正（OPC）工艺形成掩模层。 该方法包括用多个第一金属栅极替换伪栅极的第一部分。 该方法包括用与第一金属栅极不同的多个第二金属栅极替换伪栅极的第二部分。

公开(公告)号：US20130046154A1

公开(公告)日：2013-02-21

申请号：US13306866

申请日：2011-11-29

申请人： Yue Der Lin ,  Shih Fan Wang ,  Hu Ying Ho ,  Ching Che Tsai ,  Kang Ping Lin ,  Hen Hong Chang ,  Yung Ching Chang

发明人： Yue Der Lin ,  Shih Fan Wang ,  Hu Ying Ho ,  Ching Che Tsai ,  Kang Ping Lin ,  Hen Hong Chang ,  Yung Ching Chang

IPC分类号： A61B5/1455

CPC分类号： A61B5/14551 ,  A61B5/02007

摘要： The present invention discloses a PPG imaging device and a PPG measuring method. The PPG imaging device comprises a light emitting unit, a collimator unit, a beam splitter unit, an image sensing unit, and an image analysis unit. The light emitting unit provides an incident light signal. The collimator unit receives the incident light signal and transforms the incident light signal into a parallel light signal. The beam splitter unit receives the parallel light signal and reflects it to a tested region. The image sensing unit receives a reflected light signal reflected from the tested region and converts it into image signals. The image analysis unit connects with the image sensing unit and analyzes the image signals to obtain PPG signals of the tested region. The PPG imaging device may be arranged in an anti-light pollution unit, whereby to prevent from optical interference and obtain higher measurement precision.

摘要翻译： 本发明公开了一种PPG成像装置和PPG测定方法。 PPG成像装置包括发光单元，准直器单元，分束器单元，图像感测单元和图像分析单元。 发光单元提供入射光信号。 准直器单元接收入射光信号并将入射光信号转换成并行光信号。 分束器单元接收平行光信号并将其反射到测试区域。 图像感测单元接收从测试区域反射的反射光信号并将其转换为图像信号。 图像分析单元与图像感测单元连接并分析图像信号以获得测试区域的PPG信号。 PPG成像装置可以布置在防光污染单元中，从而防止光学干扰并获得更高的测量精度。

公开(公告)号：US20130046192A1

公开(公告)日：2013-02-21

申请号：US13307883

申请日：2011-11-30

申请人： Yue-Der LIN ,  Ching Che TSAI ,  Hu Ying HO ,  Shih Fan WANG ,  Kang Ping LIN ,  Hen Hong CHANG ,  Yung Ching CHANG

发明人： Yue-Der LIN ,  Ching Che TSAI ,  Hu Ying HO ,  Shih Fan WANG ,  Kang Ping LIN ,  Hen Hong CHANG ,  Yung Ching CHANG

IPC分类号： A61B5/02

CPC分类号： A61B5/02007 ,  A61B5/02416 ,  A61B5/0285

摘要： An image-based PWV measurement device and method are provided. The measurement device comprises at least two light emitting units respectively projecting light beams to at least two detected regions on body surface; at least two light transmitting units respectively receiving and transmitting light signals measured at the different detected regions; an image sensing unit converting the light signals measured at the detected regions into image signals; a length measurement unit used to measure the distance between the detected regions; and an image analysis unit analyzing the image signals to obtain PPG signals for the detected regions. According to the PPG signals, the image analysis unit calculates the physiological parameters, including the perfusion index, respiration rate, pulse rate, stiffness index, reflection index, and PWV between the detected regions, which is derived according to the distance and the pulse transit time from the PPG signals of the two detected regions.

摘要翻译： 提供了基于图像的PWV测量装置和方法。 测量装置包括至少两个发光单元，其分别将光束投射到身体表面上的至少两个检测区域; 至少两个光发送单元分别接收和发送在不同的检测区域测量的光信号; 图像感测单元，将在检测到的区域测量的光信号转换为图像信号; 用于测量检测到的区域之间的距离的长度测量单元; 以及图像分析单元，分析图像信号以获得用于检测到的区域的PPG信号。 根据PPG信号，图像分析单元计算检测区域之间的生理参数，包括灌注指数，呼吸率，脉搏率，刚度指数，反射指数和PWV，根据距离和脉冲传递 时间来自两个检测区域的PPG信号。