公开(公告)号：US06702637B2

公开(公告)日：2004-03-09

申请号：US10048148

申请日：2002-01-25

申请人： Choon-Sup Lee ,  Jae-Duk Lee ,  Chul-Hi Han

发明人： Choon-Sup Lee ,  Jae-Duk Lee ,  Chul-Hi Han

IPC分类号： H01J912

CPC分类号： H01J1/304 ,  H01J1/3042 ,  H01J9/022

摘要： The present invention relates to a method of forming a small gap using CMP and a method for manufacturing a lateral FED. In the present invention, a small gap is determined by the thickness of an oxide film, and so uniform small gaps of about 100 Å that have been impossible to attain with the art of prior lithography can be formed with repeatability. Prior lateral field emission devices have the problem of repeatability in forming a gap for field emission because they are fabricated by means of a thermal stress method or an electrical stress method. But if the method of forming a small gap according to the present invention is used to fabricate a lateral FED, a FED can be made that has low voltage drive and high current drive characteristics and uniform field emission characteristics.

摘要翻译： 本发明涉及使用CMP形成小间隙的方法以及制造横向FED的方法。 在本发明中，通过氧化膜的厚度来确定小的间隙，并且可以以重现性形成与现有的光刻技术无法达到的均匀的大约的小间隙。 现有的横向场致发射装置在形成场发射间隙时具有重复性的问题，因为它们是通过热应力法或电应力法制造的。 但是，如果使用根据本发明的形成小间隙的方法来制造横向FED，则可以制造具有低电压驱动和高电流驱动特性以及均匀场致发射特性的FED。