公开(公告)号：US06673252B2

公开(公告)日：2004-01-06

申请号：US09750135

申请日：2000-12-29

申请人： Choon Sup Lee ,  Chul Hi Han

发明人： Choon Sup Lee ,  Chul Hi Han

IPC分类号： B81C100

CPC分类号： G02B3/0056 ,  G02B3/0012

摘要： A method of fabricating a refractive silicon microlens by using micro-machining technology. The method of fabricating a refractive silicon microlens according to the present invention comprises the steps of forming a boron-doped region on a silicon substrate, and selectively removing regions of the substrate except for the boron-doped region to form a lens comprised of only the boron-doped region. With the method of the present invention, it is possible to fabricate a two-dimensional infrared silicon microlens array. By using such a two-dimensional infrared silicon microlens array in an infrared sensor, the detectivity of the infrared sensor can be increased by 3.4 times, which is the refraction index of silicon. In addition, the two-dimensional infrared silicon microlens array of the present invention can be used with commercial infrared telecommunication devices.

摘要翻译： 使用微加工技术制造折射硅微透镜的方法。 根据本发明的制造折射硅微透镜的方法包括以下步骤：在硅衬底上形成硼掺杂区域，并且选择性去除除了掺杂硼的区域之外的衬底的区域以形成仅由 硼掺杂区域。 利用本发明的方法，可以制造二维红外硅微透镜阵列。 通过在红外线传感器中使用这种二维红外硅微透镜阵列，红外传感器的检测能力可以提高3.4倍，这是硅的折射率。 此外，本发明的二维红外硅微透镜阵列可以与商业红外线通信设备一起使用。

公开(公告)号：US06702637B2

公开(公告)日：2004-03-09

申请号：US10048148

申请日：2002-01-25

申请人： Choon-Sup Lee ,  Jae-Duk Lee ,  Chul-Hi Han

发明人： Choon-Sup Lee ,  Jae-Duk Lee ,  Chul-Hi Han

IPC分类号： H01J912

CPC分类号： H01J1/304 ,  H01J1/3042 ,  H01J9/022

摘要： The present invention relates to a method of forming a small gap using CMP and a method for manufacturing a lateral FED. In the present invention, a small gap is determined by the thickness of an oxide film, and so uniform small gaps of about 100 Å that have been impossible to attain with the art of prior lithography can be formed with repeatability. Prior lateral field emission devices have the problem of repeatability in forming a gap for field emission because they are fabricated by means of a thermal stress method or an electrical stress method. But if the method of forming a small gap according to the present invention is used to fabricate a lateral FED, a FED can be made that has low voltage drive and high current drive characteristics and uniform field emission characteristics.

摘要翻译： 本发明涉及使用CMP形成小间隙的方法以及制造横向FED的方法。 在本发明中，通过氧化膜的厚度来确定小的间隙，并且可以以重现性形成与现有的光刻技术无法达到的均匀的大约的小间隙。 现有的横向场致发射装置在形成场发射间隙时具有重复性的问题，因为它们是通过热应力法或电应力法制造的。 但是，如果使用根据本发明的形成小间隙的方法来制造横向FED，则可以制造具有低电压驱动和高电流驱动特性以及均匀场致发射特性的FED。